DIODE T 5D Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

FS50H

Abstract: DIODE u5 5dl2c
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED C /n C \l O P /IQ A Ü \U , T / L £ U * t O M U5(D, F)L2C48A O SW ITCHING TYPE POW ER SUPPLY APPLICATION. O CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage : V r r m = 200, 300V

MARK 5D SOT

Abstract: L1SS355T1G L1SS355T3G
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode . . L1SS355T1G Applications High speed switching 1 Features 1 Small surface mounting type. 2) High Speed. t rr =1.2ns Typ.) 2 3) High reliability with high surge current handling capability. 4) We declare that the material of product

SB160 schottky

Contextual Info: Ordering number : EN2500 S B 1 6 0 - 0 9 R No.2500 Schottky Barrier Diode Twin Type Cathode Common 90V, 16A Re c t i f i e r Applications . High frequency rectification (switching regulators, converters, choppers) Features . Low forward voltage (VFmax=0.85V)

TLP620

Abstract: TLP620-2 TLP620-4
Contextual Info: TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS A C /D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode

Contextual Info: Revised February 1999 s e m ic o n d u c t o r MM74HCU04 Hex Inverter are protected from dam age due to static discharge by inter­ nal diode clam ps to V qq and ground. General Description The M M 74H C U 04 inverters utilize advanced silicon-gate CM O S tech n olo gy to achieve operating speeds sim ilar to

Contextual Info: $EVROXWH 0D[LPXP 5DWLQJV 6\PERO 9& 6 9&*5 ,& ,&0 9*(6 3WRW 7M 7VWJ 9LVRO KXPLGLW\ FOLPDWH &RQGLWLRQV 5*(  NΩ 7FDVH  °& 7FDVH  °& WS SHU ,*%7 7FDVH  PV  °& $&  PLQ ,(&  ,(&  7 ,QYHUVH 'LRGH , ± ,& 7FDVH  °& ,)0 ± ,&0 7FDVH  °& WS  PV

Contextual Info: TOSHIBA 5DL2C41A TO SHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C41A Unit in mm SW ITCHING TYPE POWER SUPPLY APPLICATIO N CONVERTER & CHOPPER APPLICATIO N J * 3 .6 ± 0 .2 _ 10.3MAX 1.32 5* X ill • Repetitive Peak Reverse Voltage : VRRM = 200V

5DL2CZ

Abstract: 5DL2CZ47 5DL2CZ47A 5FL2CZ47A 5GL2CZ47A
Contextual Info: TO SHIBA 5DL2CZ47A,5FL2CZ47A,5GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage V r r m = 200, 300, 400V

Contextual Info: PRODUCT C A T A L O G _ . ^ S l i t r o i l ogy,^ ,nc \K7 :{%f N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0.2 1Q 5DF360 SDF360 SDF360 5DF360 PARAMETER JEA JEB JEC JED • RUGGED PACKAGE •H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS

Contextual Info: SN54LVTH373, SN74LVTH373 3.3-V ABT OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCBS689E – MAY 1997 – REVISED APRIL 1999 D D D D D D OE 1Q 1D 2D 2Q 3Q 3D 4D 4Q GND 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC 8Q 8D 7D 7Q 6Q 6D 5D 5Q

Contextual Info: DB3X315E Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 5D

Contextual Info: Formosa MS SMD Small Signal Switching Diode 1SS355 List List. 1 Package outline. 2

SOD-323F

Contextual Info: Formosa MS SMD Switching Diode BAV16WS List List. 1 Package outline. 2 Features. 2

Contextual Info: Formosa MS SMD Switching Diode 1N4148WS List List. 1 Package outline. 2 Features. 2

Contextual Info: IRFS440A Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

SEC IRF 640

Contextual Info: IRF840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

sec irf840

Abstract: IRF840 MOSFET SEC IRF 640
Contextual Info: IRF840 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Zener diode smd marking WU

Abstract: Zener diode wz 140
Contextual Info: Formosa MS SMD Zener Diode BZT52 Series List List. 1 Package outline. 2 Features. 2

Contextual Info: Formosa MS GLASS MINI-MELF Zener Diode ZMM55C B 2V0 THRU ZMM55C(B)100 List List. 1 Package outline. 2

NCP1010P60

Abstract: KL194 p16n50 NCP1252 KL194-25.4 SW AND8373 0946-A KL194 25.4 SW k318m D1N4937
Contextual Info: AND8373/D 2 Switch-Forward Current Mode Converter Prepared by: Thierry Sutto ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction This application note describes the design of 120−W, 125 kHz, two−switch forward current mode converter with the NCP1252 controller. It can viewed the practical

DO-35G

Contextual Info: Formosa MS BZX55C2V4 THRU BZX55C100 Zener Diode List List. 1 Package outline. 2 Features. 2

1N5225

Contextual Info: Formosa MS Zener Diode 1N5221B THRU 1N5267B List List. 1 Package outline. 2 Features. 2

Contextual Info: L i n t i A B _ TECHNOLOGY C onstant-C urrent/ C o nstant- Vo ltag e 3A B a tte ry C h a rg e r w ith In p u t C u rre n t Lim iting F€ATUR€S DCSCMCTIOn • Simple Design to Charge NiCd, NiMH and Lithium Rechargeable Batteries— Charging Current