DIODE R 107 DIODES Search Results

n452 ak

Abstract: toho electronics inc 1N4537 1N454 germanium diode 0Q0017 N452 n314 1N277 1N278
Contextual Info: BKC IIT^ÔB 0000331 & • 'T-Ol -07 30E D I NTERNATI ONAL M <r 6 Lake Street PO Box 1436 Lawrence, M A USA 01841 BKC International Electronics Inc. L „ l Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N277 Low forward voltage drop

1N770

Abstract: 1N910 1N911 1N695 1N695A 1N771 1N771A 1N771B gold bonded germanium diode BKC International
Contextual Info: IITT^ÛB 0DQQ333 1 3QE D B K C INTERNATIONAL [ 1 4 BKC " International Electronics Inc. L .J X i T - O 3 .-0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N695

diode 0a47

Abstract: DIODE OA91 OA95 diode OA90 diode oa47 diode DIODE OA90 OA91 diode OA1182 0a47 diode germanium oa95
Contextual Info: B K C INTERNATIONAL 30E D • 1 1 7 H 4 3 0000355 ? ■ x iiL lL H - d - . -pOl-OT i 6 Lake Street PO Box 1436 Lawrence. MA 01841 617)681-0392 (508) 681-0392 BK C International Electronics Inc. Gold Bond Germanium Diodes TYPE G1607 FEATURES Low forward voltage drop

D3E diode

Abstract: germanium diode gold bonded germanium diode 1N3110 "Germanium diode" 1N3287 1N949 117T 1N3125 1N3287W
Contextual Info: B K C INTERNATIONAL 30E D [•■Mi BKC International Electronics Inc. L .,« il X » ■ 0DD033S 5 ■ 1- 0 1-0~7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE

germanium diode

Abstract: 1N4523 117T 1N3666 1N3666M1 1N3666M2 1N3769 1N3773 gold bonded germanium diode
Contextual Info: 3QE D B K C INTERNATIONAL EN§ IITTTÔB 0000340 •= ■ ¡ ■ ' ^ 0 3 - 0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 BKC International Electronics Inc, Telephone 617) 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE

37ba

Abstract: DC1500 Series DC1567
Contextual Info: GEC P L E S S E Y SEfllCONDS 43E D • 37bflSa5 GQlSflS2 3 ■ PLSB "T -C rf-p -} GaAs Schottky Barrier Mixer Diodes DC1300 Series BEAM LEAD D IO D E S • • • • High cut-off frequency Low noise figure Low total capacitance Robust construction Operating temperature range All types

IN5639A

Abstract: diode LT 675 IN 407 IN6053 Zener diode IN5637A in5645a IN6036A IN5650A IN6055A IN6042A in6053a
Contextual Info: POWERZORB L13 Series 1.5KW Transient Absorption Zener Diode A range of unipolar Protection diodes in a hermetically sealed metal and glass D013 package. ; 1mS expo P max c o n t-

varactor diode notes

Abstract: x band varactor diode varactor diode capacitance range CAY10 varactor diode high frequency GHz varactor diode high frequency "Varactor Diode" mullard Parametric Varactor diodes
Contextual Info: GALLIUM ARSENIDE VARACTOR DIODE CAYIO TEN TA TIV E DATA Gallium arsenide varactor diode with a high cut-off frequency for use in param etric am plifiers, frequency multipliers and switches. The diodes are of the diffused m esa type and are mounted in a sm all ceramic-metal case

1N3483

Abstract: Germanium diode D3E diode 1N3469 gold bonded germanium diode 1N3470 1N34* diode 1N3592
Contextual Info: B K C INTERNATIONAL 30E D [•«Ml BKC International Electronics Inc. I-III V » ■ 117^03 GG D G 3 3 T 2. ■ -"pOI-O"/ 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 « TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES

AN602

Abstract: ca capacitor IRD2 GD Rectifiers 500C BYV255 VT25 diode gp SRD12 St gp 04s
Contextual Info: AN602 APPLICATION NOTE MODELLING PARALLEL OPERATION OF POWER RECTIFIERS WITH PSPICE INTRODUCTION The behavior of semiconductor components is always linked with the junction temperature. This is the case, for example, in current-sharing between diodes connected in parallel. The current in each

diode 107 10K

Abstract: BA423L PMBTA64 PXTA14 diodes byd17 BYD77 MELF pmbd101 sot-143 BF990 PMBZ5230B PMBT5086
Contextual Info: SURFACEMOUNT TRANSISTORS AND DIODES • A p io n eer in Surface M ount p roducts, P hilips invented th e SOT-23 in d u stry sta n d ard SM package. Offering full e x p e rtise and innovation in S urface M ount technology, Philips has in tro d u c ed th e n ew est m edium -pow er one-w att

