DIODE EGP Search Results

Contextual Info: FAGOR a EGP50A. EGP50G 5 Amp. Glass Passivated Avalanche Ultrafast Diode Dimensions in mm. t D 0-201AD Plastic 11 Voltage 50 to 400 V. Current 5 A at 55 °C. O — 52.5 m in Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

EGP10D diode

Contextual Info: FAGOR EGP10A. EGP10G 1 Amp. Glass Passivated Avalanche Ultrafast Diode Dimensions in mm. DO-41 Plastic Voltage 50 to 400 V. Current 1 A at 55 °C. 58 .5 * 0 3 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.

EGP20B

Contextual Info: FAGOR EGP20A.EGP20G 2 Amp. Glass Passivated Avalanche Ultxaiast Diode Dimensions in mm. DO-15 Voltage 50 to 400 V P la stic Current 2 A at 55 °C. CO o « Ì 1 • 8 -$ ±0.3 Sfl.B min. • Glass Passivated Junction Mounting instructions 1. Min. distance from body to soldering point,

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

diode EGP 30

Abstract: diode bym 26 diode EGP 10 diode EGP fuf 5407 diode EGP 20 diode bym BYM 26 Diode case DO41 diode do-201
Contextual Info: KAGOR ^ U ltrafast Recovery Diode - Q uick Guide TYPE CURRENT FUF 4001 to FUF 4006 @ 55 °C EG P 10 A to E G P 10 G @ 5 5 °C E G P 20 A to EG P 20 G @ 5 5 °C FUF 5400 to FUF 5407 @ 55 °C EGP 30 A to E G P 30 G @ 5 5 °C E G P 50 A to E G P 50 G 1.0 A 1.0 A

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

FEP5dt

Abstract: 1N5614 smd gi1303 GI1301 FEP16GT N645
Contextual Info: GENL INSTR/ POUER 2SE D • 30*10137 DGG3331 T ■ FAST EFFICIENT RECTIFIERS continued 5.0 H (A) PKG TYPE c P20 64 6.0 T0-22CT CHIP G4 k > r 1Ì VRRM (volts) 1a l i l i 50 EGP50A. FE5A FEP5AT EFR5A GI1301 FE6A 100 EGP50B FE5B FEP5BT EFR5B Gl 1302 FE6B 150

Contextual Info: EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER

EGP50A

Contextual Info: EGP50A, EGP50B, EGP50C, EGP50D, EGP50F, EGP50G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction

Contextual Info: EGP20A, EGP20B, EGP20C, EGP20D, EGP20F, EGP20G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction

fagor fbu4 bridge rectifier

Abstract: diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A
Contextual Info: FA G O R^ End Applications AUTOMOTIVE END APPLICATION If DEVICES USED DEVICE TYPE ALTERNATOR 3A B Y250,1N 5400, 1N5620GP G eneral Purpose Rectifier POWER STEERING 3A GP30 AM BAG 1A 1N4000GP, ESI 5KP Transient V oltage Suppressor INSTRUMENT PANEL 5KW 1A GP10, FS1

ka3525 12v to 230v inverters circuit diagrams

Abstract: smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram
Contextual Info: AC/DC Switch Mode Power Supply Design Guide www.fairchildsemi.com AC/DC Switch Mode Power Supply Design Guide Table Of Contents Product Information Total

by250 diode

Abstract: diode RGP30 ultraFast Recovery Bridge Rectifier zener alternator rectifier zy zener rgp10 Diode rgp10 BA150 DIODES BY250 BY250
Contextual Info: End Applications AUTOMOTIVE END APPLICATION ALTERNATOR POWER STEERING AIR BAG IF 3A 3A 1A 5KW INSTRUMENT PANEL 1A DASHBOARD 1.5A 3A 1.3W, 2W 1.5KW, 5KW ABS SYSTEM 1A 1A, 1.5A 1.3W, 2W 400W÷ 5KW ANTI THEFT DEVICES 1A 1.3W, 2W 400W LIGHT CONTROL 1.3W ENGINE CONTROL

FSD210 dip-8

Abstract: VOGT EF20 48v 2.5a charger using uc3842 12v 5a charger using uc3842 KA5H0265RC 200V Zener Diode FSD210 KA5M0380R application note KA5L0380R. Application Zener C211
Contextual Info: FPS TM Fairchild’s Power Switch Analog Discrete Interface & Logic Optoelectronics For Switch Mode Power Supply Building Block Solutions for Multi-Market Applications Across the board. Around the world FPS ™ Design Guide Table Of Contents What is Fairchild Power Switch FPS™ .5

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

IRAC1152-350

Abstract: International Rectifier IRAC1152-350W CV507100BS TNY278PN TNY278PN HIGH POWER resistor HMR 5W SNX-1380
Contextual Info: 18 Feb 2011 Data Sheet No. PD97152 IRAC1152-350W Reference Design Kit for IR1152 Fixed 66kHz Frequency, One Cycle Control PFC IC with Brown-Out Protection Product Summary REFERENCE DESIGN KIT FEATURES • • • • • • • • • • IEC61000-3-2 Class D Standards Compliant

Santronics SNX 1380

Abstract: SNX-2468-1 Transformer Santronics
Contextual Info: 18 Feb 2011 Data Sheet No. PD97152 IRAC1152-350W Reference Design Kit for IR1152 Fixed 66kHz Frequency, One Cycle Control PFC IC with Brown-Out Protection Product Summary REFERENCE DESIGN KIT FEATURES • • • • • • • • • • IEC61000-3-2 Class D Standards Compliant