DIODE D7E Search Results

SGS30DA070D

Abstract: 57558 SGS30DA060D 19002D SGS30DA060 SGS30D
Contextual Info: S G S-THOilSON D7E D I TRANSPACK NPN POWER DARLINGTON 19001 m o dule APPLICATIONS: 7^237 These products are silicon NPN power dariingtons for industrial switching applications with three-phase mains operation. FAST FREEWHEEL DIODE ISOLATED POWER MODULE 30KVA - 375W

A4N48A

Abstract: 4N47A
Contextual Info: TEXAS INSTR {OPTO} □7E D | flìblTSb 007S13T 7 | 4N47A, 4N48A, 4N49A OPTOCOUPLERS T -H t-% 3 D3127, JU N E 1988 GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR • Both Input and Output Circuits are Isolated

ETC 529 DIODE

Abstract: devar Devar amplifier ERIE CAPACITORS red ERIE CAPACITORS 539-005-5 devar CAPACITORS ETC 529 capacitors erie #8 Ground Wire
Contextual Info: DEVAR INC/ C O N T R O L D7E D | S7TtiDflQ O D D I O ^ E □ | T-V/^6 7 DEVAR Inc. photo detector with amplifier typ e-539 INTRODUCTION _ Type 539 Optical Detectors are wide bandwidth 1 ight-to-voltage. converters spec­ ifically designed for fibre optic data links and instruments requiring fast res­

tda 2038

Abstract: tda 2023
Contextual Info: IGBT-Module BROUN/ABB SEMICON D7E D | 004fl30fl DOODEMD 3 | A S E A r- 3 3 - ^ 7 f t^ f ' p 500-600V ; : Spannung/Voltage ^ Typ/type VII 25-.G1 VII 50-.G1 VII 75-.G1 Kollektor-Emitter-Durchbruchspannung Collector-Emltter Breakdown Voltage V Br ces V 500

p217s

Abstract: p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C
Contextual Info: S G S-THOnSON D7E 1 73C 1 7 355 SGSP216/P2I7 1 SGSP316/P317 ] SGSP516/P517 ; HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V DGR V qs Id Idlm •! P.0« "^stg Tl o Q01?flSû 1 T 3 9 - / / N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate

D773

Abstract: P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SP369 SGSP469 sgsp468
Contextual Info: S G S -T H O M S O N SGSP368/P369 D7E D § T T ST H B ? 73C 17403 D 0D 17TQ ti û | “ SGSP468/P469 SGSP568/P569 : N_CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

diode sg 87

Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
Contextual Info: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate

5n06

Abstract: diode c335 5N05 SEFP5N05 SEFP5N06
Contextual Info: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D I: I, N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ^stg Ti

SGSP157

Contextual Info: S G S-THOîISON D7E » | 7 ^ 5 3 7 001704b S ,. « 73C 1 7 3 4 3 D 7— 3 f ' O / i SGSP157 j SGSPI58 . ] N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

Diode D7E

Abstract: sef220 SEF221
Contextual Info: 7^237 S G S-THOMSON D7E D 73C 17474 D 7^ 3 9 -/3 SEF220 SEF221 SEF222 SEF223 '•-i ?\ \\\ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

5n06

Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06
Contextual Info: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, SEFP5N05 SEFP5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field

C1537

Abstract: SEF830
Contextual Info: SG S- TH O n S O N D7E D 73C 17 5 50 7 i 5 c1537 D 0 1 Ô 0 S 3 fl 0 "TT 3 V -// N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

RF Power Transistors

Abstract: SEF420
Contextual Info: G S-T HOMSQN D7E D 73 C Ï749Q SEF420 SEF421 SEF422 SEF423 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ABSOLUTE M A X IM U M RATINGS

c2539

Abstract: sef831 SEF630
Contextual Info: p ’ v • » • rV iC 't f* S G S-THÖNSON D7E D | 7ciaci23? 0010033 2 J 3C 173 3Q D i N-GHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors.

