DIODE 20A FOR CHARGER Search Results

IXGH20N140C3H1

Abstract: IXGT20N140C3H1 IC100 GenX3TM
Contextual Info: Advance Technical Information GenX3TM 1400V IGBTs w/ Diode IXGH20N140C3H1 IXGT20N140C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1400V 20A 5.0V 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: Advance Technical Information GenX3TM 1400V IGBTs w/ Diode IXGH20N140C3H1 IXGT20N140C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1400V 20A 5.0V 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: Advance Technical Information IXYP20N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 20A 2.5V 28ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where

Contextual Info: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverters and other applications where

Contextual Info: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverters and other applications where

fgh40n60

Contextual Info: FGH40N60SMD_F085 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where

ind cont eq 214 L

Abstract: 10-60V E246877 QS-10 12AWG 217F ZM11 9278 ps2 controller wiring diagram 10-60VDC
Contextual Info: YR2.DIODE 10-60V, 20A, DUAL DECOUPLING MODULE Y-Series DECOUPLING MODULE • ■ ■ ■ ■ ■ ■ ■ ■ ■ Dual input, single output Two diodes common cathode Rugged metal housing Width only 32mm Cost effective solution to build redundant systems 10-60V Wide-range input

Contextual Info: YR2.DIODE DC12-48V 120V , 20A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ Cost Effective Solution to Build Redundant Systems Dual Input with Single Output Two Diodes (Common Cathode) DC12-48V (120V) ±25% Wide-range Input

SC454

Abstract: SC452 SC183 SC440 SC189 GPU board diagram SC560C SC412A SC415 SC416
Contextual Info: Semtech IMVP6+ Solutions Q2/ 2009 System diagram LED BKLIGHT DISPLAY IMVP6/6+ CPU SC452 SC454 Single/Dual Switching SC440 SC441 SC412A SC415 1485 like SC416 (415+tracking) Battery Charger CHIPSET Linear SC4211/5/6 SC338/9 SC560 GPU SC470 SC471(A) SC475A

IXGA30N60C3C1

Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
Contextual Info: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information IXYP20N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM

Contextual Info: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings

Contextual Info: PRELIMINARY RFJS3006F rGAN-HVTM 650V SSFET With Ultra-Fast Freewheeling Diode The RFJS3006F is a 30A, 650V normally-off sourced switched FET SSFET GaN HEMT providing the same insulated gate ease of use as a power MOSFET or an IGBT, but enabling much higher efficiency at much higher PWM frequencies. The SSFET uses

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode IXYT20N120C3D1HV High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 17A 3.4V 108ns TO-268HV Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M

IXYH20N120C3D1

Contextual Info: IXYH20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 17A 3.4V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M

Ultra fast diode

Contextual Info: Advance Technical Information IXYH20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

20N120C3

Contextual Info: IXYJ20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

Contextual Info: Advance Technical Information IXYJ20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Advance Technical Information IXYP10N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 10A 2.50V 23ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3D4 IXGP30N60C3D4 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGH30N60C3D1

Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
Contextual Info: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