DIODE 344 BT Search Results

DIODE vn SMD

Contextual Info: bbS3^31 005b3fl7 7SS MARX Philips Semiconductors Preliminary specification BB131 VHF variable capacitance diode N AHLR PHILIPS/DISCRETE DESCRIPTION bTE D — • QUICK REFERENCE DATA The BB131 is a silicon variable capacitance diode in planar technology, intended for use as a

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSBTBl DD2fib03 344 H A P X ESM4045A V ESM4045D(V) ; v SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended for use in motor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

Philips MBB

Abstract: BB804
Contextual Info: • btiSa'ïHl 0 0 2 4 4 1 ? 40û H I A P X N AMER P H I L I P S / D I S C R E T E BB804 b?E ]> VHF VARIABLE CAPACITANCE DOUBLE DIODE The BB804 is a variable capacitance d ouble diode in planar te ch no lo g y w ith com m on cathode in a plastic SO T23 envelope. I t is intended fo r FM tu n in g especially fo r car radios.

Contextual Info: N AMER PHILIPS/DISCRETE bTE D L.b53T31 003Db4S 473 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

1FW smd

Abstract: SMD 1FW 1FW 55 1FW 14 smd 1FW 75 1FW 85 1FW 29 BTS100 1FW 60 smd code 12.00 Jn
Contextual Info: SIEMENS Smart Highside Power Switch TEMPFET Features • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type Vos h BTS 100 -5 0 V -8 A ^DS<on 0.3 £2 Package Ordering Code

Contextual Info: DH aHBSbOS 00Ö1403 241 SIEMENS PROFET BTS 432 D2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 V'Load dump Clamp of negative voltage at output 58 Vbb- V 'o u t Avalanche Clamp

BTS 432 D2 smd

Abstract: 432d2 POWER SUPPLY BTS SIEMENS 432I2 siemens scr scr siemens
Contextual Info: SIEMENS PROFET BTS 432 D2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 H o a d dump Clamp ot negative voltage at output 58 Vbb-VouT A v a la n c h e C la m p

BTS100

Contextual Info: SIEMENS Smart Highside Power Switch TEMPFET BTS 100 Features • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type V„s /d ^DS on Package Ordering Code

BUK455-100A

Abstract: BUK455 100-C BUK455-100B T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE bTE D • L.b53T31 0D3DL>i45 473 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

4 pin hall effect dC motor

Abstract: IC 555 control motor brushless hall device 810 gd114 DC MOTOR DRIVER Hall 221 718 mx diode diode zener 718 motor driver ic
Contextual Info: Advance Data Sheet February 1994 M A T bT Microelectronics ATT2133AAP Off-Line Brushless dc Motor Driver IC Features Description • Direct ac-to-dc conversion The ATT2133AAP is designed to provide complete control and drive to run a brushless dc motor directly

7500B

Abstract: BB49 IF-20 PL000 4j13
Contextual Info: OPTEK TECHNOLOGY INC DbE D | bT^fiSflD D 0 D D 4 4 0 fl | O p to e le c tr o n ic s D iv is io n T R W Electronic Components Group i ^ H F Product Bulletin PL0QQ3 September 198 6 “^ T T *-/ / — / ' 3 Miniature Reflective Object Sensor Type 0PM101 -.1 7 3 4 40 —

TCA160

Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;

Contextual Info: Application Guide A A a ● Abbreviation of: ● atto quintillionth , 10-18 ● area ● acceleration ac (AC) ● alternating current ● activated carbon ASCII ● American Standard Code for Information Interchange ASIC ● all purpose symbolic instruction code

smd transistor s71

Abstract: BTS410F e3040 410D C67078-S5305-A5 power transistor GPT051S6 s71 smd zener diode BTS41OF C67078-S5303-A21
Contextual Info: SIEMENS BTS410F PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection 1)

1SS97

Contextual Info: POIiJEREX INC 3^ E D 75^4^21 IPRX 00G 415b b m/HEHBX 3 3 '- 2 £ ^ KD224505HB Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 1SS97 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107,72003 Le Mans, France (43)41.14.14 High-Beta Dual Darlington

LT 0216 diode

Contextual Info: SGS-THOMSON MDS50 RiilD @lS il[L[l(gT[S©liD©i DIODE / THYRISTOR MODULE FEATURES • VDr m =V rrm UP TO 1200 V = 35A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(rmS ■ It(AV) DESCRIPTION The MDS50 family are constitued of one rectifier

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

diode 6t6

Abstract: 1N4752A 1N4732A ln4744a 1N4728A 1N4729A 1N4730A 1N4731A 1N4733A 1N4734A
Contextual Info: S e m i c o n d u c t o r " - 1N4752A 1N4728A - 1 N4752A Series One Watt Zeners Tolerance: A = 5% TA = 25°C unless otherwise noted Parameter Value Units -65 to +200 Maximum Junction Operating Temperature + 200 Lead Temperature 1/16" from case for 10 seconds

Contextual Info: • fl23Sb05 0 0 * 1 3 01 6 Sb^ ■ SIEMENS PROFET BTS 621 L1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 400W S ER IES TVS DIO DES / DO-41 CASE 7 4 0 0 W £ ?«J Breakdown Voltage P4KE6.8 P4KE6.8A P4KE7.5 P4KE7.5A P4KE8.2 P4KE8.2A P4KE9.1 P4KE9.1 A P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A P4KE16

Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS ^ 600W SERIES TVS DIODES / 'S i ^ Is DO-214AA CASE 3 600W $ ?>] mm Breakdown Voltage V br TYPE P6FMBJ6.8 P6FMBJ6.8A P6FMBJ7.5 P6FMBJ7.5A P6FMBJ8.2 P6FMBJ8.2A P6FMBJ9.1 P6FMBJ9.1A P6FMBJ10 P6FMBJ10A P6FMBJ11 P6FMBJ11A P6FMBJ12

JD225005

Abstract: transistor c 3927 JD224505 ZD 103 ma BP107 vdo x10 VQS-15V
Contextual Info: P Ol i l E RE X m m 3=1E D INC a t M 7STMtiSl GG0MS12 S IPRX JD224505 JD2250Q5 K Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual FETMOD

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

N6LG

Abstract: 369D NTD18N06L NTD18N06LG NTD18N06LT4 NTD18N06LT4G DS835B 18N6L 18n6lg
Contextual Info: NTD18N06L Power MOSFET 18 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com V BR DSS Features • Pb−Free Packages are Available