DIODE FOOTPRINTS Search Results

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

Contextual Info: MSU277 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance 4. Micro Melf package, fits onto SOD 323/SOT 23 footprints Applications Band switching in VHF-tuners Construction Silicon epitaxial planar

MSU277

Contextual Info: MSU277 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance 4. Micro Melf package, fits onto SOD-323/SOT-23 footprints Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj=25℃

Contextual Info: MSU277 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance 4. Micro Melf package, fits onto SOD-323/SOT-23 footprints Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj=25℃

sod323 reflow

Abstract: low leakage tvs diode sod323 SD05C-01FTG
Contextual Info: TVS Diode Arrays SPA Devices General Purpose ESD Protection - SD05C Series SD05C Series 450W Discrete Bidirectional TVS Diode RoHS Pb GREEN The bidirectional SD05C TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05 Series SD05 Series 450W Discrete Unidirectional TVS Diode RoHS Pb GREEN Description The SD05 TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low speed and

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05C Series SD05C Series 450W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The bidirectional SD05C TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05 Series SD05 Series 450W Discrete Unidirectional TVS Diode RoHS Pb GREEN Description The SD05 TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low speed and

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05C Series SD05C Series 450W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The bidirectional SD05C TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05 Series SD05 Series 450W Discrete Unidirectional TVS Diode RoHS Pb GREEN Description The SD05 TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low speed and

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05C Series SD05C Series 450W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The bidirectional SD05C TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low

NTHD4N02F

Abstract: NTHD4N02FT1 NTHD4N02FT1G 5M MARKING CODE SCHOTTKY DIODE
Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals

Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals

Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals

MCL245

Contextual Info: MCL245 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Fast switching diode • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage VRM 250 V Mean Rectified Current

melf diode code

Abstract: MCL245 MELF Package
Contextual Info: MCL245 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Fast switching diode • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage VRM 250 V Mean Rectified Current

MCL245

Contextual Info: MCL245 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Fast switching diode • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage VRM 250 V Mean Rectified Current

Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 2.2 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • MOSFET Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals

sod323 reflow

Abstract: sd05
Contextual Info: TVS Diode Arrays SPA Devices General Purpose ESD Protection - SD05 Series SD05 Series 450W Discrete Unidirectional TVS Diode RoHS Pb GREEN The SD05 TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low speed and DC applications. It will protect any sensitive equipment

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

marking dp sot363

Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

2N301

Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair