DIODE D195 Search Results

ka968

Abstract: D1951SH65T fast diode
Contextual Info: Technische Information / Technical Information Schnelle Diode Fast Diode D1951SH65T S Zieldaten / Possible Data Features • Specially designed for snubberless operation • 140°C maximum junction temperature • Low losses, soft recovery • Electroactive passivation by a-C:H

D195

Abstract: D1956 D1952 herley attenuator D-1958 DIODE D195
Contextual Info: Herley: Series D195 Octave-Band Page 1 of 2 Defense Electronics> Microwave Products> Attenuators & Modulators Selection Guide View Printable Version Series D195 Octave-Band PIN Diode Attenuator/Modulators How to Buy Application Notes The Series D195 voltage-controlled linearized attenuator/modulators are integrated

D1952

Abstract: D1958 D1954 d1955 D195 D1956 D-1958 D1953
Contextual Info: Series D I95 Octave-Bond PIN Diode Attenuator/Modulators Witt's integrate:! :>ver$ SERIES D195 The Series D195 voltage-controlled linearized at­ tenuator/modulators are integrated assemblies con­ sisting of a Series 195 unit and a hybridized driver circuit which provides a nominal transfer function of

pin diode attenuator

Contextual Info: A tte n iin -if 1 ;• General Microwave PIN diode attenuators cover the frequency range from 200 MHz to 40 GHz and are available in numerous configurations to permit the user to optimize system performance. Most designs are available with either analog or digital control,

D1959

Contextual Info: Models 1959, D l959 Millimeter Wave PIN Diode Attenuator/Modulator MODEL 1959 The M odel 1959 is a current-controlled attenuator/ modulator that provides a minimum of 50 d B of attenuation over the frequency range of 18 to 40 G H z. A s shown in figure 1 below, the rf circuit uses two

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Oct 07,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 55@ V G S = 10V

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Dec 31,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

D1955NL

Abstract: D1955
Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

K4201

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)

2SK4201

Abstract: 2SK4201-S19 2SK42
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)

90n03

Abstract: NP90N03VUG NP90N03VUG-E1-AY DIODE MARKING code UG 45
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N03VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N03VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N03VUG-E1-AY NP90N03VUG-E2-AY

90n04

Abstract: NP90N04VUG 90n04 UG NP90N04V DIODE MARKING code UG 45
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N04VUG-E1-AY NP90N04VUG-E2-AY

90N055

Abstract: NP90N055 NP90N055VUG NP90N055VUG-E1-AY NP90N055VUG-E2-AY MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR DIODE MARKING code UG 45
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N055VUG-E1-AY NP90N055VUG-E2-AY

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

H9130H

Abstract: imt 9010 microwave associates isolator ferrite TRANSISTOR D1959 Schematic diagram of DRO attenuator 329-6-80 general microwave F9120 ups PURE SINE WAVE schematic diagram F9120AH M862B
Contextual Info: GENERAL ¥ ] MICROWAVE FULL LI NE C A T A L O G C O M P O N E N T S AND I N S T R U M E N T S Ordering Information 1. Please order by model number, option number where applicable , and product name. Telephone orders for standard catalog products will be accepted and

H9130H

Abstract: F9120AH F9114A F9120 schematic diagram online UPS art 400 military passive component General Microwave V6120 28001 transformer SP8T switch package ghz M864BH
Contextual Info: GENERAL Oscillators Full Line Componenf/MIC Catalog MICROWAVE Phase Shifters Ordering Information 1. Please order by model number, option number where applicable , and product name. Telephone orders for standard catalog products will be accepted and processed immediately. However, shipment cannot be made until a

TRANSISTOR D1960

Abstract: Eyal Microwave Industry OZ 9966 OZ 9938 dlva Radar Warning Receiver F9140AH fm MODULATOR 4046 SPA-X1-400 FR-2260-UK
Contextual Info: GENERAL MICROWAVE PRODUCT CATALOG Model Number Index .2 Product Index .5

2SK4212

Abstract: 2SK4212-ZK-E1-AY 2SK421 2SK4212-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4212 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

2SK4213

Abstract: 2SK421 2SK4213-ZK 2SK42 2sk4213-zk-e1-ay
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

2SK4201

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

90n03

Abstract: NP90N03VUG
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid