CA3082 Search Results

vp 3082

Abstract: CA3082 CA3081 DR200 40736R CA3081F CA3081M CA3082M CA3082M96 DR2000
Contextual Info: CA3081, CA3082 Data Sheet November 1999 General Purpose High Current NPN Transistor Arrays • CA3081 - Common Emitter Array The CA3081 and CA3082 are capable of directly driving seven segment displays, and light emitting diode LED displays. These types are also well suited for a variety of

CA3081 RCA

Abstract: CA3082 RCA CA3081 CA308
Contextual Info: Arrays ÎH H A R R IS S E M I C O N D U C T O R RCA GE • C A 308 1, CA3082 INTERSIL M ay 1 9 9 0 General-Purpose High-Current N -P -N Transistor Arrays C A 3081 - C o m m o n -E m itter Array C A 3 0 8 2 - C o m m on -C o llecto r Array Directly Drive 7 -S e g m e n t Incandescent Displays and L ig h t-E m ittin g -D io d e LED Displays

vp 3082

Abstract: Common collector configuration transistor Common collector configuration transistor Common Base configuration CA3081 F16.3 Package CA3082 am 2716 data sheet decoder Ic led display board DR2000
Contextual Info: CA3081, CA3082 Data Sheet September 1998 File Number 480.4 General Purpose High Current NPN Transistor Arrays Features CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter

CA3062

Abstract: a3081 CA3081 A3082
Contextual Info: 23 C A 3081 CA3082 HARRIS General-Purpose High-Current N-P-N T ransistor Arrays August 1991 Features D escription • C A 3 0 8 1 - C o m m o n -E m itte r A rray C A3081 and C A 3 0 8 2 c o n s is t o f seven h ig h -c u rre n t to 100m A silicon n - p - n tra n sisto rs on a com m on m onolithic

Contextual Info: CA3081, CA3082 Semiconductor September 1998 General Purpose High Current NPN Transistor Arrays 480.4 Features • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter

vp 3082

Abstract: Common collector configuration HARRIS 3081 transistor Common collector configuration CA3081 CA3081 HARRIS CA3082 CA3082F RCA3081 CA3081F
Contextual Info: S E M I C O N D U C T O R CA3081, CA3082 General Purpose High Current NPN Transistor Arrays November 1996 Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic

CA3081

Abstract: ca3082 Common collector configuration
Contextual Info: HARRIS S E M I C O N D U C T O R CA3081, CA3082 General Purpose High Current N-P-N Transistor Arrays March 1993 Features Description • CA3081 - C o m m o n E m itter A rray CA30B1 and CA3082 consist of seven high current to 100mA silicon n-p-n transistors on a common monolithic substrate. The

Contextual Info: CA3082 Transistors Common Collector Transistor Array Number of Devices7 Type NPN/PNP V(BR)CEO (V)16 V(BR)CBO (V) I(C) Max. (A)100m P(D) Max. (W)750m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

CA3081

Abstract: vp 3082 transistor Common collector configuration 40736R CA3081F CA3081M CA3082 CA3082M CA3082M96 DR2000
Contextual Info: CA3081, CA3082 UCT PROD E PRODUCT E T E L T O B SO STITU er at E SUB upport Cen t sc L IB S /t POS al S il.com FOR A ou r Technic wData .intersSheet w t w c a IL or c ont NTERS 1-888-I General Purpose High Current NPN Transistor Arrays 480.6 • CA3081 - Common Emitter Array

ca3081

Abstract: 3082
Contextual Info: CA3081/3082-N DESCRIPTION PIN CONFIGURATIONS The CA3081 and CA3082 are m onolithic integrated circuits each consisting of seven separate npn transistors on a common sub­ strate. The transistors arecapableof driving loads up to 100mA. At the same time the

ca3082f

Abstract: transistor Common collector configuration CA3081 CA3082 CA3081 HARRIS DR2000 applications of ca3081 CA3081F CA3081M CA3081M96
Contextual Info: S E M I C O N D U C T O R CA3081, CA3082 General Purpose High Current N-P-N Transistor Arrays May 1994 March 1993 Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon n-p-n transistors on a common monolithic substrate. The

