DIODE MARKING 74 Search Results

marking u1s SOT-143

Abstract: Marking code U1s sot143 marking code u1s switch diode DIODE JS Q62702-G38 DIODE Q marking
Contextual Info: Silicon Switching Diode Array ● Bridge configuration ● High-speed switch diode chip BGX 50 A Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage

marking u1s SOT-143

Abstract: VPS05178 chip Marking 3A3
Contextual Info: BGX 50A Silicon Switching Diode Array 3 • Bridge configuration • High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type Marking BGX 50A U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 Package 4=A2/C3 SOT-143 Maximum Ratings Parameter Symbol

marking code R5 sot23

Abstract: R5 SOT 820 marking MARKING CODE VF CBAS17
Contextual Info: Central CBAS17 TM Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBD4150 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Marking CMBD4150 = D18 PACKAGE OUTLINE DETAILS

Contextual Info: >IL CMBD4150 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Marking CMBD4150 = D18 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.09 0.48 0.38 3 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.6 2.4 JL02 0.89" _2 .00_ 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS

marking P2 sot-23

Abstract: marking wa sot-23
Contextual Info: CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204 27 MMBD1203 26 MMBD1205 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

transistor 1201 1203 1205

Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
Contextual Info: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

PESDXS5UD

Abstract: PESD12VS5UD PESD24VS5UD sc-74 e5 PESD15VS5UD MARKING CODE E5 NXP pesd24vs5ud t
Contextual Info: PESDxS5UD series Fivefold ESD protection diode arrays Rev. 02 — 7 December 2006 Product data sheet 1. Product profile 1.1 General description Fivefold ElectroStatic Discharge ESD protection diode arrays in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package designed to protect up to five signal lines

DMC2038

Abstract: DMC2038LVT
Contextual Info: DMC2038LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 20V Q2 -20V Features and Benefits RDS(ON) ID TA = 25°C 35mΩ @ VGS = 4.5V 4.5A 56mΩ @ VGS = 1.8V 3.5A 74mΩ @ VGS = -4.5V 3.1A 168mΩ @ VGS = -1.8V 2.0A • • • • • •

Contextual Info: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

IRF7704PBF

Contextual Info: PD- 96025 IRF7704PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free VDSS RDS(on) max (mW) ID -40V 46@VGS = -10V -4.6A 74@VGS = -4.5V -3.7A Description

74HC28

Contextual Info: M74HC280 9-bit parity generator Datasheet - production data • Pin and function compatible with 74 series 280 • ESD performance – HBM: 2 kV – MM: 200 V – CDM: 1 kV SO14 TSSOP14 Description The M74HC280 is a high-speed CMOS 9-bit parity generator fabricated with silicon gate

B2HKF

Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Contextual Info: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °

JESD97

Abstract: STY80NM60N 80NM60N
Contextual Info: STY80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh II Power MOSFET Max247 Features Type VDSS @ TJmax RDS on max ID STY80NM60N 650 V < 0.035 Ω 74 A • The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge

VUB72-12noxt

Abstract: vub72-12 vub72
Contextual Info: VUB72-12NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1200 V VCES = 1200 V I DAV = I FSM = 74 A I C25 = 58 A 550 A VCE sat = 1.85 V 3~ Rectifier Bridge + Brake Unit Part number VUB72-12NOXT Backside: isolated 6 11 12 10 NTC 1~ 7~ 9~ 5 2

VUB72

Abstract: VUB7216NO VUB7216NOXT vuB72-16noXT brake DIODE Qrr20 VUB72-16 VUB72-12NOXT
Contextual Info: VUB72-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = I FSM = 74 A I C25 = 58 A 550 A VCE sat = 1.85 V 3~ Rectifier Bridge + Brake Unit Part number VUB72-16NOXT Backside: isolated 6 11 12 10 NTC 1~ 7~ 9~ 5 2

IN74LV640

Abstract: IN74LV640D IN74LV640N 74LV640
Contextual Info: TECHNICAL DATA IN74LV640 Octal 3-State Inverting Bus Transceiver The 74LV640 is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT640. The 74LV640 provides six inverting buffers with Schmitt-trigger action. • • • • Wide Operating Voltage: 1.2 to 3.6 V

74LVC1G06

Abstract: 74LVC1G06GF 74LVC1G06GM 74LVC1G06GV 74LVC1G06GW JESD22-A114E
Contextual Info: 74LVC1G06 Inverter with open-drain output Rev. 07 — 12 July 2007 Product data sheet 1. General description The 74LVC1G06 provides the inverting buffer. Input can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in a mixed 3.3 V and 5 V environment.

Contextual Info: TO SHIBA 1SS308 1SS308 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 2 . 8 - 0 .3 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance +0.2 : SC-74A : Vp 3 = 0.92V (Typ.)

Contextual Info: NDD60N745U1 Advance Information N-Channel Power MOSFET 600 V, 745 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V BR DSS RDS(ON) MAX 600 V 745 mW @ 10 V Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise

NTB4302

Abstract: NTB4302T4 NTP4302
Contextual Info: NTP4302, NTB4302 Advance Information Power MOSFET 74 Amps, 30 Volts N–Channel TO–220 and D2PAK Features • • • • • http://onsemi.com Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified

74LVC3G06

Abstract: 74LVC3G06DC 74LVC3G06DP MO-187
Contextual Info: 74LVC3G06 Triple inverter with open-drain output Rev. 01 — 7 June 2004 Product data sheet 1. General description The 74LVC3G06 is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families.

mc33174dg

Abstract: NCV33174DTBR2G MC3317x mc33172pg
Contextual Info: MC33171, 2, 4, NCV33172, 4 Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74, NCV33172/74 series of monolithic operational amplifiers. These devices operate at 180 mA

BAP1321LX

Contextual Info: BAP1321LX Silicon PIN diode Rev. 01 — 30 July 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ ■ High voltage, current controlled