DIODE 512 Search Results

zd1 1014

Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky

Contextual Info: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

RHR15120

Abstract: RHR15120 fairchild make DIODE RHR15120 RHR15120 datasheet RHRP15120 TA49098
Contextual Info: RHRP15120 Data Sheet January 2000 File Number 3677.2 15A, 1200V Hyperfast Diode Features Title HR 512 The RHRP15120 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

RURG75120

Contextual Info: RURG75120 Data Sheet January 2000 File Number 3412.3 75A, 1200V Ultrafast Diode Features Title UR 512 The RURG75120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

tyco mil relay

Abstract: To5 transistor header Transistor 187 terminal configuration Mil-R-39016 TRANSISTOR 287 A
Contextual Info: 1MA 1MAD 1MADD 1MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ 1MA 1MAD 1MADD 1MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE

1842m

Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Contextual Info: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser

DIODE 4d

Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
Contextual Info: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser

A 3150 igbt driver

Abstract: IR E78996 IRF E78996 ECONO2-6PACK IGBT module ir igbt 1200V 40A igbt qualification circuit E78996 IR GB25XF120K
Contextual Info: PD - 94569 GB25XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient

RHR15120

Abstract: RHR15120C RHRG15120CC TA49098
Contextual Info: RHRG15120CC Data Sheet Title HR 512 C bt A, 00V pert al ode) utho rpoon, pert al ode, ache File Number 3686.2 15A, 1200V Hyperfast Dual Diode Features The RHRG15120CC is a hyperfast dual diode with soft recovery characteristics trr < 65ns). It has half the recovery

RHRG75120

Contextual Info: RHRG75120 Data Sheet Title HR 512 bt A, 00V pert ode utho eyrds A, 00V pert ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 3414.3 75A, 1200V Hyperfast Diode Features The RHRG75120 is a hyperfast diode with soft recovery

nec d 588

Abstract: PX10160E
Contextual Info: DATA SHEET LASER DIODE NX8517XC Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8517XC is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

NX7314UA

Abstract: NX7315UA NX7312UA NX7313UA NX8310UA NX8311UD NX8510UD STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8510UD Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8510UD is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

BFY 99

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8508 BFY10
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an

NX8501

Abstract: NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501CC 25TC
Contextual Info: DATA SHEET LASER DIODE NX8501 Series 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation

nec d 588

Abstract: NEC DIODE LASER PS2001
Contextual Info: DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

NX5501

Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

BC237

Abstract: sot23 transistor marking JY
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel

a7840

Abstract: fdfs6n303
Contextual Info: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor’s FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and

Contextual Info: DSA30C45PC advanced Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number Backside: cathode 1 Features / Advantages: Very low Vf Extremely low switching losses low Irm values Improved thermal behaviour

SO8 package fairchild

Abstract: fd303 f852
Contextual Info: August 1999 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE

WLD3343

Abstract: WTW002 1k trimpot vertical LM4040 WHS302 WHS320 WHY5640
Contextual Info: WLD3343 General Purpose Driver for Laser Diodes Pb FEATURES: GENERAL DESCRIPTION: The WLD3343 is an easy-to-use analog circuit for space contstrained, high-power laser diode applications. The WLD3343 maintains precision laser diode current constant current mode