DIODE T 5D Search Results

zener smd diode wl

Abstract: DIODE SMD w9 Zener diode smd marking code WN Zener diode smd marking code wa Zener diode smd marking WM smd zener diode code WH W8 DIODE smd Wj zener SMD W9 zener smd diode 5.1v 500mw marking code WL SMD zener
Contextual Info: Formosa MS SMD Zener Diode BZT52-T Series List List. 1 Package outline. 2 Features. 2

SOT-23 Rod

Abstract: diode marking e8 Diode Marking 016 SOT23 DIODE marking CODE AV
Contextual Info: MMBD914 Small-Signal Switching Diode t c u rod P New Features TO-236AB SOT-23 • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33)

b0914

Abstract: marking rut MMBD914 diode MARKING A10 diode uj1 atlr
Contextual Info: 1 MMBD914 S u r f a c e M o u n t S w i tc h i n g Diode SWITCHING DIODE 200mA MPERS lOOVOLTS Features: •‘High Speed £ 4 n s KLow Rever Leakage Current ‘ Small Outline Surface M ount SOT-23 Package S O T -23 O u t l i n e Dimen sion s -+ u . h U nit:m m

phonograph preamplifiers

Abstract: differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026
Contextual Info: |jA3018 •MA3018A. [i A3019 •mA3026 •mA3036 MA3039 • JA3045 •mA3046 •mA3054 •mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D L IN E A R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode A rrays consist o f general purpose integrated circuit devices constructed

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

A 5D

Contextual Info: T O S H IB A 5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage

ISS 355

Abstract: 1SS355 diode 1ss low leakage signal diode sod323 1SS3 marking LEM
Contextual Info: 1 1SS 355 Surface M ount Switching Diode SWITCHING DIODE lOOmAMPERS 100VOLTS F eatures: ’ High Speed £ 4ns 'Low Rever Leakage Current ’ Small Outline Surface Mount SOD-323 Package SOD -323 Outline Dimensions Unitrmm K A jDL T M ILLM ETER S r Qi Dim Min

DIODE s2l

Contextual Info: Super Fast Recovery Diode Axial Diode m tm S2L40U OUTLINE U n it i m m Package : AX10 W e ig h t 0 .6 5 g T y p 4 0 0 V 1.1 A Feature -L-JO. 26.5 26.5 <b\A • L o w N oise • trr=35ns (1> • trr= 3 5 n s Main Use 2 M arking • S w itc h in g R egu lator

5d3 diode

Abstract: sanyo laser
Contextual Info: ENGINEERING SPECIFICATIONS *' TOTTORI SANYO ELECTRONIC 5 - S I * . E LE CTRI C CO. LTD DEVICE DIVISION I i d l k i * T ii t t » i i" S k i. 880 i - C i i lip ib Date^ January 9, 1989 LASER DIODE TTyjpe : SDL-6032-10 1 * verified and distributed by Electronic Device D ivision, T o tto ri Sanyo

IN5639A

Abstract: diode LT 675 IN 407 IN6053 Zener diode IN5637A in5645a IN6036A IN5650A IN6055A IN6042A in6053a
Contextual Info: POWERZORB L13 Series 1.5KW Transient Absorption Zener Diode A range of unipolar Protection diodes in a hermetically sealed metal and glass D013 package. ; 1mS expo P max c o n t-

FS50H

Abstract: DIODE u5 5dl2c
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED C /n C \l O P /IQ A Ü \U , T / L £ U * t O M U5(D, F)L2C48A O SW ITCHING TYPE POW ER SUPPLY APPLICATION. O CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage : V r r m = 200, 300V

