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    DIODE IN 4004 Search Results

    DIODE IN 4004 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS224AJ/B
    Rochester Electronics LLC 54LS224 - 64-Bit FIFO Memories PDF Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet

    DIODE IN 4004 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency


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    235kD5 OT-23 OT-143 11I181I8I88B PDF

    J920

    Abstract: BP103
    Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime


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    LD242 BP103, BPX63 CT018) LD242 -LE78MM J920 BP103 PDF

    L1017

    Abstract: DIN 50014 L-1017 UL94V-O Telefunken u 116
    Contextual Info: Temic CNY65Exi Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 12-Dec-97 L1017 DIN 50014 L-1017 UL94V-O Telefunken u 116 PDF

    L-1017

    Abstract: TI-327 UL94V-O DIN 50014 L1017
    Contextual Info: Temic CNY65Exi Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 12-Dec-97 L-1017 TI-327 UL94V-O DIN 50014 L1017 PDF

    Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 464 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Features Wesentliche Merkmale • Strahlung im sichtbaren Rotbereich ohne IRAnteil


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    Sam1998-07-15 SFH464 OHR01457 PDF

    DIN40045

    Contextual Info: CNY21Exi Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in


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    CNY21Exi CNY21Exi Ex-90 D-74025 1-Jun-96 DIN40045 PDF

    HAS 50-S

    Abstract: infrared emitters and detectors data book temic Book Microelectronic CNY21Exi t-1 ir phototransistor Ex-90C 1014 1987 CNY21 Telefunken Electronic Telefunken Phototransistor
    Contextual Info: CNY21Exi TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead plastic dual inline packages. The single components are mounted on one leadframe in


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    CNY21Exi CNY21Exi Ex-90 D-74025 HAS 50-S infrared emitters and detectors data book temic Book Microelectronic t-1 ir phototransistor Ex-90C 1014 1987 CNY21 Telefunken Electronic Telefunken Phototransistor PDF

    DIN 50014 STANDARD

    Abstract: DIN 50014 DIN EN 50014 STANDARD CNY65
    Contextual Info: CNY65Exi Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 11-Jun-96 DIN 50014 STANDARD DIN 50014 DIN EN 50014 STANDARD CNY65 PDF

    tk19 infrared

    Abstract: tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U
    Contextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE CNY65 2158U tk19 infrared tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U PDF

    2158U

    Contextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 2158U PDF

    tk19 infrared

    Abstract: tk19 Telefunken tk19 ir tk19 VISHAY tk19 tk19 200 CNY65 ir-diode tk19 001
    Contextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 tk19 infrared tk19 Telefunken tk19 ir tk19 VISHAY tk19 tk19 200 CNY65 ir-diode tk19 001 PDF

    JTK19

    Contextual Info: CNY65Exi Vishay Telefun ken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE 95HOI5 95H0I6 CNY65 JTK19 11-Ja PDF

    D291S

    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 721 S C ø3,5± A 0,1 4875-0,2 Applikation: Freilaufdiode in Spannungszwischenkreisumrichter bis VD DC = 2000 V VWK January Schnelle Gleichrichterdiode Fast Diode D 721 S 45 T Elektrische Eigenschaften / Electrical properties


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    Contextual Info: Temic CNY65Exi S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description T he C N Y 65Exi consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in a 4-lead plastic package. T he single com ponents are m ounted in opposite


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    CNY65Exi 65Exi 50014-1977/V -1977/VDE 11-Jun-96 1-Jun-96 PDF

    1n4001 trr

    Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


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    1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1n4001 trr PDF

    surface mount diode w1

    Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
    Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


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    1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount diode w1 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount PDF

    diode rectifier 1n4001

    Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
    Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS


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    1N4001 1N4007 EIA-RS-481) NRD4001 NRD4007) diode rectifier 1n4001 NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007 PDF

    CNY21EX

    Contextual Info: Tem ic CNYHExi S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description T he CN Y 21Exi consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in a 4-lead plastic dual inline package. T he single com ponents are m ounted on one leadfram e in


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    21Exi iov94 CNY21Exi 11-Jun-96 CNY21EX PDF

    Contextual Info: iv iiu ì u n c in i 1N4150-1 Switching Diode P rogresa P ow ered b y T ech n o lo g y ESA QUALIFIED FEATURES • • • • Qualified to ESA/SCC 5101/024 Metallurgical Bond DO-35 Package Hermetically Sealed Glass Package MAXIMUM RATINGS Operating Temperature:


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    1N4150-1 DO-35 500mW 200mA, --100Q 400mA, 300mA, MSC0313A PDF

    Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/60 °C Tcase = 25/60 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 475 / 400


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    As3000

    Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S V cG R lc IcM = 20 Toase = 25/85 °C Tease = 25/85 °C; tp = 1 ms R ge V ges Ptot Tj, Tstg) per IGBT, T oase = 25 °C Visol AC, 1 min. DIN 40040 DIN IEC 68T.1 humidity


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    PDF

    SKM 400 gal 124 IGBT

    Abstract: skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits semikron skm 300 gar 124 IGBT inverter calculation FOR A UPS SKM 150 GB 124 D
    Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400


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    LB 124D

    Abstract: skm 40 gb 124 d 400G124 the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si DIODE LS15
    Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400


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    Contextual Info: se MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S V cG R lc IcM = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms R ge V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate AC, 1 min. DIN 40040 DIN IEC 68T.1


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    L124D GAR124D PDF