DIODE AVALANCHA Search Results

S3WB60Z

Contextual Info: . . . asm&mm sq i p Square In-line Package Bridge Diode 7 A ^> v x S 'f"? Avalancha type tnout/Output in-line Package O U T L IN E DIM ENSIONS S3WBDZ 600V 2.3A • RATINGS A bsolute Maximum R atin g s m i tin Item Symbol Operating Junction Temperature #A.mmw±

423R

Abstract: f423 IR 423
Contextual Info: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE

IR LFN

Abstract: LFN ir D0113 CJ10L 2N7225 IRFM250 2N7225 JANTX 024-S
Contextual Info: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM250 SN7SS5 JANTX2N7225 JANTXV2N72S5 N-CHANNEL REF: MIL-S-1S500/5B&] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International

DIODE S 43a

Abstract: IRF1010N
Contextual Info: PD - 9.1372A nternational I O R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

transistor 6cw

Abstract: 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier
Contextual Info: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS f IR H 7450 IR H 8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45ft, MEGA RAD HARD HEXFET international Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

Contextual Info: SIEMENS BUZ 70 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 70 60 V Id 12 A ^DS<on 0.15 £2 Package Ordering Code TO-220 AB C67078-S1334-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

diode BYW 66

Abstract: diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60
Contextual Info: S^C D I 7 ^ 2 3 7 S G S-THGMSON O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 0 2 2 4 0 f D ^ o î - n ^ HIGH EFFICIENCY

transistor S 8050

Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
Contextual Info: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY

24v rectifier j8

Abstract: irp740 IRF71Q
Contextual Info: International XQR Rectifier PO 9 .1 5 6 2 IRF9410 PRELIMINARY HEXFET Power M O S FET • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V pss = 30V

diode BYW 66

Abstract: by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 SFI6 te 02214 high efficiency fast recovery diode byw diode BYW
Contextual Info: S^C D t 7 C12C1237 G G G E E I G fc> S G S— T H O M S O N O T H O M S O N -C S F B V W DIVISION SEMICONDUCTEURS DISCRETS 7 5 _ B . Y — 2 _ _ _ W 7 1 5 A HIGH E FFIC IE N C Y FA ST R E C O V E R Y R E C T IF IE R S SUPERSWITCH R E D R E SS E U R S RA PID ES A H A U T REN D EM EN T

TRANSISTOR ED203

Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Contextual Info: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the

aval

Contextual Info: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT

dioda by 238

Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching

DM 321

Abstract: F320 IRFF320 IRFF321 IRFF322 IRFF323
Contextual Info: 1ÛE-D SILICONIX INC Û254735 0014017 4 • IRFF320/321/322/323 • □ r"StlÌCG S ilic o n_ ix J lM ■ in ii c o rp o ra te d N-Channel Enhancement Mode Transistors T - 3 R -O ^ TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF320 " V Id (A

k 3919

Abstract: IRFF9230 IRFF9231 IRFF9232 IRFF9233 9231 TU300
Contextual Info: SILICONIX INC l&E D « T"Sificor Siliconix J L M • Ö254735 0014Ö45 T ■ 1RFF9230/9231 /Ö232/9233 iiincorporated P-Channel Enhancement Mode Transistors TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS • d S(ON (ft) Id (A) IRFF9230 -200 0.8

marking code KC SMB

Abstract: SMBJ25A marking NX TVS DO-214AA smbj0 SMBJ23 SJ 76 TVS dIODE diode GU do-214aA DIODE UF marking code smb marking mp SMBJ12A
Contextual Info: TAIWAN SEMICONDUCTOR SMBJ SERIES 600 Watts Surface Mount Transient Voltage Suppressor S MB/DO-214A A RoHS COM PLIANCE Features_ «• For su rfa ce m ou n te d a p p lica tio n <■ L o w p ro file p a c k a g e B u ilt-in s tra in r e lie f

50n05

Abstract: SMP50N05 SMP60N05 s0n06 smp60n06 60n05 SMP50N06 60N06 50n06 siliconix SMP50N06-18
Contextual Info: lêE I SILICONIX INC <MmW C rS • 8254735 0014173 7 ■ SMP60N06/05, SMP50N06/05 ilì c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BRJDSS SMP60N06 60 0.023 60 SMP60N05 50 0.023 60 SMP50N06

DIODE 1334 smd

Abstract: TH 2267 HA 13164 B0139 smd diode 1334
Contextual Info: PD-2.178A International Rectifier L io R j i s t . s e r i e s q 18 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics 18TQ. Units lF AV Rectangular waveform 18 A 35 to 45 V VRRM ‘fsm 1P " 5 M#*ne 1800

1653A

Abstract: 1655A transformador corriente de 110 a 24 volts transformador transformador corriente de 110 a 36 volts
Contextual Info: INSTRUCTION MANUAL MANUAL DE INSTRUCCIÓN MODELS 1653A & 1655A MODELOS 1653A & 1655A Isolated-Variable AC POWER SUPPLY Aislada, variable FUENTE DE PODER DE AC TEST INSTRUMENT SAFETY WARNING An electrical shock causing 10 milliamps of current to pass through the heart will stop most human heartbeats. Voltage as low as 35