Q62702-P922
Abstract: foto transistor 850 nm LED Q62702-P1672
Contextual Info: SFH 214 SFH 214 FA SFH 214 SFH 214 FA feof6652 feo06652 Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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feof6652feo06652q62702-p922foto transistor+2850 nm ledq62702-p1672
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TRANSISTOR K 314
Abstract: foto transistor SFH 314 phototransistor 500-600 nm GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757
Contextual Info: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor Area not flat 6.9 6.1 5.7 5.5 5.9 5.5 1.8 1.2 29.5 27.5 Cathode Diode Collector (Transistor) ø5.1 ø4.8 0.8 0.4 2.54 mm spacing 0.6 0.4 SFH 314 SFH 314 FA feo06652 .Neu: 4.0
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feo06652gex06630feof6652ohf02340+11ohf02338ohf02342transistor k 314foto transistorsfh 314phototransistor 500-600 nmq62702-p1668q62702-p1675q62702-p1755q62702-p1756q62702-p1757
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datasheet mv 103
Abstract: fototransistor led P1189 sfh 300-2 GEO06652 Q62702-P1057 Q62702-P1058 Q62702-P1189 Q62702-P1192 Q62702-P1193
Contextual Info: .NPN-Silizium-Fototransistor SFH 300 SFH 300 FA Silicon NPN Phototransistor 1.3 1.0 1.8 1.2 Chip position 5.9 5.5 25.2 24.2 7.8 7.5 9.0 8.2 0.6 0.4 GEO06652 feof6652 Collector 11.6 11.2 4.5 4.2 ø5.1 1.0 0.7 0.6 0.4 2.54mm spacing Emitter feo06652 Area not flat
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geo06652feof6652feo06652iceo/iceo25o+10ipce/ipce25odatasheet mv 103fototransistor ledp1189sfh 300-2q62702-p1057q62702-p1058q62702-p1189q62702-p1192q62702-p1193
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SFH 314
Abstract: Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758
Contextual Info: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA feof6652 feo06652 .Neu: Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im
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feof6652feo06652sfh 314q62702-p1668+5q62702-p1675q62702-p1755q62702-p1756q62702-p1757q62702-p1758
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bp 103 fa
Abstract: foto transistor P1189 sfh 300-2 transistor bf 244 Q62702-P85-S3 Q62702-P85-S4 Q62702-P1057 Q62702-P1058 Q62702-P1189
Contextual Info: SFH 300 SFH 300 FA .NPN-Silizium-Fototransistor SFH 300 SFH 300 FA feof6652 feo06652 Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im
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feof6652feo06652iceo/iceo25oipce/ipce25o+10bp 103 fafoto transistorp1189sfh 300-2transistor bf 244q62702-p85-s3q62702-p85-s4q62702-p1057q62702-p1058q62702-p1189
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TRANSISTOR K 314
Abstract: GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758
Contextual Info: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA feo06652 .Neu: Area not flat 1.8 1.2 5.9 5.5 4.0 3.4 0.6 0.4 Chip position GEX06630 feof6652 29.5 27.5 Cathode Diode Collector (Transistor) 6.9 6.1 5.7 5.5
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feo06652gex06630feof6652ohf02340+9ohf02338ohf02342transistor k 314q62702-p1668q62702-p1675q62702-p1755q62702-p1756q62702-p1757q62702-p1758
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Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)
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gex06971gex06630ohf00328ohf00329+2ohf00330ohf00441
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80 ESP 12
Abstract: GEX06630 GEX06971 Q62702-P5054 Q62703-Q7891 OHF00329 transistor sr 61
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)
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fex06971gex06971feo06652gex06630+8ohf00328ohf00329ohf00330ohf0044180 esp 12q62702-p5054q62703-q7891transistor sr 61
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