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IXYS Corporation IXGH60N60C3D1 Transistor, Igbt, 600V, 75A, To-247; \|Ixys Semiconductor IXGH60N60C3D1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGH60N60C3D1	Bulk	90		1	1 $17.41 10 $15.19 100 $10.02 1000 $9.10 10000 $9.10	Buy Now
TTI	IXGH60N60C3D1	Tube			300	1 - 10 - 100 - 1000 $10.22 10000 $10.22	Buy Now
TME	IXGH60N60C3D1		290		1	1 $15.48 10 $11.55 100 $10.74 1000 $10.74 10000 $10.74	Buy Now
Littelfuse Inc IXGH60N60C3D1 Disc IGBT PT-HiFrequency TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXGH60N60C3D1	Bulk		8 Weeks	30	1 - 10 - 100 $14.56 1000 $14.56 10000 $14.56	Get Quote
IXYS Corporation IXGT60N60C3D1 Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXGT60N60C3D1		13		1	1 $6.65 10 $5.28 100 $4.94 1000 $4.94 10000 $4.94	Buy Now

60N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
60N60C2 Abstract: ixgh60n60c2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	60n60c2 ic110 o-247 o-268 +4728b1 123b1 065b1 ixgh60n60c2	PDF
IXGN60N60C2 Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A	Original	60n60c2 ixgn60n60c2d1 ot-227b ic110 +92x61-06a ixgn60n60c2 60n60c2d1 ixgn60n60 igbt 60n60c2d1 siemens igbt siemens igbt 75a high current igbt 60n60c2d	PDF
siemens igbt 75a Abstract: PLUS247 Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	60n60c2d1 ic110 2x61-06a siemens igbt 75a +1plus247	PDF
IXGR60N60C2 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	isoplus247tm 60n60c2 60n60c2d1 ic110 +5if110 ixgr60n60c2d1 isoplus247 2x61-06a ixgr60n60c2	PDF
60-06A Abstract: 60N60C2D1 60N60C2D IF110 PLUS247 Contextual Info: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	60n60c2d1 ic110 if110 o-264 +40-06a 60-06a 60n60c2d plus247	PDF
60N60C2 Abstract: gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	isoplus247tm 60n60c2 60n60c2d1 ic110 +10if110 ixgr60n60c2d1 2x61-06a gr60n60 siemens igbt 75a 60n60c2 di gr60n60c2 60n60 isoplus247 gr60n60c2d1	PDF
60N60C2D1 Contextual Info: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	60n60c2d1 ic110 o-264 if110 +2plus247 0-06a	PDF
60N60C2D1 Abstract: 60N60C2 DI IGBT 60N60C2D1 C9VI Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A	Original	60n60c2 ixgn60n60c2d1 ic110 ot-227b +52x61-06a 60n60c2d1 60n60c2 di igbt 60n60c2d1 c9vi	PDF
60N60C2 Abstract: 60N60C2D1 Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A	Original	60n60c2 ixgn60n60c2d1 ic110 ot-227b +22x61-06a 60n60c2d1	PDF
60N60C2 Abstract: 60n60c 60N60C2D ISOPLUS247 PLUS247 60N60 Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface IXGR_C2 VCES IC25 VCE(sat) tfi(typ) IXGR_C2D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	isoplus247tm 60n60c2 60n60c2d1 ic110 +8728b1 123b1 065b1 60n60c 60n60c2d isoplus247 plus247 60n60	PDF
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 Symbol Test Conditions V CES TJ = 25°C to 150°C	Original	isoplus247tm 60n60c2 60n60c2d1 ic110 +4if110 ixgr60n60c2d1 isoplus247 2x61-06a	PDF
Contextual Info: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	60n60c2 ic110 o-247 o-268 +3728b1 123b1 065b1	PDF
IGBT 60N60C2D1 Abstract: siemens igbt 75a PLUS247 60N60C2D1 Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	60n60c2d1 ic110 2x61-06a igbt 60n60c2d1 +2siemens igbt 75a plus247	PDF
60N60C2D1 Abstract: IGBT 60N60C2D1 MD 202 60N60 siemens igbt 75a TO-264-aa 60-06A IF110 PLUS247 HIPERFAST IGBT WITH DIODE Contextual Info: HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	60n60c2d1 ic110 if110 o-264 +90-06a igbt 60n60c2d1 md 202 60n60 siemens igbt 75a to-264-aa 60-06a plus247 hiperfast igbt with diode	PDF

7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF