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    DESIGNING WITH FIELD EFFECT TRANSISTORS Search Results

    DESIGNING WITH FIELD EFFECT TRANSISTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    N0436N-ZK-E1-AY Renesas Electronics Corporation Power MOSFETs with Support for High-efficiency Drive and Low Heat Design Visit Renesas Electronics Corporation
    N0605N-S19-AY Renesas Electronics Corporation Power MOSFETs with Support for High-efficiency Drive and Low Heat Design Visit Renesas Electronics Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation