EGP10D Search Results

FUF5404

Abstract: DO-201AD FUF5407 FUF4005 FUF5406 Ultra-Fast Recovery Rectifiers FUF5402 byv26c BYV26E FUF4002
Contextual Info: QUICK GUIDE Ultrafast Recovery Rectifiers ULTRAFAST RECOVERY RECTIFIERS (AXIAL DEVICES) IF IFSM 50V 100V 200V 300V 400V 0.8A 25A EGP08A EGP08B EGP08D EGP08F* EGP08G* FUF4000 1A 30A FUF4001 FUF4002 FUF4003 FUF4004 FUF4005* EGP10 1A 30A EGP10A EGP10B EGP10D

Contextual Info: EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER

DO-204AL

Abstract: EGP10D JESD22-B102D J-STD-002B egp 100
Contextual Info: EGP10D Glass Passivated Junction Fast Efficient Rectifiers PRODUCT SUMMARY Reverse Voltage 50 to 400 Volts Forward Current 1.0 Ampere FEATURES Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage drop Low leakage current

J-STD-002

Abstract: DO-204AL EGP10A EGP10G
Contextual Info: EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time • Low forward voltage drop

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: MCC EGP10A THRU EGP10K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts Features • Glass passivated cavity-free junction, Plastic Case

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

EGP10B

Abstract: EGP10G
Contextual Info: EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • • • • • • • • ed* t n e Pat *Glass Encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306 DO-204AL DO-41

Contextual Info: New Product EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

EGP10D

Abstract: EGP10A EGP10B EGP10F EGP10G EGP10J EGP10K
Contextual Info: EGP10A THRU EGP10K Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • 1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts Superfast recovery time for high efficiency Glass passivated cavity-free junction, Plastic Case

EGP10B

Abstract: EGP10G
Contextual Info: EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C ed* t n e Pat *Glass Encapsulation technique is covered by

Contextual Info: EGP10A . EGP10J 1 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier Dimensions in mm. DO-41 Plastic Current 1.0 A at 55 °C ø0.8 ±0.05 ø2.6 ±0.1 Voltage 50 to 600 V R +0.2 5-0 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,

EGP10B

Abstract: EGP10G
Contextual Info: EGP10A thru EGP10G Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C ed* t n e Pat *Glass Encapsulation technique is covered by

DO-204AL

Abstract: EGP10
Contextual Info: EGP10AH THRU EGP10MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts TTEEDD N N E E T T A PPA Forward Current - 1.0 Ampere DO-204AL FEATURES * Halogen-free type 1.0 25.4 MIN. * GPRC (Glass Passivated Rectifier Chip) inside

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

EGP10J

Abstract: EGP10D
Contextual Info: MCC EGP10A THRU EGP10K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts Superfast recovery time for high efficiency