Thyristor bst 2

Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
Contextual Info: CA3081, CA3082 CT UCT PRODU E T PROD E E L T O U S IT B SIL O ST -INTER E SU B 8 L 8 8 IB S 1 PO S onsData Sheet om FOR A tral Applicati @in tersil.c p n p e call C mail: centa or e General Purpose High Current NPN Transistor Arrays itle A30 , 308 bt enl rse

vp 3082

Abstract: CA3081 Display device - Light Emitting Diode LED CA3082 Harris 3081 DR2000 DR2000 equivalent
Contextual Info: h a r CA3081, CA3082 ® S E M I C O N D U C T O R W General Purpose High Current NPN Transistor Arrays November 1996 Features Description • CA3081 - Common Emitter Array CA3081 and C A 3 08 2 co n sist o f seven high cu rre n t to 100m A silicon NPN transisto rs on a com m o n m on olithic

ca3081

Abstract: ca3082 common collector npn array transistor Common collector configuration F16 DIODE 3082
Contextual Info: 33 CA3081, CA3082 ^ «f ":.l! ; General Purpose High Current NPN Transistor Arrays " Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter

vp 3082

Abstract: CA3081 CA3082
Contextual Info: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter

vp 3082

Abstract: transistor Common collector configuration thyristor firing circuit Common collector configuration IC 4804 CA3082 CA3081 CA3081 HARRIS transistor Common Base configuration DR2000
Contextual Info: CA3081, CA3082 Semiconductor September 1998 File Number 480.4 General Purpose High Current NPN Transistor Arrays Features CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter

CA3084

Abstract: rca transistor transistor Common collector configuration CA3084 transistor common collector npn array CA3081 RCA numitron arrays 5 transistor dip.16 rca power transistor DR2000
Contextual Info: Transistor Arrays General-Purpose High-Current n -p -n Transistor Arrays G CA3081 CA3082 Applications and Features Drivers fo r: 7-segment incandescent displays e.g. RCA N U M IT R O N DR 2000 Series L ig h t-E m ittin g -D io de s (L E D ) displays (e.g. RCA 40736R )

CA3081

Abstract: CA3082 CA3081 HARRIS CA3081F transistor Common collector configuration DR2000 equivalent
Contextual Info: HA RR IS SEMICON] S E CT OR HARRIS S E M I C O N D U C T O R 4 3 0 2 27 1 O G H T D G l 276 blE D HAS CA3081, CA3082 General Purpose High Current N-P-N Transistor Arrays March 1993 Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA)

Contextual Info: CA3082N Transistors Common Collector Transistor Array Number of Devices7 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30Ž

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

L298D

Abstract: SAS251S4 ugn3013 SAS251 UCN4815A ULN3782M UDN2981LW uc3646 mc1417p CA1725E
Contextual Info: AMS-105 GENERAL INFORMATION SEMICONDUCTOR CROSS REFERENCE in Alpha-Numerical Order The suggested Allegro replacement devices are based on similarity as shown in currently published data. Exact replacement in all applications is not guaranteed and the user should compare the specifications of the competitive and recommended Allegro replacement. Special caution must be exercised in attempting to do a reverse cross. In some instances, the competitive device is obsolete; in

HIP9011ABR4682

Abstract: LM324N CDP65C51AE2 CA3262AER4374 CDP65C51M4S2357 HIP0050IP CDP68HC68R2E ISL706 CDP65C51M4 HAA2-10729
Contextual Info: Current list of products identified for obsolescence as a result of the Findlay plant closure Note: Product listing is subject to change or update 1. Life-of-type orders will be accepted through Friday, July 6, 2001 the withdrawal date). Additional orders will be considered through the end of September

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main