3469b

Abstract: Diode catalog 5082-2755 Hewlett-Packard Japan zero bias diode HSCH-5019
Contextual Info: All Schottky Diodes are Zero Bias Detectors Application Note 988 Introduction Zero bias detectors with higher forward voltage have better voltage sensitivity. For example, the HSCH-3206 with a forward voltage of about 200 millivolts at 0.1 milliampere is better than the HSCH-5019

SP126

Contextual Info: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt

mil-m-28837

Abstract: MCL fREQUENCY mIXERS
Contextual Info: Product Testing For High Reliability Ultra-ReP Mini-Circuit's mixers, phase detectors, frequency doublers and limiters are "Ultra-Rel ": They carry a fiveyear guarantee, a reliability breakthrough attributed mainly to unique Ultra-Rel® diodes th at easily m eet

hsch 3486 zero bias schottky diode

Abstract: "zero-bias schottky diode" HSCH-3486 S11 SCHOTTKY diode Microwave detector diodes Microwave detector diodes 18 GHz NKT 90 Zero Bias Small Detector Diodes 5963-0951E HSMS-2850
Contextual Info: The Zero Bias Schottky Detector Diode Application Note 969 Introduction Table 1. Forward Voltage Characteristic Since all diodes in this discussion are Schottky diodes, the forward current obeys the equation: I = IS q e nkT ( (V–IRS -1 The ideality factor, n, is close to

hsch 3486 zero bias schottky diode

Abstract: hsch-3486 HSMS-8101 hsms-2850
Contextual Info: The Zero Bias Schottky Detector Diode Application Note 969 Introduction Table 1. Forward Voltage Characteristic Since all diodes in this discussion are Schottky diodes, the forward current obeys the equation: I = IS q ( (V–IRS nkT e -1 The ideality factor, n, is close to

XLO8

Abstract: diode hp 5082-2080 hp 5082-2830 DOD-HDBK-1686A DOD-HDBK-1686 hp 5082-2900 diode
Contextual Info: WhoI H EW L E T T 1 "KM PA CK A R D Tri Metal Beam Lead Schottky Diodes Reliability Data HSCH-5300 Series HSCH-5500 Series Conclusion Hewlett-Packard’s beam lead diodes have successfully passed stringent environmental testing. Hewlett-Packard beam lead diodes may be used in military

x band diode detector waveguide

Abstract: detector diode 3469b Diode catalog HSCH-3206 avago krieger HSCH-5019
Contextual Info: All Schottky Diodes are Zero Bias Detectors Application Note 988 Introduction Zero bias detectors with higher forward voltage have better voltage sensitivity. For example, the HSCH-3206 with a forward voltage of about 200 millivolts at 0.1 milliampere is better than the HSCH-5019 with a forward

Contextual Info: FAST RECOVERY DIODE 17.7A/100— 200V/trr : 35nsec C16T10F C16T20F C16T20F-11A ° ¡SQUARE - PAK| TO-263AB SMD Packaged in 24mm Tape and Reel : C16T*»F o Tabless T0-220:C16T20F-11A o Dual Diodes — Cathode Common 0 Ultra - Fast Recovery ° Low Forward Voltage Drop

5082-2815

Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Contextual Info: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

Contextual Info: FAST RECOVERY DIODE 17.7A/100— 200V/trr : 35nsec F16P10FS F16P20FS 3.11122 M AX F EATU R ES _ h l.3 i.4 0 5i ° Similar to TO-220AB Case, Fully Molded Isolation ° Dual Diodes - Cathode Common ° Ultra - Fast Recovery MAX5' •‘ 1M6UMAX » Low Forward Voltage Drop

F16P10FS

Abstract: F16P20FS H122
Contextual Info: FAST RECOVERY DIODE 17.7A/100— 20 0 V /trr : 35nsec F16P10FS F16P20FS 3.K.122 FEATURES °Similar to T0-220AB Case, Fully Molded Isolation " M AX ^ I0 .3 i.4 0 5 ). 3.4 .134)„ ' 3.01.118)^ — Ï— 6.9(.272) 6.3(.248) 2.851.112) 2.551.1001 » Dual Diodes - Cathode Common

Contextual Info: Philips Semiconductors Product specification Rectifier diodes BYQ28EB series ultrafast, rugged_ _ GENERAL DESCRIPTION Glass passivated dual epitaxial rectifier diodes in a plastic envelope suitable for surface mounting,

SRK-12ZB

Abstract: D1JA SRK-12ZBT06 SRK-12ZB - 06 FRO 021 D1K20 microwave oven diode 12zb D4BB 6A05 DIODE
Contextual Info: RECTIFIER DIODES SHINDENGEN ELECTRIC MF6 32E D 021=1307 QGaaoib 7 ISHE4_ î] Diodes*for Microwave*Oven*g - 'fef ± nn V rm lo [kV ] [A ] PC] SRK-12ZB T06 7 0.4 50 -12 Z B (T 0 7 ) 8 0.3S 50 -t2 Z B (T 0 9 ) 9 0.35 120* & f* To Typa No. æ: m fê * f I I 5Ê fê