ERB81 Search Results

era-84

Abstract: 104C smd ERE81-004
Contextual Info: —K / Rectifier Diodes m -it i/yjil Schottky-Barrier Diodes SBD 1 in one-package 1 Ä Device type SMD i'tiSno Maximum rating Viww *1 If i a v ) ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 ERB83-004 ERB83-006 ERB81-004

ERB81-004

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com ERB81-004 SCHOTTKY-BARRIER RECTIFIER DIODE PRV : 40 Volts Io : 2.0 Amperes D2 FEATURES : * * * * * * * * IATF 0113686 SGS TH07/1033 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) High current capability High surge current capability

ESAD81

Abstract: ESAC6 erb12 ESAD81-004 era-84 SCHOTTKY -004
Contextual Info: SCHOTTKY & GENERAL PURPOSE DIODES Schottky “Quick Reference” Selection Guide PACKAGE 45 VOLT Part Number lo A Pkg. M OUNT SC802-04 1 20 AXIAL ERA82-004 ERA83-004 E R A 8 1-004 ERB81 -004 ERB83-004 ERC81 -004 ERC81S-004 0.6 1 1 2 2 3 5 TO -220 ERC80-004

Contextual Info: ERB81-004 SCHOTTKY-BARRIER RECTIFIER DIODE PRV : 40 Volts Io : 2.0 Amperes D2A FEATURES : * * * * * * * 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop

erb81-004 diode

Abstract: ERB81-004 ERB81 CV marking code diode transient MARKING A7
Contextual Info: ERB81 -004 1.7A ! * » • + » : O utline D raw ings '> 3 y h * - / < U 7 » W * - K SCHOTTKY BARRIER DIODE ■ t t J t : Features :7j\ Low VF • * -f-y * : M arking XfcT-K Super high speed sw itch in g . • - f\s — t A 7 —3 —K : & Color code '• Silver

b81 004

Abstract: diode b81 b81 004 diode
Contextual Info: ERB81-004 2.0A (40V / 2.0A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø4.0 ø0.8 7.5 25 MIN. 25 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Lot No. Applications B81 -004 02 •··

Contextual Info: ERB81-004I 1 -7A í ^3 ' y h+— K SCHOTTKY BARRIER IDE W ftW tik : Outline Drawings : Features • tevF mnz '•Marking Low V F S u p e r h ig h speed s w itc h in g . # 5 - 3 - r : is Color code '• Silver • 7 V — *— a * G JrSflEiSiS'li «&£*£

ERB81-004

Contextual Info: ERB81-004 SCHOTTKY-BARRIER RECTIFIER DIODE PRV : 40 Volts Io : 2.0 Amperes D2 FEATURES : * * * * * * * * 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop

b81 004

Abstract: diode b81 Diode erb81-004 b81 004 diode b81 diode erb81-004 diode ERB81-004 erb81
Contextual Info: ERB81-004 1.7A (40V / 1.7A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø4.0 ø0.8 7.5 25 MIN. 25 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Lot No. Applications B81 -004 02 •··

ERB81-004

Abstract: ERB81 A347 TI90
Contextual Info: ERB81 -004 1.7A ! * » • + » : O utline D raw ings '> 3 y h * - / < U 7 » W * - K SCHOTTKY BARRIER DIODE ■ t t J t : Features :7j\ Low VF • * -f-y * : M arking XfcT-K Super high speed sw itch in g . • - f\s — t A 7 —3 —K : & Color code '• Silver

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

SE024

Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Contextual Info: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A

1N5817-1N5819

Abstract: MBR4020PT-4060PT SR10-SR50 3060PT ERA81 004 ERC81 002 SB120 SB160 ERA81-002 ERB81-002 pbyr3035pt
Contextual Info: 5.肖特基整流二极管 序号 型号 IF VRRM VF A V V 外形 （1）肖特基塑封整流二极管 1 1N5817-1N5819 1A 20-40V 0.45-0.6 2 1N5820-1N5822 3A 20-40V 0.45-0.6 DO-201AD 3

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

diode

Abstract: SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE

Contextual Info: Ratings and characteristics M a x im u m rating Type V rrm lo *1 If SM # 2 V o lts A m p s. A m p s. T h e rm a l ratin g C h a ra c te ris tic s T a = 2 5 °C T j a n d Tstg V fm Ir r m M ass D im e n s io n s Fig. No. #3 °C M ax. V o lts M ax. m A G ra m s

ERC24-06

Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Contextual Info: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08

Contextual Info: Schottky-Barrier Diodes Single package Ratings and characteristics V rrm lo Volts Amps. Dim ensions Max. m A G ram s Fig. No. Characteristics Ta=25°C T j and Tstg V fm Irrm # 3 Amps. °C M ax. Volts 0 .6 Ta=60°C) 25 -40 t o +125 0.55 (I f= 0.6A ) 1.0 0.18

SD-46 Diode

Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE

fmh*23N50E

Abstract: FMH23N50E N-channel MOSFET to-247 fmv23n50e ic 2535 fmh23n50 FGW40N120HD FMV20N60S1 FMW30N60S1HF FMW20N60S1HF
Contextual Info: 1959-2012:QuarkCatalogTempNew 9/11/12 9:05 AM Page 1959 25 Diodes, IGBTs and MOSFETs Features: ᭤ Low VF ᭤ Super High Speed Switching ᭤ High Reliability By Planer Design ø2.5 Application: ᭤ High Speed Switching ᭤ Ultra Small Package, Possible for

IRF 3250

Abstract: IRf 334 irf 1402 irf 2117 cry 152 H22B1 EFG13C ec75 HFA16PB120 FA57SA50LC
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

sc902-02

Abstract: era-84 ERC815-004 YG902C2R
Contextual Info: C o l l m e r Semiconductor Rectifiers Packages Dimensions mm inch Figure 1 2 3 4 A B C D mm In. mm In. mm In. mm In. 3.0 5.0 7.5 7.5 0.120 0.200 0.295 0.295 25 min. 25 min. 25 min. 30 min. 0.98 0.98 0.98 1.18 ¯2.5 ¯3.0 ¯4.0 ¯6.4 ¯0.10 ¯0.12 ¯0.157

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors