DIODE 31DQ Search Results

pn junction diode structure

Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Contextual Info: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

Contextual Info: SCHOTTKY BARRIER DIODE 3.3a /9o ~ 31DQ09 31DQ10 ioov FEATURES ° Low Forward Voltage Drop 5 Low Power Loss, High Efficiency ° High Surge Capability 30 Volts through 100 Volts Types Available MAXIMUM R A T IN G S \ type Voltage Rating ♦31DQ09 31DQ10 Unit

31DQ09

Abstract: 31DQ10
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ09 31DQ10 3.3A/90~100V FEA TU RES ° Low Forward Voltage Drop • Low Power Loss, High Efficiency ° High Surge Capability "30 Volts through 100 Volts Types Available MAXIMUM RA TING S Voltage Rating \ type Symbol\. ♦31DQ09 31DQ 10

Diode 31DQ06

Contextual Info: SCHOTTKY BARRIER DIODE 3.3A/50— 60V 31DQ05 31DQ06 FEA TU R E S ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available MAXIMUM RATING S \ tïpe Voltage Rating ♦ 31DQ05 31DQ06

Contextual Info: SCHOTTKY BARRIER DIODE 310Q03 31DQ04 3.3A/30— 40A FEATURES ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available MAXIMUM R A T IN G S Voltage Rating " \ type ♦ 3 1DQ0 3 31DQ04

Contextual Info: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATU RES ° Low Forward Voltage Drop 5.^.23 DIA - m . • Low Power Loss, High Efficiency 1.50059) » 1.30O51) ° High Surge Capability n 21 .83) MIN 30 Volts through 100 Volts Types Available 10(.39)

Diode 31DQ04

Abstract: 31DQ04 31DQ03 4vua
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a / 3 0 ~ 4 0 a FEATURES ° Low Forward Voltage Drop 5.8^.23 DIA ' Low Power Loss, High Efficiency 1.5 .059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available 10(.39) MAX

Contextual Info: SCHOTTKY BARRIER DIODE 31DQ09 31DQ10 3.3A/90~100V FEATURES ° Low Forward Voltage Drop 5.8 .23 DIA • Low Power Loss, High Efficiency 1.5(.059)nT. ° High Surge Capability 1.3(.05l) »30 Volts through 100 Volts Types Available 21(.83) MIN 10(.39) MAX 1.5(.059)nT,

Contextual Info: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a /3 0 ~ 4 0 a FEA TU RES ► - 5.8 .23)DIA ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency n +[ 1.5(.059) r>, a |¡ 1.3^.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available

Diode 31DQ06

Abstract: Diode 31DQ05 31DQ05 31DQ06 BACR
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATURES ° Low Forward Voltage Drop 5.^.23 D IA ° Low Power L o s s , High Efficiency 1.5 .059) n l . 1.3(.051) ° High Surge Capability 21(.83) MIN 30 Volts through 100 Volts Types Available *Ü 1.5(.059) T-.T »

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Contextual Info: SCHOTTKY BARRIER DIODE s a /sov 3 1D Q 0 3 L FEATURES OLow Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability MAXIMUM RATINGS \ T y p e 31DQ03L V oltage R ating Unit S y m b o f\ Repetitive P eak R everse V oltage V RRM 30 V N on-Repetitive Peak Reverse

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

jointal Z

Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
Contextual Info: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

251C

Abstract: 31DQ03L diode SS 3
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ03L 3A/30V \ F E A T U R ES A O L ow F o rw a rd V o ltag e D rop o L o w P o w er Loss, H igh E fficiency 1.5Í.059 nTA 1.3 051)u o H igh S urge C apability + [ >)- 5.8(.23)DIA t n j 1.5(.059) ru a 1.3<.0oT) 2M.83) MIN 10(.39)

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

smd diode f54

Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040