DIODE GEX Search Results

Gex DIODE

Abstract: Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

GEX 51 DIODE

Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Area not flat o Cathode Diode Collector (Transistor) CO (O (O o X 0) GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

Contextual Info: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 0.6 0.4 5.7 5.1 29 27 Chip position Cathode Diode Collector (Transistor) fex06260 1.8 1.2 GEX06260

TRANSISTOR K 314

Abstract: GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758
Contextual Info: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA feo06652 .Neu: Area not flat 1.8 1.2 5.9 5.5 4.0 3.4 0.6 0.4 Chip position GEX06630 feof6652 29.5 27.5 Cathode Diode Collector (Transistor) 6.9 6.1 5.7 5.5

GEX06260

Abstract: Q62703-Q1031 Q62703-Q1819 Q62703-Q1820
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 0.6 0.4 5.7 5.1 Chip position GEX06260 fex06260 2.54 mm spacing 0.6 0.4 Approx. weight 0.5 g

transistor 495

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 5.9 5.5 0.6 0.4 GEX06971 Area not flat 5-9. 5.5 'M p ' 0.6 0.4 Cathode Diode GEX06630 Collector (Transistor) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

GEX06260

Abstract: Q62703-Q1031 Q62703-Q1819 Q62703-Q1820 OHR01882 transistor SR 51
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 0.6 0.4 5.7 5.1 Chip position GEX06260 fex06260 2.54 mm spacing 0.6 0.4 Approx. weight 0.5 g

Contextual Info: GEXM66 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current15m V(RRM)(V) Rep.Pk.Rev. Voltage5.0 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition)5.0m I(RM) Max.(A) Reverse Current50u @V(R) (V)(Test Condition)1.0

GEX06260

Abstract: Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Contextual Info: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 1.8 1.2 29 27 0.6 0.4 5.7 5.1 Chip position GEX06260 fexf6626 Cathode Diode Collector (Transistor)

Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)

80 ESP 12

Abstract: GEX06630 GEX06971 Q62702-P5054 Q62703-Q7891 OHF00329 transistor sr 61
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor SFH 313 SFH 313 FA New: Silicon NPN Phototransistor .O -'“ ’ Area not flat 9.0 5.9 5.5 0.6 0.4 5.1 Chip position Cathode Diode Collector (Transistor) GEX06260 M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.

Contextual Info: SIEMENS Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA CO CM Û O CO Area not flat 0.6 0 .4 Cathode (Diode Collector (Transistor) GEX06260 (O (O (O C\J Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

GDE 13a DIODE

Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient

bu 450 GDF

Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
Contextual Info: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

bu 450 GDF

Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
Contextual Info: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

bu 3 GDG 125

Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
Contextual Info: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

GEZ 44 A diode

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HR series SMCJ-HR Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HR High Reliability series is designed specifically to protect sensitive electronic equipment from

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HRA series SMCJ-HRA Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HRA High Reliability series is designed specifically to protect sensitive electronic equipment from

diode BFT 99

Abstract: Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor
Contextual Info: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

GEZ DIODES

Abstract: diode BFT 99 GFX DIODE GHM PF t54c 214B CD214C CD214C-T170A CD214C-T26A diode smc bfk
Contextual Info: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

SFH 910

Abstract: SFH 4332
Contextual Info: High Power VCSEL-Laserdiode 920 nm im 3 mm Radial-Gehäuse High-Power VCSEL Laser Diode (920 nm) in 3 mm Radial Package SFH 4332 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarotsendediode in VCSEL-(Vertical Cavity Surface Emitting Laser) Technologie