DIODE 1FT Search Results

smd diode 27c

Abstract: marking smd NU smd diode marking sim kb MARKING SMD Diode marking 27C SMD MARKING DIODE VU smd marking nu smd diode marking NN smd marking 2x DG1M3
Contextual Info: Schottky Barrier Diode Single Diode m tm m DG1M3 o u t lin e Package : G 1 F Unu:mm Weight O.O llii Typ 30 V 1A in 3 Feature • • • • • lâiW§y=0.8mm • ß V f = 0.46 V • 1ftlR= 0.05mA i |C24 Ultra-small SMD Ultla-thin PKG=0.8mm Low Vf -0.46V

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Contextual Info: CM420855 SCR/Diode POW-R-BLOK Modules Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 55 Amperes/800 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and

Contextual Info: International IÖ R Rectifier Part Number Phase Control SCR High-Voltage . "ORM Diode Rating* ’ T AV> @ Tc (A r q (V) (V) Fax Case on Demand Outline Key Number 'ism (a) (A) (b) RQIC(DC) (K/W) (A) Notes Thyristor / High Voltage Diode Doubler Circuit Negative Control

Contextual Info: phase Control SCR International IO R Rectifier T p S .-.NN^LIlSAff I Ï J - Port Number / High-Voltage . VDRM Diode Rating* ' t AV @ tC 00 00 (À) (°C) .TS* . , . W (A) (°) (A) R Rc=JiC(DC) (K/W) Notes on* Cose Deman(| Outline Number Key Thyristor / High Voltage Diode

4n4001

Abstract: 4N4U 4N40 4N39 GE SCR 1000
Contextual Info: G E SOLI» STATE DÌ 3fl7S0fll DDlltflS 0 optoelectronic specification« 7 W /-Î7 ” Photon Coupled Isolator 4N39,4N40 SVM0OI Ga As Infrared Em itting Diode & Light Activated SCR A B C The GE Solid State 4N39 and 4N40 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­

Contextual Info: Schottky Barrier Diode Single Diode D1FJ10 Unit ‘ mm Package I 1F Weight 0.058g Typ Ä V -K v -? 1 0 0 V 1A Feature • /J ^ S M D • Ir= CD*— M — • S m all S M D 0.2mA • L o w lft=0 .2 m A Main Use • S w itc h in g R eg u la to r • D C /D C D V K -^

A479

Abstract: r-14 a479
Contextual Info: ESAG63-004 2 oa SCHOTTKY BARRIER DIODE • 4 ^ ^ : Features • 1ftVF Low V F m m Connection Diagram Super high speed sw itchin g. • 1 u - :t - High reliability by planer design. ■ fflìÉ : Applications High speed pow er sw itch in g . M axim um Ratings and Characteristics

Contextual Info: SIEMENS LG Z181 2 to 6 DIODE ARRAYS LG Z182- 186 8, 10 DIODE ARRAYS LG Z188, 180 SINGLE Green Miniature LED Lamp P a cka ge D im e n sio n s in In ch e s m m 0 1 8 ( 45) 0 12 ( 3) FEA TU RES * G re e n D iffu s e d Lens C h a ra c te ris tic s (TA=25°C) All values typical unless otherw ise noted

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

moc 3021 scr

Abstract: SCR moc3020 schematic moc 3041 application SCR moc3020 circuit moc 3021 zero crossing moc 3041 SCR application moc3041 application note 1Ft 6PIN MOC3040 moc 3041 application note
Contextual Info: MOC3040 MOC3041 ZERO VOLTAGE CROSSING OPTICALLY ISOLATED TRIAC DRIVER This device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral triac driver.

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

GM5WA06256A

Abstract: ip22m ph9080 M7S2
Contextual Info: SH ARP COMPOUND SEMICONDUCTOR SYSTEMS DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION r DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE m o d e ln o . GM5WA06256A J Specified for CUSTOMERS' APPROVAL PRESENTED . Date Date By By Aflr ~ ßé

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

ERE81-004

Abstract: ERE81
Contextual Info: ERE81 30A : Outline Drawings SCHOTTKY BARRIER DIODE : Features • Low forward voltage idrop(VFM) • Fast recovery time • Stud mounted i Applications • Sw itching power supplies Prevention to contrary connection • Others. Maxim um Ratings and Characteristics

Contextual Info: FU JI 2SK1276A N-channel MOS-FET F-V Series 250V > Features - 0,25Q 20 A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings Tc=25°CV

k302p

Contextual Info: K3020P G Series VISHAY Vishay Telefunken T Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

TLP596A

Abstract: 2fl marking
Contextual Info: PHOTO RELAY TLP596A TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP596A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package. The TLP596A is a bi-directional switch which can replace mechanical

Contextual Info: ERC25 1 .2A : Outline Drawings FAST RECOVERY DIODE r^ . - 28MIN — *1.0 1 1 7.5 — ?8MIN — * Features •R High voltage by mesa design. : M arking tf • Sf&JSte High reliability * 7 —3 - f- : W Color code : Green PMBISfc ■EISs I Applications

MARK 11f diode

Abstract: ERC25 JT MARKING
Contextual Info: ERC25 1 .2A : Outline Drawings FAST RECOVERY DIODE r . - 28MIN — ^ *1.0 - 1 1 7.5 — ? 8MIN — * Features •R High voltage by mesa design. : M arking tf • Sf&JSte High reliability * 7 —3 - f- : W Color code : Green PMBISfc ■EISs I Applications

ERE81

Abstract: ERE81-004
Contextual Info: ERE81 30A > 3 • y h + - / « ; r ^ ' f + : Outline Drawings - K SC H O TTKY B A R R IER DIODE : Features • • Low forward voltage ¡dropiVpM) Fast recovery time • Stud mounted : Applications • Switching power supplies • Prevention to contrary connection