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    CA30B1 Datasheets Context Search

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    CA3081

    Abstract: ca3082 Common collector configuration
    Contextual Info: HARRIS S E M I C O N D U C T O R CA3081, CA3082 General Purpose High Current N-P-N Transistor Arrays March 1993 Features Description • CA3081 - C o m m o n E m itter A rray CA30B1 and CA3082 consist of seven high current to 100mA silicon n-p-n transistors on a common monolithic substrate. The


    OCR Scan     		ca3081ca3082ca30b1100ma+2ca30b2common collector configuration PDF

    vp 3082

    Abstract: CA3081 CA3082
    Contextual Info: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter


    OCR Scan     		ca3081ca3082100mavp 3082 PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n PDF