DIODE 77A Search Results

NDL7601P1C

Abstract: L7601 NDL7601 NDL7601P NDL7601PD
Contextual Info: h PRELIMINARY DATA SHEET LASER DIODE NDL7601P Series 1 310 nm OPTICAL FIBER COMMUNICATIONS InG aA sP MQW-DFB LASER DIODE COAXIAL M ODULE DESCRIPTIO N N D L7601P S eries are 1 310 nm DFB Distributed Feed-Back laser diode coaxial package modules with sin glem ode fiber. N ew ly developed M ultiple Quantum W ell (MQW) stucture is adopted to achieve stable dynam ic

Contextual Info: P D - 917 0 5 International l R Rectifier IRF7322D1 PRELIMINARY FETKY MOSFET/ Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low V F Schottky Rectifier Generation 5 Technology

Contextual Info: -«*«$r<7r—K Rectifier Diode Single Diode • OUTLINE DIMENSIONS Case : 2F Type D2FD U n it I ! ‘ 600V 1.4A u Ä • Cathode m ark 1 \ > 4c 3 c s a u _ Q 3 QQ c s iiT 'T r£ f? ^1 o _ * ii^ * 2.5^ 6.1 LD vj-ieiM W J T y p e No. / 77A C la s s D a te code

schottky diode 100A

Abstract: HEXFET SO-8 Schottky Diode 50V 3A IRF7322D1
Contextual Info: PD- 91705 IRF7322D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint

IRF7321D2

Abstract: SiC POWER MOSFET
Contextual Info: PD - 91667B IRF7321D2 PRELIMINARY TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFETÒ Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFETÒ Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1

ed 77A DIODE

Abstract: IRF7322D1
Contextual Info: PD- 91705A IRF7322D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

Contextual Info: PD - 95297 IRF7321D2PbF TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free Description

IRF7807D1

Contextual Info: PD - 95297 IRF7321D2PbF TM Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free Description FETKY MOSFET & Schottky Diode

Contextual Info: PD - 95298 IRF7322D1PbF FETKYä MOSFET / Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free A A

IRF7807D1

Contextual Info: PD - 95298 IRF7322D1PbF FETKYä MOSFET / Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free A 1

IRF7321D2

Abstract: ed 77A DIODE
Contextual Info: PD- 91667C IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K

Contextual Info: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7

IRF7322D1

Abstract: IRF7807D1 MS-012AA
Contextual Info: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7

IRF7321D2

Contextual Info: PD- 91667D IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery

50V 60A MOSFET

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MOSFET 600v 60a MIC4452
Contextual Info: APT77H60J 600V, 77A, 0.065Ω Max, trr ≤300ns N-Channel Ultrafast Recovery FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for maximum reliability in ZVS phase shifted bridge and other circuits through much reduced

BUK657-400B

Contextual Info: PHILIPS INTERNATIONAL bSE D m 711035b 00b43Sl 3 55 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

BUK657-500B

Abstract: T0220AB transistor D 587
Contextual Info: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

APT55M50JFLL

Contextual Info: APT55M50JFLL 550V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

APT55M50JFLL

Contextual Info: APT55M50JFLL 550V POWER MOS 7 R FREDFET VDSS ID S 27 2 T- D G SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel

SC4M

Contextual Info: S /a - y M f — n w r 3 H ': * — K Schottky Barrier Diode R e ctifie r Module • W ß - r JÜ B l O U T L IN E D240SC4M D IM E N S IO N S 3-M 4 nuts 40V 240A □2 40 SC 4M 20 .1 ■ fë fà m I Unit i R A T IN G S ÎÊ ÎÎÜ f ^ / È f ê A b s o lu te Maximum R a tin g s

Contextual Info: APT50M60L2VFR 500V 0.060Ω 77A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®