DIODE MARKING 08 Search Results
DIODE MARKING 08 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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DIODE MARKING 08 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
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bas19lt1bas20lt1bas21lt1bas19+4 | |
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1n58171n8211n58181n821a+11 | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1n8211n821a1n8231n823a+16 | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1n58171n8211n58181n821a+11 | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1n58171n8211n58181n821a+11 | |
3vf4Contextual Info: RECTRON BAV99 SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE FEATURES Silicon epitaxial planar diode Fast switching Surface mounting device "A7" Device marking .020 0.50 .070 (1.78) * Weight : apporx. 0.008g .110 (2.80) .081 (2.04) .119 (3.04) |
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bav99ot-23150ma100ua+1 | |
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Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no. |
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1n5408 | |
1N4148WSContextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C |
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1n4148ws | |
A2 DIODE SMD CODE MARKING
Abstract: PMBD353 SMD marking CODE 4F pj-25 diode
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m3d088pmbd353sca73613514/04/pp8+3 | |
philips bav23s
Abstract: MARKING L31 SMD BAV23S L31 l31 sot23 SMD L31 BAV23S Philips smd code marking sot23 marking L31 PHILIPS
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m3d088bav23ssca73613514/05/pp8+7 | |
diode smd marking jy
Abstract: BAV199
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m3d088bav199sca73613514/04/pp8+1 | |
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Contextual Info: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! , ! , , , Type Package Configuration Marking BAV222 |
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bav222baw222ot41650/60hz | |
Diode SJ
Abstract: Schottky Diode 30V 1A SOD Schottky Diode 30V 1A SOD123 B5817W B5818W B5819W Silicon Schottky Diode sod123 sl DIODE sod123
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b5817w-b5819wod-123b5817wb5818w+6 | |
A2 DIODE SMD CODE MARKING
Abstract: MAM383 DIODE smd marking A1 smd diode A4 smd diode code A4 marking code 10 sot23 marking CODE R SMD DIODE SMD DIODE A4 data smd diode marking code smd diode marking code a2
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m3d088bav70sca73613514/05/pp12+10 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PMBD353 Schottky barrier double diode Product data sheet Supersedes data of 1999 May 25 2001 Oct 15 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD353 PINNING MARKING • Low forward voltage |
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m3d088pmbd353613514/04/pp7 | |
diode marking w9
Abstract: W9 diode diode w9 marking w9 diode BAS16WS marking CODE w9 marking w9
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bas16wsod-323diode marking w9w9 diode+4 | |
diode marking w9
Abstract: W9 diode BAS16WS marking W9 marking CODE w9
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bas16wsod-323diode marking w9w9 diode+2 | |
BAV199Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 PINNING MARKING • Plastic SMD package |
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m3d088bav199613514/04/pp8 | |
NXP BAV199 date code
Abstract: BAV199 NXP marking code diode smd marking jy smd code marking WV BAV199
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m3d088bav199613514/04/pp8nxp bav199 date code+3 | |
PMBD353
Abstract: NXP PMBD353
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m3d088pmbd353613514/04/pp7nxp pmbd353 | |
smd diode marking 9 ba
Abstract: marking c7 marking c7 sot-23 transistor smd marking BA sot-23 CMBD99 WT SOT23-3
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Original |
iso/ts16949cmbd99ot-23c-120+5 | |
BAT62-08S
Abstract: VPS05604
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Original |
bat62-08sot-363vps05604eha07193+5 | |
marking code 62 3 pin diodeContextual Info: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3 |
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62-08sot-363vps05604eha07193+5 | |
Marking w1s sot
Abstract: VPS05604 Device Marking A3 top marking c3 MARKING w1s sot363
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Original |
70-08sot-363vps05604eha07193+8 | |