DIODE IN 4004 Search Results

Contextual Info: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency

J920

Abstract: BP103
Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime

L1017

Abstract: DIN 50014 L-1017 UL94V-O Telefunken u 116
Contextual Info: Temic CNY65Exi Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite

L-1017

Abstract: TI-327 UL94V-O DIN 50014 L1017
Contextual Info: Temic CNY65Exi Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite

Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 464 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Features Wesentliche Merkmale • Strahlung im sichtbaren Rotbereich ohne IRAnteil

DIN40045

Contextual Info: CNY21Exi Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in

HAS 50-S

Abstract: infrared emitters and detectors data book temic Book Microelectronic CNY21Exi t-1 ir phototransistor Ex-90C 1014 1987 CNY21 Telefunken Electronic Telefunken Phototransistor
Contextual Info: CNY21Exi TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead plastic dual inline packages. The single components are mounted on one leadframe in

DIN 50014 STANDARD

Abstract: DIN 50014 DIN EN 50014 STANDARD CNY65
Contextual Info: CNY65Exi Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

tk19 infrared

Abstract: tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U
Contextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

2158U

Contextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

tk19 infrared

Abstract: tk19 Telefunken tk19 ir tk19 VISHAY tk19 tk19 200 CNY65 ir-diode tk19 001
Contextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

JTK19

Contextual Info: CNY65Exi Vishay Telefun ken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

D291S

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 721 S C ø3,5± A 0,1 4875-0,2 Applikation: Freilaufdiode in Spannungszwischenkreisumrichter bis VD DC = 2000 V VWK January Schnelle Gleichrichterdiode Fast Diode D 721 S 45 T Elektrische Eigenschaften / Electrical properties

Contextual Info: Temic CNY65Exi S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description T he C N Y 65Exi consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in a 4-lead plastic package. T he single com ponents are m ounted in opposite

1n4001 trr

Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

surface mount diode w1

Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

diode rectifier 1n4001

Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS

CNY21EX

Contextual Info: Tem ic CNYHExi S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description T he CN Y 21Exi consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in a 4-lead plastic dual inline package. T he single com ponents are m ounted on one leadfram e in

Contextual Info: iv iiu ì u n c in i 1N4150-1 Switching Diode P rogresa P ow ered b y T ech n o lo g y ESA QUALIFIED FEATURES • • • • Qualified to ESA/SCC 5101/024 Metallurgical Bond DO-35 Package Hermetically Sealed Glass Package MAXIMUM RATINGS Operating Temperature:

Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/60 °C Tcase = 25/60 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 475 / 400

As3000

Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S V cG R lc IcM = 20 Toase = 25/85 °C Tease = 25/85 °C; tp = 1 ms R ge V ges Ptot Tj, Tstg) per IGBT, T oase = 25 °C Visol AC, 1 min. DIN 40040 DIN IEC 68T.1 humidity

SKM 400 gal 124 IGBT

Abstract: skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits semikron skm 300 gar 124 IGBT inverter calculation FOR A UPS SKM 150 GB 124 D
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400

LB 124D

Abstract: skm 40 gb 124 d 400G124 the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si DIODE LS15
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400

Contextual Info: se MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S V cG R lc IcM = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms R ge V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate AC, 1 min. DIN 40040 DIN IEC 68T.1