DIODE 500V 10A Search Results

B20NM50FD

Abstract: P20NM50FD F20NM50D P20NM50 STP20NM50FD B20NM50 STB20NM50FD STF20NM50D ZVS phase-shift converters
Contextual Info: STP20NM50FD STF20NM50D - STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/TO-220FP/D2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STF20NM50D STB20NM50FD 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC

PJ 969 diode

Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Contextual Info: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode

Contextual Info: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

TO220I

Abstract: STP20NM50FD
Contextual Info: STP20NM50FD STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/I PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

STB20NM50FD-1

Abstract: SD20A STP20NM50FD
Contextual Info: Q * Be R t s g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A

S-1380

Abstract: STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters
Contextual Info: Q * Be R t s g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A

P20NM50FD

Abstract: B20NM50FD P20NM50 STP20NM50FD B20NM50FD-1 STB20NM50FD-1 ZVS phase-shift converters
Contextual Info: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22Ω

S-1380

Abstract: STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters 836 DIODE current
Contextual Info: Q * B • ■ ■ ■ ■ ■ R t es g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS R DS(on) R ds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC

Contextual Info: KSM10N50CF/KSMF10N50CF 500V N-Channel MOSFET Features TO-220F TO-220 • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode

G20N50c

Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Contextual Info: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance

ZVS phase-shift converters

Abstract: STB20NM50FD
Contextual Info: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

STB20NM50FD

Abstract: ZVS phase-shift converters
Contextual Info: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

G20N50c

Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
Contextual Info: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE

S-1380

Abstract: STW20NM50FD ZVS phase-shift converters
Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

S-1380

Abstract: STW20NM50FD ZVS phase-shift converters
Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

IXFN64N50PD2

Abstract: 64N50P SOT227B package 64N50
Contextual Info: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ

IXFN64N50PD2

Abstract: IXFN64N50PD3
Contextual Info: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A   85m  200ns

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN64N50PD2 IXFN64N50PD3 RDS on Boost & Buck Configurations (Ultra-fast FRED Diode) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ

mosfet 500v 10A

Abstract: diode 500v 10A mosfet 10a 500v power diode 500v 10A 2SK1278
Contextual Info: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Contextual Info: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit