DIODE BAY 96 Search Results

mosfet 1200V 40A

Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
Contextual Info: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA

rxmb1

Abstract: RELAY RZ2 SUMMATION current transformer ABB rxtp 18 rxmd 2 current transformer ABB transformers of power station relay rd3 BUSBAR calculation datasheet relay 6 volt
Contextual Info: Bus differential relay using auxiliary summation CT’s REB 101 1-phase 1MRK 505 006-BEN Page 1 Issued: September 2006 Revision: C Data subject to change without notice SE970178 Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults

relay rd3

Abstract: RELAY RZ2 ABB transformer rxmb1 ABB rxtp 18 abb rxmb1 BUSBAR calculation datasheet REB103 RELAY RZ2 5 ABB RXTUG 22H
Contextual Info: Bus differential relay REB 103 3-phase 1MRK 505 007-BEN SE970146 Page 1 Issued: September 2006 Revision: C Data subject to change without notice Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults. • Very high E/F-sensitivity of the differential

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

HSB88AS

Contextual Info: HSB88AS Silicon Schottky Barrier Diode for High Speed Switching REJ03G0586-0100 Previous: ADE-208-964 Rev.1.00 Mar 31, 2005 Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HSB226S Silicon Schottky Barrier Diode for High Speed Switching REJ03G0591-0100 Previous: ADE-208-961 Rev.1.00 Apr 05, 2005 Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly.

WP91147L8BSR

Abstract: FLUKE 8060A Fluke 8060A service manual Fluke 8060A Multimeter calibration manual SHARP KS F102 TAG C7 Thyristor TRIACS EQUIVALENT LIST FLUKE 8060a manual FLUKE Clamp meter diagram J87132B-2
Contextual Info: Product Manual J87132B-2 Select Code 169-792-100 Comcode 107940108 Issue 3 March 1998 Lucent Technologies 140-Volt, 140-Ampere, 60-Hertz Ferroresonant Rectifier Notice: Every effort was made to ensure that the information in this document was complete and accurate at the time of printing.

Thyristor bst 2

Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
Contextual Info: CA3081, CA3082 CT UCT PRODU E T PROD E E L T O U S IT B SIL O ST -INTER E SU B 8 L 8 8 IB S 1 PO S onsData Sheet om FOR A tral Applicati @in tersil.c p n p e call C mail: centa or e General Purpose High Current NPN Transistor Arrays itle A30 , 308 bt enl rse

2SK3274

Abstract: 2SK3274STL-E PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: 2SK3274 L , 2SK3274 (S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0200 (Previous: ADE-208-960) Rev.2.00 Sep 07, 2005 Features • • • • Low on-resistance RDS (on) = 10 mΩ typ. 4.5 V gate drive device High speed switching Outline

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Laser Head for CD ROM

Abstract: 41F hall MPC 68020 laptop IDE CD-ROM connection cd rom laser diode Hard drive spindle driver optical head laser cd disk A 10089 X MAGNETIC card write head LASER PRINTER MIRROR MOTOR DRIVER
Contextual Info: CD-ROM drives/Optical drives/Optical media Introduction All computers, from mainframe to PCs, need nonvolatile memory; memory which is not lost when the machine is switched off, allowing data to be permanently or semi-permanently stored. This memory has, until recently, been almost exclusively based upon magnetic principles, resulting in the

450W atx power supply schematic diagram

Abstract: atx power supply 450W circuit diagram atx power supply 450W schematic atx 450w schematic schematic atx 2.03 P4 atx 450w scheme SC5200 450w power supply schematic diagram ATX 350W schematic diagram atx 650w schematic
Contextual Info: Intel SC5200 5U Server Chassis Kit Technical Product Specification Order Number: A99108-001 Revision 1.4 June, 2003 Enterprise Platforms and Services Marketing Revision History SC5200 5U Server Chassis TPS Revision History Date 5/16/02 Revision Number 0.9

Contextual Info: FSYC264D, FSYC264R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 34A, 250V, rDS ON = 0.080Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.

Contextual Info: FSYC260D, FSYC260R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS ON = 0.050Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.

Fiber-Bragg-Grating in EDWA

Abstract: HI1060 fibre pump laser UC974A UC960 Fiber Bragg Grating Fiber-Bragg-Grating UC960A UC980A 60825-1Edition
Contextual Info: Data sheet 980 nm Pump Laser Module, Un-cooled Features • Operating temperature range from 0°C to 70°C case • >120 mW linear power over full temperature range Bookham Technology’s UC9*A 980 nm Pump Laser Module is a break-through product enabling low-cost, highly reliable

FITEL FOL1402P

Abstract: mar 617 Thermistor bth 200 FOL1402PMI Fitel Technologies FOL FOL1402PLH IC 7402 EDFA 14xxnm FOL140
Contextual Info: Data Sheet FOL1402P Series Mar. 2010 1480 / 14xx-nm Pump Laser Diode Module High efficiency version Applications   Pump Source for Er-Doped Fiber Amplifier • C- and/or L-Band EDFA • Single Channel Amp to DWDM Amp Pump Source for Raman Amplifier Product Type : FOL1402P Series

Contextual Info: FSJ260D, FSJ260R TM Data Sheet December 2001 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs File Number Features • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs

a 3120 0532

Abstract: A 3120 0532 8 pin diode 30Vp DG308A DG308ACJ DG308ACY MS-001-BB
Contextual Info: P OS DG308A T CT DUC P R O P R OD U E T E E L T O U OBS UBSTIT 2 Data Sheet S 4 E 4 DG SIBL May 2001 Quad Monolithic SPST, CMOS Analog Switch itle G30 bt uad noic ST, OS a- The DG308A quad monolithic SPST, CMOS switch is latch proof and is designed to block signals up to 30VP-P when

ISOTM9001

Abstract: FiTel DFB Laser 1550nm PIN photodiode 7313 14Q7 15Q3 GR-468 Analog Photodiode, 1550nm, dfb laser diode 1310nm -1550nm to-can
Contextual Info: Data Sheet FOL1xxxYxA4x series Mar. 2010 DFB TO-CAN with aspherical lens cap Applications z Digital transmission up to 2.5Gbps z Analog transmission Descriptions z FOL1xxxYxA4x series is a DFB TO-CAN designed for digital and analog applications. z The module has a TO-CAN package with an aspherical lens cap, which contains a DFB

GS -L 0.1uF Capacitor

Abstract: Transistor lm324 lm324 pinout CA324 LM324N CA0324E CA124 CA0324 pdf of IC LM324 CA0124M
Contextual Info: NO 290 bad, Hz, raal plis , usl, ilis tho The CA124, CA224, CA324, LM324, and LM2902 consist of four independent, high-gain operational amplifiers on a single monolithic substrate. An on-chip capacitor in each of the amplifiers provides frequency compensation for unity

RSS090

Abstract: C158D158 lg r50 cpu schematic Preface Notebook Computer 37 TV samsung dvd Schematic circuit diagram samsung lcd tv power supply schematic 1400X GQ16 SB1717
Contextual Info: Preface Notebook Computer D500E/D510E/D520E/D530E Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

CA3046

Abstract: an5296 AN5296 application note AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 CA3046 equivalent AN5296 Application of the CA3018 Integrated CA3018 Monolithic Transistor Pair
Contextual Info: CA3046 Data Sheet May 2001 File Number 341.5 General Purpose NPN Transistor Array Features The CA3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially