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    BUK657-400B

    Contextual Info: PHILIPS INTERNATIONAL bSE D m 711035b 00b43Sl 3 55 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		711035b00b43slbuk657-400b-t0220ab PDF

    TRANSISTOR 434

    Abstract: BUK856-450IX mj power transistor IEC134 T0220AB
    Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b QQL.M347 Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT PARAMETER MIN. TYP. MAX. UNIT V CL CER VcEsat Ic Ptot Ecers Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC)


    OCR Scan     		7110fistbuk856-450ixt0220abtransistor 434+2mj power transistoriec134 PDF