DIODE SG Search Results

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

silicon general 16 pin ceramic dip J

Contextual Info: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight

linfinity

Abstract: MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772
Contextual Info: SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. • 60V minimum breakdown voltage • 500mA current capability per diode

1N6510 JAN

Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
Contextual Info: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has

620 tg diode

Abstract: diode smd marking FZ Diode smd code sg SGS-THOMSON SMD diode smd ed 49 smd diode marking sG SMD MARKING CODE sg diode MARKING CODE sg Diode smd code FZ 660 tg diode
Contextual Info: fZ T ^7# SGS-THOMSON ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION The ADB18PS combines a diode bridge and a

Contextual Info: gjjj SGS-THOMSON L6210 DUAL SCHOTTKY DIODE BRIDGE . MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES . HIGH EFFICIENCY . 4A PEAK CURRENT . LOW FORWARD VOLTAGE . FAST RECOVERY TIME . TWO SEPARATED DIODE BRIDGES DESCRIPTION The L6210 is a monolithic IC containing eight Schottky diodes arranged as two separated diode

sg32

Abstract: SG3212F SG3212J CERAMIC FLATPACK jantx diodes
Contextual Info: SG3212 5ILIŒ1N GENERAL DUAL DIODE BRIDGE LIN EA R IN TEG R A TED C IR C U IT S DESCRIPTION FEATURES The Silicon General dual diode bridge features high breakdown and low forward vo lta g e . • 60V minimum breakdown voltage » 1A current capability per diode

SG6101J

Abstract: sg6101
Contextual Info: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has

Contextual Info: C T SGS-THOMSON ^ 7 # . HDlgœilLIgTOOIfSlDgi BAT 46 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. ABSOLUTE RATINGS limiting values Symbol Repetitive Peak Reverse Voltage

SMD diode sg 46

Abstract: SMD diode sg 03
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS

BAT19

Contextual Info: /= T SGS-THOMSON BAT 19 SMALL SIGNAL SCHO I IKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. Matched batches are available on request. ABSOLUTE MAXIMUM RATINGS limiting values Value

1SS198

Abstract: diode led ir
Contextual Info: TH97/10561QM 1SS198 TW00/17276EM IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance.

Contextual Info: /=7 SGS-THOMSON * 7 # . UngœillLigTOOKIDgi BAT 2 9 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Parameter Symbol Value Repetitive Peak Reverse Voltage

ADB 935

Abstract: diode smd ed 49 smd diode code ED 5l marking ADB18PS diode jc 5l Diode smd code cm SGS-THOMSON SMD marking code ADB
Contextual Info: ADB18PS  AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage : Caller Id Handset TAB 1 DESCRIPTION The ADB18PS combines a diode bridge and a

Contextual Info: SGS-THOMSON 1N 6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break­ down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.

diode a62

Abstract: BAP51-03 diode smd ED 74 lm 9805
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance

Contextual Info: ¿ = 7 SGS-THOMSON *7 # » TMMBAT 29 MD g @IlLi 'inS®ffl(gi SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE MAXIMUM RATINGS (limiting values Parameter

Contextual Info: SGS-ÏHOMSON m œ m ie ra M o e s ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION

400v p - CHANNEL mos

Abstract: STH9N50D
Contextual Info: SGS-THOMSON STH9N50D M N - CHANNEL ENHANCEMENT MODE _ FREDFET PRELIMINARY DATA TYPE STH9N50D V dss RDS on Id 500 V 0.85 a 9 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE

Contextual Info: SGS-THOMSON 57, TM BAT 49 m SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and tast switching. This device has integrated protection against ex­ cessive voltage such as electrostatic discharges.

marking sg

Abstract: diode SOD-323 SD107WS SG DIODE MARKING
Contextual Info: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·

BAR19

Contextual Info: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage

Contextual Info: £jJ SGS-THOMSON D g @ElLi^TOiDtSi TM M BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE MAXIMUM RATINGS (limiting values Parameter Symbol V r rm

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.