DIODE IN 4004 Search Results

Contextual Info: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency

J920

Abstract: BP103
Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime

L1017

Abstract: DIN 50014 L-1017 UL94V-O Telefunken u 116
Contextual Info: Temic CNY65Exi Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite

L-1017

Abstract: TI-327 UL94V-O DIN 50014 L1017
Contextual Info: Temic CNY65Exi Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite

5551b

Contextual Info: 1SR155-400 Diode, rectifying, surface mount These diodes are suitable for high density surface mounting on printed circuit boards. Features Dimensions Units : mm • available in PMDM (LSM) package • part marking, 4004R 2.0 ±0.2 CM k J - Applications

1sr155-400

Contextual Info: 1SR155-400 Diode, rectifying, surface mount These diodes are suitable for high density surface mounting on printed circuit boards. Dimensions Units : mm 20± 02 Features • available in PMDM (LSM) package • part marking, 4004R Applications • rectifying

Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 464 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Features Wesentliche Merkmale • Strahlung im sichtbaren Rotbereich ohne IRAnteil

DIN 50014 STANDARD

Abstract: DIN 50014 DIN EN 50014 STANDARD
Contextual Info: CNY65Exi TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead plastic packages. The single components are mounted in opposite position,

Diode LT 5333

Abstract: D-73277 f9250
Contextual Info: AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity protection diode and a suppressor diode. The line is

DIN40045

Contextual Info: CNY21Exi Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in

HAS 50-S

Abstract: infrared emitters and detectors data book temic Book Microelectronic CNY21Exi t-1 ir phototransistor Ex-90C 1014 1987 CNY21 Telefunken Electronic Telefunken Phototransistor
Contextual Info: CNY21Exi TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead plastic dual inline packages. The single components are mounted on one leadframe in

DIN 50014 STANDARD

Abstract: CNY65
Contextual Info: CNY65Exi Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

DIN 50014 STANDARD

Abstract: DIN 50014 DIN EN 50014 STANDARD CNY65
Contextual Info: CNY65Exi Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

tk19 infrared

Abstract: tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U
Contextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

tk19 infrared

Abstract: tk19 Telefunken tk19 ir tk19 VISHAY tk19 tk19 200 CNY65 ir-diode tk19 001
Contextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

tk19

Abstract: tk19 200 VISHAY tk19
Contextual Info: CNY65Exi Vishay Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

L0242

Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation In Near Infrared Range * Cathode Electrically Connected to Case Operating and Storage Temperature Range T0P, Tstg . -40° to +80°C

JTK19

Contextual Info: CNY65Exi Vishay Telefun ken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

H24B2

Contextual Info: OPTOELECTRONICS H24B1 H24B2 PACKAGE DIMENSIONS 0.75 0.60 D + DESCRIPTION The H24B series consists of a gallium arsenide infrared em itting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing com patible with a dual in-line package.

VISHAY tk19

Abstract: tk19 tk19 200 phototransistor tk19
Contextual Info: CNY65Exi_ ViSM&Y Vishay Telefunken ▼ Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

H24A1

Abstract: H24A2 ST2006 ST4004 J279 ST2038
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS 0PTOELECTBOHICS H24A1 H24A2 PACKAGE DIMENSIONS DESCRIPTION The H24A series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a iow-cost plastic package with

CNY21Exi

Abstract: CNY21 Ex-90C JU100
Contextual Info: Temic CNY21Exi S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one ieadframe in

D291S

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 721 S C ø3,5± A 0,1 4875-0,2 Applikation: Freilaufdiode in Spannungszwischenkreisumrichter bis VD DC = 2000 V VWK January Schnelle Gleichrichterdiode Fast Diode D 721 S 45 T Elektrische Eigenschaften / Electrical properties

A1080-A

Abstract: D291S
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 721 S C ø3,5± A 0,1 4875-0,2 Applikation: Freilaufdiode in Spannungszwischenkreisumrichter bis VD DC = 2000 V VWK January Schnelle Gleichrichterdiode Fast Diode D 721 S 45 T Elektrische Eigenschaften / Electrical properties