TILI53

Abstract: TIL111 TIL153 TIL154 TIL155 TIL156
Contextual Info: T IL I53, TILI 54. T IL I55 OPTOCOUPLERS SOOSO5O 0 2 4 9 1 . S E P T E M B E R —R E V IS E D D E C E M B E R 1 9 8 2 U L L IS T E D - F IL E # E 65085 GaAs-Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor Direct-Current Transfer Ratio , . . 10% to 50%

marking K2 diode

Abstract: MARKING 5D DIODE schottky diode marking A7
Contextual Info: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type

l4148

Abstract: 1J SOD-323 5d surface mount diode MMBL4148H
Contextual Info: ] MIMBL4I48H Surface M o u n t Sw itching Diode S W IT C H IN G D IO D E Features: 200mA M PERS "H igh Speed <4ns 100 V O I T S *Low Rever Leakage Current “ Small O utline Surface M ount SOT-23 Package SOD -323 Outline Dimensions Unit:mm K MILLMETERS A Dim

Contextual Info: BAS16 www.surgecomponents.com Silicon Epitaxial Planar Switching Diode Features • Small package 3 3 n • Low forward voltage • Fast reverse recovery time • Small total capacitance / u 1 u 2 M a rk in g C ode : 5D S O T -2 3 P la s tic P a c k a g e

MARK 5D SOT

Abstract: L1SS355T1G L1SS355T3G
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode . . L1SS355T1G Applications High speed switching 1 Features 1 Small surface mounting type. 2) High Speed. t rr =1.2ns Typ.) 2 3) High reliability with high surge current handling capability. 4) We declare that the material of product

SB160 schottky

Contextual Info: Ordering number : EN2500 S B 1 6 0 - 0 9 R No.2500 Schottky Barrier Diode Twin Type Cathode Common 90V, 16A Re c t i f i e r Applications . High frequency rectification (switching regulators, converters, choppers) Features . Low forward voltage (VFmax=0.85V)

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode . . Applications L1SS355T1G S-L1SS355T1G High speed switching Features 1 Small surface mounting type. 2) High Speed. t rr =1.2ns Typ.) 1 3) High reliability with high surge current handling capability. 4) We declare that the material of product compliance with

Contextual Info: SOLID STATE DEVICES INC 15E D | ö 3 b t ü l l □□05011 1 | SDA 304 10 amp rectifier assembly Average Output Current 10 Amps PIV 50 to 1000 Volts Maximum Thermal Resistance 5 C/Watt Junction to Case * Hermetically Sealed Diode Cells * All Machined Aluminum Case

TLP620

Abstract: TLP620-2 TLP620-4
Contextual Info: TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS A C /D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode

74HC04N

Abstract: 74HC04M 74HC04S MM74HC04M
Contextual Info: s A e m I R i c C o n H d u I L D c t o Revised February 1999 r MM74HC04 Hex Inverter are protected from dam age due to static discharge by inter­ nal diode clam ps to V qq and ground. General Description The M M 74H C 04 inverters utilize advanced silicon-gate

Contextual Info: Revised February 1999 s e m ic o n d u c t o r MM74HCU04 Hex Inverter are protected from dam age due to static discharge by inter­ nal diode clam ps to V qq and ground. General Description The M M 74H C U 04 inverters utilize advanced silicon-gate CM O S tech n olo gy to achieve operating speeds sim ilar to

DF30B

Contextual Info: SANSHA ELECTRIC NFG CO 37 E D 7 C C] 1 S 4 3 6 0 0 0 0 0 b m 1 ~ * I S e 'mj DIODES ISOLATED TYPE 3 PHASE DIODE MODULE lo c V rrm TYPE If s m V fm Ir rm V is o . mA V R M S) Tj ‘C 3 25 00 2500 4 R t h jc C /W F ig . No. • 150 0 ,6 18 150 0 .6 18 2500 150

MARKING 358 945A

Abstract: colour code diode zener MARKING 945A zener color codes Zener diode wz 140 colour code zener Zener diode wz 130 MARKING 2S SMA 927a A 928A
Contextual Info: TAIWAN SEMICONDUCTOR % 1S M A 5926 - 1S M A 5956 1.5 Watts Surface Mount Silicon Zener Diode SM A/DO-21 AAC tò RoHS C O M P L IA N C E F e a tu re s III*[f KM IK^-' l!Ki F o r su rfa ce m o u n te d a p p lic a tio n s in o rd e r to o p tim iz e b o a rd space