DIODE MARKING CODE A13 Search Results

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: SMD Other Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF Max. Reverse Current @ VR VRRM (V) VF (V) IF (mA) IR (µA) VR (V) Max. Diode Max. Reverse CapaciRecovery tance Pinout Package @1MHz Diag. Time 0V CT

MMBD1503

Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
Contextual Info: 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 A11 A13 A14 A15 1 2 3 3 1504 1503 3 1 2 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L.

Contextual Info: TSP15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement

Contextual Info: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement

Contextual Info: TSP10U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement

Contextual Info: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

a15 diode

Abstract: diode MARKING CODE a13 MMBD1503A sot-23 diode marking Av SOT23 DIODE marking CODE AV SOT-23 MARKING AV SOT-23 marking BR 357 SOT23 sot-23 marking code pd sot-23 br 13
Contextual Info: High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Two element incorporated into one package. Emitter-coupled transistors z MMBD1501A MMBD1503A Reduction of the mounting area and assembly cost by one half. z RoHS product for packing code suffix "G",

Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency

Contextual Info: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency

Contextual Info: TSF2080C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF20U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

MOSFET A13

Contextual Info: TSM6NB60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω)(max) ID (A) 600 1.6 @ VGS =10V 6 Features Block Diagram ● Advanced high dense cell design. ● High Power and Current handing capability.

Contextual Info: PPJA3413 20V P-Channel Enhancement Mode MOSFET Voltage -20 V -3.4A Current SOT-23 Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-3.4A<82mΩ  RDS(ON) , VGS@-2.5V, ID@-2.2A<110mΩ  RDS(ON) , VGS@-1.8V, ID@-1.2A<146mΩ  Advanced Trench Process Technology

Contextual Info: MMBD1501A / 1503A / 1504A / 1505A SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features      Very Low Leakage Current Single and Dual Diode Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications

SOT23 DIODE marking CODE AV

Abstract: a15 diode 357 SOT23 marking A11 SOT-23 MARKING AV sot-23 marking a13 marking AV package sot23 diode a13 A14 marking SOT sot23 package marking AV
Contextual Info: MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage Diode SOT-23 Features — Two element incorporated into one package. Emitter-coupled transistors — Reduction of the mounting area and assembly cost by one half. Applications — Dimensions in inches and (millimeters)

marking 08 sot-23

Abstract: BL SOT23 a15 diode a13 marking sot23 1504A SOT A14 marking SOT23 V 4 diode A14 marking SOT SOT23 A13 MMBD1503A
Contextual Info: BL Galaxy Electrical Production specification High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Pb Two element incorporated into one package. Lead-free Emitter-coupled transistors z MMBD1501A MMBD1503A Reduction of the mounting area and

Contextual Info: UGF8JD Taiwan Semiconductor CREAT BY ART Isolated Ultra Fast Rectifier FEATURES - Especially suited as boost diode on continuous mode power factor correctors - Ideal Solution for hard switching condition - High capability for high di/dt operation. Downsizing of mosfet and heatsink

A13 MARKING CODE

Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
Contextual Info: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability

power transistor Ic 4A NPN to - 251

Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
Contextual Info: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability