DIODE RECTIFIER SCHOTTKY DEVICE DATA Search Results

Contextual Info: SIEMENS Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Q62702-A1190

Contextual Info: BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface 2 mounting SMD 1 VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

smd diode code WP

Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
Contextual Info: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

B20200G

Abstract: B20200G AKA B20200 5M MARKING CODE SCHOTTKY DIODE 1505C 221D MBRF20200CT MBRF20200CTG
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

B20100G

Abstract: B20100G diode MBRF20100CTG AKA B20100G b20100 b20100 g B20100G AKA B20100G on aka AKA B20100 B20100G diode AKA
Contextual Info: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b2060

Abstract: 221D-03
Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

B20200G

Abstract: B20200G AKA b20200 b20200 diode B2020 221D-03 1505C 221D MBRF20200CT MBRF20200CTG
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

B20200G AKA

Abstract: B20200G
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b20100

Abstract: MBRF20100CTG
Contextual Info: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b20100

Abstract: MBRF20100CTG 221D-03 B20100 diode
Contextual Info: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b2060

Abstract: B2060A
Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

B2060g

Abstract: *B2060G SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

221D-03

Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b20100

Abstract: b20100 transistor b20100 32 b20100 g B20100 diode 221D AN1040 MBRF20100CT MBRF20100CT-D
Contextual Info: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

b2545g

Abstract: B2545 AKA b2545 b2545 transistor manual B2545G diode b2545G AKA MBRF2545CTG Silicon Controlled Rectifier Manual transistor manual B2545 221D
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

AB marking code smd schottky diode

Abstract: AB marking code smd diode SMD DIODE marking AB smd diode marking code 2a
Contextual Info: Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • For low-loss, fast recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD ESP: Electrostatic Discharge sensitive device, observe handling precautions!

B2545

Abstract: 221D-03
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

B2545 AKA

Abstract: b2545g B2545 b2545g aka B2545G diode mbrf2545ctg
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b2545

Abstract: 221D AN1040 MBRF2545CT
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

b2060

Abstract: 221D AN1040 MBRF2060CT "Rectifier Tube" 678
Contextual Info: MBRF2060CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

Contextual Info: SMD Schottky Barrier Diode CDBV0140-G IO=0.1A VR=30V RoHS Device SOD-323 Features -High current rectifier Schottky diode. -Low voltage, low inductance. 0.071 1.80 0.063 (1.60) -For power supply. 0.055 (1.40) 0.047 (1.20) 0.014 (0.35) 0.010 (0.25) Mechanical data

marking 4Ms

Contextual Info: SIEMENS BAT 240A Silicon Schottky Diode Preliminary data • Rectifier Schottky diode for modern applications • High reverse voltage • For power supply • For clamping and protection in all high voltage applications ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BAT 240A Silicon Schottky Diode Preliminary data • Rectifier Schottky diode for modem applications • High reverse voltage • For power supply • For clamping and protection in all high voltage applications ESD: Electrostatic discharge sensitive device, observe handling precaution!

b10 45g

Abstract: ON B10 45G 940 b10 45g b1045g SBRD81045 MBRD1045G 838 b10 45g SBRD81045T4G B1045 SBRB1045T4G
Contextual Info: MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Preferred Device SWITCHMODE Schottky Power Rectifier http://onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art