3N35

Abstract: Diode D7E 2N45 SEFM2N45
Contextual Info: S G S-THOMSON D7E D 73C 17571 D ! . 'i SEFH2H45/SEFP2N45 SEFM3N33/SEFP3N35 s : SEFM3N40/SEFP3N40 7‘iEclS37 D01flQ74 h t HIGH SPEED SW ITCHIN G APPLICATIONS Iq m Ptot ^stg Ti - f R D S (ON •d 350/400V 3.3 Q 3 A Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 K f l)

p461

Abstract: P561 SGSP461 transistors C106 SGSP561 bv42 sgsp302
Contextual Info: S G S-TH O M SO N . ; D7E ; . 73C •* h I "■ SGSP361/P461/P561 ] ;A h SGSP302/P4B2/P562. : l , 1 j D g 17379 7^5^537 HIGH SPEED SWITCHING APPLICATIONS V DSS TO-220 SOT-93 TO-3 A B S O L U T E M A X IM U M R A T IN G S Drain-source voltage VGS = 0 Drain-gate voltage (RGS = 20KD )

SGSP256

Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
Contextual Info: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

Contextual Info: S G S-THOHSON D7E D | 7 ^ 5 3 7 O O lS b ö k I In t e g r a t e d n iR n i N TS PRELIMINARY DATA HC620 OCTAL BUS TRANSCEIVER INVERTING 3-STATE HC623 OCTAL BUS TRASCEIVÈR 3-STATE DESCRIPTIO N The M 54/74HC620/623 are high speed CM OS OC­ TAL BUS TRANSCEIVERS fabricated in silicon

sgsp221

Abstract: P522 SGSP522 P5-22 P322 SGSP321 SGSP421 SGSP321/P322
Contextual Info: S ' r f F • , , • ; % G r - - Z , k riI \ -■ S-THOMSON ? D7E D — -5J. 73C 17363 S0SP22I/P222 3 • SGSP321/P322 SGSP421/P422 ■> i • . ' These products are diffused multi-cell silicon gate N-Channel enhancem ent mode Pow er-M os field effect transistors.

Contextual Info: S G S-THOnSON D7E » I 7121237 0011,212 s I Î5 p ! ; f * r LOW POWER SCHOTTKY INTEGRATED CIRCUITS > v 1 67C 16421 t -6 6 -2 1 -5 1 D - QUAD 2-PORT REGISTER QUAD 2-INPUT M ULTIPLEXER W ITH STORAGE DESCRIPTIO N The T54LS298/T74LS298 is a Quad 2-Port Register.

T74LS

Abstract: LS645 LS640 LS641
Contextual Info: s G S-THOMSOn D7E D I Lüw P U W tK S U H U INTEGRATED CIRCUITS . _ 67C . 7^5^53? 001L3T? I ;T54LS640/641/645j I IKY D 16526 fl 7c- 5 ' 2 " 3 i PRELIMINARY DATA O CTAL BUS TRANSCEIVERS DESCRIPTION The T54LS/T74LS640/641/645 are octal bus tran­

T74LS155

Contextual Info: S G S-THONS ON D7E D I 7 ^ 2 3 7 DDlblOQ 3 I LOW POWER SCHOTTKY INTEGRATED CIRCUITS 6 T C - 1 6 2 2 9 . T -6 6 -2 1 -5 5 DUAL 1-OF-4 DECODER/DEMULTIPLEXER DESC RIPTIO N The TTL/MSI T54LS155/T74LS155 and T54LS156/ T74LS156 are high speed Dual 1-of-4 Decoder/De­

T0606

Contextual Info: S G S-THOHSÔN D7E D | 7 ^ 2 3 7 Mlfc.053 0 | LOW POWER SCHOTTKY INTEGRATED CIRCUITS '* - i 16151 D 7 ~ -V < £ -^ 7 -a 7 DUAL JK POSITIVE EDGE-TRIGGERED FLIP-FLOP DESCRIPTION The T54LS/T74LS109-109A consist of two high s£eed completely independent transition clocked

p239

Abstract: P238 diode P339 diode P339 SGSP338 P-239 INA723 P-139 sgsp238 SGSP138
Contextual Info: S G S-THOnSON D7E D | 7 ^ 2 3 7 DDl7fllS S r 73C 17312 SGSP138/P138 SGSP238/P239 SGSP338/P339 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field