DIODE IN 4004 Search Results
DIODE IN 4004 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54LS224AJ/B |
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54LS224 - 64-Bit FIFO Memories |
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| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet |
DIODE IN 4004 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency |
OCR Scan |
235kD5 OT-23 OT-143 11I181I8I88B | |
J920
Abstract: BP103
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OCR Scan |
LD242 BP103, BPX63 CT018) LD242 -LE78MM J920 BP103 | |
L1017
Abstract: DIN 50014 L-1017 UL94V-O Telefunken u 116
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CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 12-Dec-97 L1017 DIN 50014 L-1017 UL94V-O Telefunken u 116 | |
L-1017
Abstract: TI-327 UL94V-O DIN 50014 L1017
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OCR Scan |
CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 12-Dec-97 L-1017 TI-327 UL94V-O DIN 50014 L1017 | |
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Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 464 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Features Wesentliche Merkmale • Strahlung im sichtbaren Rotbereich ohne IRAnteil |
OCR Scan |
Sam1998-07-15 SFH464 OHR01457 | |
DIN40045Contextual Info: CNY21Exi Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in |
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CNY21Exi CNY21Exi Ex-90 D-74025 1-Jun-96 DIN40045 | |
HAS 50-S
Abstract: infrared emitters and detectors data book temic Book Microelectronic CNY21Exi t-1 ir phototransistor Ex-90C 1014 1987 CNY21 Telefunken Electronic Telefunken Phototransistor
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CNY21Exi CNY21Exi Ex-90 D-74025 HAS 50-S infrared emitters and detectors data book temic Book Microelectronic t-1 ir phototransistor Ex-90C 1014 1987 CNY21 Telefunken Electronic Telefunken Phototransistor | |
DIN 50014 STANDARD
Abstract: DIN 50014 DIN EN 50014 STANDARD CNY65
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CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 11-Jun-96 DIN 50014 STANDARD DIN 50014 DIN EN 50014 STANDARD CNY65 | |
tk19 infrared
Abstract: tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U
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CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE CNY65 2158U tk19 infrared tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U | |
2158UContextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and |
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CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 2158U | |
tk19 infrared
Abstract: tk19 Telefunken tk19 ir tk19 VISHAY tk19 tk19 200 CNY65 ir-diode tk19 001
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CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 tk19 infrared tk19 Telefunken tk19 ir tk19 VISHAY tk19 tk19 200 CNY65 ir-diode tk19 001 | |
JTK19Contextual Info: CNY65Exi Vishay Telefun ken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and |
OCR Scan |
CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE 95HOI5 95H0I6 CNY65 JTK19 11-Ja | |
H24B2Contextual Info: OPTOELECTRONICS H24B1 H24B2 PACKAGE DIMENSIONS 0.75 0.60 D + DESCRIPTION The H24B series consists of a gallium arsenide infrared em itting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing com patible with a dual in-line package. |
OCR Scan |
H24B1 H24B2 E51868 H24B2 | |
VISHAY tk19
Abstract: tk19 tk19 200 phototransistor tk19
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OCR Scan |
CNY65Exi_ CNY65Exi 50014-1977/VDE 50020-1977/VDE CNY65 81///2158U VISHAY tk19 tk19 tk19 200 phototransistor tk19 | |
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A1080-A
Abstract: D291S
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D291SContextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 721 S C ø3,5± A 0,1 4875-0,2 Applikation: Freilaufdiode in Spannungszwischenkreisumrichter bis VD DC = 2000 V VWK January Schnelle Gleichrichterdiode Fast Diode D 721 S 45 T Elektrische Eigenschaften / Electrical properties |
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D291SContextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 721 S C ø3,5± A 0,1 4875-0,2 Applikation: Freilaufdiode in Spannungszwischenkreisumrichter bis VD DC = 2000 V VWK January Schnelle Gleichrichterdiode Fast Diode D 721 S 45 T Elektrische Eigenschaften / Electrical properties |
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17cation D291S | |
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Contextual Info: Temic CNY65Exi S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description T he C N Y 65Exi consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in a 4-lead plastic package. T he single com ponents are m ounted in opposite |
OCR Scan |
CNY65Exi 65Exi 50014-1977/V -1977/VDE 11-Jun-96 1-Jun-96 | |
Siemens RS 1001 L
Abstract: SFH2030
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OCR Scan |
LD274 LD275 LD274: LD275: SFH484 BP103B, SFH415, SFH485, Siemens RS 1001 L SFH2030 | |
1N4007 sma
Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
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1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p 1N4007 sma 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA NRD4003 | |
surface mount 1n4007Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION |
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1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount 1n4007 | |
SURFACE MOUNT SILICON RECTIFIER
Abstract: DO-214AC, SMA 1N4007
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1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) SURFACE MOUNT SILICON RECTIFIER DO-214AC, SMA 1N4007 | |
1n4001 trrContextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS |
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1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1n4001 trr | |
surface mount diode w1
Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
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1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount diode w1 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount | |