DIODE 5818 Search Results

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Zener Diode 4148

Abstract: zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23
Contextual Info: 02 &J 02E 00432 1989963 CENTRAL SEMICONDUCTOR 0Q00435 pe| 7 | T -2 3 ~ 0 $ - SMD WÊÈÊSSÊÊiÊÊÈâm eentsvsi ssmieonsBwefior sepp. Centres! gs^ ieoiï^ yetai”e@rp. Sx •‘¿¿ri6 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80

schottky diode FIT

Abstract: 74621 diode 5818 FIT rate failure rate
Contextual Info: Silicon Technology Reliability Vishay Siliconix SKYFET N-CHANNEL MOSFET AND SCHOTTKY DIODE ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 5818 1 264 846 965 0.719 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V/1.0A SCD5817H THRU SCD5819H FEATURES OUTLINE DIMENSIONS Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency

Contextual Info: AMS-173-4 Product Selection Guide HIGH-VOLTAGE ≥60 V PERIPHERAL POWER AND DISPLAY DRIVERS IN ORDER OF 1) OUTPUT VOLTAGE, 2) OUTPUT CURRENT, 3) NUMBER OF DRIVERS Output Ratings* Serial Input Latched Drivers Features Diode Saturated Internal Clamp Outputs Protection

5810-F

Abstract: 5812-F 5818-F
Contextual Info: AMS-173-4 Product Selection Guide HIGH-VOLTAGE ≥60 V PERIPHERAL POWER AND DISPLAY DRIVERS IN ORDER OF 1) OUTPUT VOLTAGE, 2) OUTPUT CURRENT, 3) NUMBER OF DRIVERS Output Ratings* Serial Input Latched Drivers Features Diode Saturated Internal Clamp Outputs Protection

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V/1.0A SCD5817H THRU SCD5819H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V/1.0A SCD5817H THRU SCD5819H FEATURES OUTLINE DIMENSIONS Halogen - free type Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency

diode 5819

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V/1.0A SCD5817H THRU SCD5819H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency

Contextual Info: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A xial Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,

MBR140P

Abstract: mbr130p MBR120P BR115P MBR115P 1N5817-19 J581 5819m
Contextual Info: 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA A X I A L LEAD RECTIF IERS . . . em ploying the S c h o ttk y Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry construction w ith oxide SCH OTTKY BARRIE R

Contextual Info: AMS-173-3 Product Selection Guide POWER SOURCE DRIVERS IN ORDER OF 1 OUTPUT CURRENT, 2) OUTPUT VOLTAGE, 3) NUMBER OF DRIVERS Output Ratings * mA -25 V 60 60 60 # 8 10 12 60 60 20 32 Serial Input — X X X X Features Latched Diode Saturated Drivers Clamp Outputs

5810-F

Abstract: 5812-F 5818-F
Contextual Info: AMS-173-3 Product Selection Guide POWER SOURCE DRIVERS IN ORDER OF 1 OUTPUT CURRENT, 2) OUTPUT VOLTAGE, 3) NUMBER OF DRIVERS Output Ratings * mA -25 V 60 60 60 # 8 10 12 60 60 20 32 Serial Input – X X X X Features Latched Diode Saturated Drivers Clamp Outputs

2068 dd

Abstract: 6811 6A259 6A595 6B259 6B273 6B595
Contextual Info: ALLEGRO POWER INTERFACE APPLICATION GUIDE LED DISPLAY DRIVERS Io Abs Max Vo OUTPUTS SINK/ SOURCE DIODE CLAMP LATCHED DRIVERS SERIAL INPUT r DS on PACKAGE DEVICE 90 mA 90 mA 100 mA 100 mA 100 mA 150mA 150 mA 150 mA 150 mA 350 mA 120 mA 350 mA 17 V 17 V 20 V

2SD 4206

Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

TRANSISTOR SMD 613

Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)

darlington array

Abstract: sourcing darlington array GP-016 ULN7003A cmos logic ic number 4000 EP 7003 BSC 27 flyback
Contextual Info: 7003 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Dwg. No. A-9594 Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A is designed for interfacing between TTL or CMOS logic and a variety of peripheral loads. The

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

ph 4148 diode

Abstract: Diode ph 4148 diode f 4148 Diode PH 13D s130 diode pj 77 diode pj 33 DIODE PJ 57 PJ 74 DIODE
Contextual Info: ANALO G DEVICES Micropower Low Cost Fixed 3.3 V, 5 V, 12 V and Adjustable DC-to- DCConverter ADP1109A FEATURES Operates at Supply Voltages 2 V to 9 V Fixed 3.3 V, 5 V, 12 V and Adjustable O utput M inim um External Com ponents Required Ground Current: 460 |jlA

1N4148 signal diode

Abstract: P11091 bat54 ms dam
Contextual Info: A N A LO G D EVIC ES Micropovuer Low Cost Fixed 3.3 V, 5 V, 12 V and Adjustable DC-to- DC Converter ADP1109 FEATURES Operates at Supply Voltages 2 V to 12 V Fixed 3.3 V, 5 V, 12 V and A djustable O utput M inim um External Com ponents Required Ground Current: 3 2 0 |jlA

Contextual Info: ANALO G D E V IC E S Micropower, Step-Up/Step-Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V ADP1110 FEATURES Operates at Supply V oltages From 1.0 V to 30 V Step-U p or Step-Dow n Mode M inim al External Components Required Low -Battery Detector

sourcing darlington array

Abstract: ULN7003A ULN7003LW darlington array ULN7003
Contextual Info: Data Sheet 29304.10A 7003 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A AND ULN7003LW are designed for interfacing between TTL or CMOS logic and a variety of

GP 015 DIODE

Abstract: ULN7003A ULN7003LW
Contextual Info: Data Sheet 29304.10A 7003 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A AND ULN7003LW are designed for interfacing between TTL or CMOS logic and a variety of