DIODE MARKING D9 Search Results
DIODE MARKING D9 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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DIODE MARKING D9 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1n58171n8211n58181n821a+11 | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1n8211n821a1n8231n823a+16 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SOT—23 SCHOTTKY DIODE FEATURES CMPSH-3 Marking: D95 CMPSH-3A Marking: DB1 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage |
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ot-23037tpy950tpy550ref+1 | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1n58171n8211n58181n821a+11 | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1n58171n8211n58181n821a+11 | |
marking d6 sod123 diode
Abstract: marking AA DIODE SOD CBVK741B019 F63TNR MMSD914 MMSZ5221B SOD-123 marking code A1 semiconductor band color code MARKING CODE diode sod123 FS F63TNR 3.2
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mmsd914od123mmbd1201-1205marking d6 sod123 diode+8 | |
sod123 diode 5H
Abstract: SOD123 5h marking AA DIODE SOD CBVK741B019 F63TNR MMSD4148 MMSZ5221B SOD-123 marking code A1 diode sod123 W1 semiconductor band color code
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mmsd4148od123mmbd1201-1205sod123 diode 5h+8 | |
SMD diode D95
Abstract: transistor smd marking BA sot-23 BAT64
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iso/ts16949bat64ot-23c-120+2 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS401 SOT-323 Schottoky Barrier Diode FEATURES Low forward voltage Low reverse current Small total capacitance 1 3 2 MARKING: D9 Maximum Ratings @Ta=25℃ Parameter Symbol |
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ot-3231ss401300ma | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3 SOT-23 SCHOTTKY BARRIER DIODE FEATURES High Switching Speed Low Forward Voltage MARKING: D95 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Value |
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ot-23100ma | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS4 01 SOT-323 Schottoky Barrier Diode FEATURES Low forward voltage Lo w reverse current Small total capacitance 1 3 2 MARKING: D9 Maximum Ratings @Ta=25℃ Parameter Symbol |
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ot-323300ma | |
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Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SMALL SIGNAL SCHOTTKY DIODE BAT64 SOT-23 3 Pin Configuration MARKING:- D95 1 = ANODE 2 = NC 3 = CATHODE 1 2 |
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bat64ot-23c-120 | |
BAR43/D95
Abstract: MARKING W2 SOT23 da5 diode "MARKING CODE" LA sot-23 fairchild marking codes sot-23 marking db2 bar43c A0 SOT-23 BAR43 BAR43A BAR43S
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bar43/a/c/sbar43bar43abar43c+8 | |
D92-02
Abstract: D9202 d92 02 diode d92-02 diode d92 02
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phase125d92-02o-220ac18-apr-2013+4 | |
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Diode marking MFW
Abstract: MDC03 Marking TRANSISTOR 737 MFW14 transistor marking D9 common collector npn array pnp 8 transistor array transistor 736
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OCR Scan |
sc-74dta114ykadtc114ykasc-59+8 | |
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Contextual Info: BSZ440N10NS3 G 3 Power-Transistor Product Summary Features V 9H J R 9H"[Z#$YMd , Y Q(@D9=9J546?B43 433?>F5BC9?> I9 )0 6 Q' 381>>5<>?B=1<<5F5< E=%IH9HDC%0 |
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bsz440n10ns3381b75931d9d1b75d | |
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Contextual Info: IPB031NE7N3 G TM 3 Power-Transistor Product Summary Features ?> Q#451<6?B89786B5AE5>3ICG9D389>71>4 3?>F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y I9 ) 6 QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D (& |
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ipb031ne7n3b53d96931d9cg9d389381b75+3 | |
BAT43S
Abstract: BAT43C BAT43A BAT43 DA5 sot-23
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bar43/a/c/sbat43bat43abat43c+2 | |
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Contextual Info: IPB030N08N3 G 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4CI>3 B53 V 9H 0 J R 9H"[Z#$YMd +&( Y I9 .( 6 QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D (& |
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ipb030n08n3931d9cg9d389381b75+2 | |
4b 5c marking
Abstract: PG-TO-263-7
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ipb030n08n34b 5c markingpg-to-263-7 | |
marking eb5
Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B
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ipp139n08n3ipi139n08n3ipb136n08n365ae5+5 | |
marking eb5
Abstract: diode marking eb5 BSZ440N10NS3 i95B DS 654 5C
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bsz440n10ns365ae5marking eb5diode marking eb5+2 | |
IPI024N06N3 GContextual Info: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4CI>3 B53 Q @D9=9J54D538>?<?7I6?B 3?>F5BD5BC V 9H .( J R ,?>=1H,& *& |
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ipb021n06n3ipi024n06n3ipp024n06n3cg9d389+5 | |
Diode 9H
Abstract: d5cd IPB031NE7N3 G
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ipb031ne7n3diode 9hd5cdipb031ne7n3 g | |