DIODE 220C Search Results

Hitachi DSA0087

Abstract: HL6722G
Contextual Info: HL6722G AlGaInP Laser Diode ADE-208-220C Z 4th Edition Dec. 2000 Description The HL6722G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for bercode scanner, and various other types of optical equipment.

HL6722G

Abstract: ITH20 Hitachi DSA0047
Contextual Info: HL6722G AlGaInP Laser Diode ADE-208-220C Z 4th Edition Dec. 2000 Description The HL6722G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for bercode scanner, and various other types of optical equipment.

BU506D

Contextual Info: Inchange Semiconductor Product Specification BU506D Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching speed ・With integrated efficiency diode APPLICATIONS ・Horizontal deflection circuits of colour TV receivers.

BUL381D

Abstract: TP30S
Contextual Info: Product Specification www.jmnic.com BUL381D Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage capability ・Very high switching speed ・Integrated antiparallel collector-emitter diode APPLICATIONS ・Designed for use in lighting

BUL381D

Abstract: 2a DIODE
Contextual Info: SavantIC Semiconductor Product Specification BUL381D Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost

BUL381D

Contextual Info: Inchange Semiconductor Product Specification BUL381D Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed ・Integrated antiparallel collector-emitter diode APPLICATIONS ・Designed for use in lighting applications and low cost

BU406D

Abstract: BU407D BU-406D 400v high speed diode
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU406D BU407D DESCRIPTION •With TO-220C package ·High voltage ·Fast switching speed ·Low saturation voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output

BUL128D

Contextual Info: Inchange Semiconductor Product Specification BUL128D Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

BU506D

Contextual Info: SavantIC Semiconductor Product Specification BU506D Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·Fast switching speed ·Built-in damper diode APPLICATIONS ·Horizontal deflection circuits of colour TV receivers. ·Line-operated switch-mode applications.

H5N2512CF

Abstract: H5N3007CF Diode BAY 32
Contextual Info: H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D 1. Gate 2. Drain 3. Source

H5N3007CF

Contextual Info: H5N3007CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0473-0100 Rev.1.00 Nov.11.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D 1. Gate 2. Drain 3. Source

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

LA440

Abstract: LE7602-LA180C LE7602-LAC LA220C 180C 210C LE7602-L LE7602-LA LE7602-LA260C
Contextual Info: Technical Data Rev. 1.0, May 2001 LE7602-LAC, LE7602-LAxxxC Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

smd diode f54

Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040

Contextual Info: Æ 7 SGS-THOMSON *7 £ liMD l^i[L[l@M RD[l 8 BYT 12-200-^400 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIONS: ■ FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS

byt12

Contextual Info: rz7 SCS-THOMSON B Y T 1 2 -2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SW ITCHING LOSSES ■ LOW NOISE TURN-O FF SW ITCHING SUITABLE APPLICATIONS : ■ FREE W HEELING DIODE IN CONVERTERS AND M OTO R CO NTROL CIRCUITS

handling of beam lead diodes

Contextual Info: fZSI HEWLETT k"KM PACKARD Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical - G O LD L E A P S - v , /,*, 8 02 81 1 P CATHODE a s s iv a t io n • Low Capacitance 0.017 pF Typical • Low Resistance 4.7 Q Typical

Contextual Info: 2SJ471 Silicon P Channel D V -L MOS FET High Speed Power Switching HITACHI ADE-208-540 1st. Edition Features • Low on-resistance • 4V gate drive devices. • High speed switching R d s «*. = 25 m il typ. Outline T O -220C F M f G c 1's I OS 500 1. Gate