DIODE 153 Search Results

1550nm FP Laser Diode with butterfly pin package

Abstract: 1550nm Laser Diode with butterfly pin package ldi SCW 1550 laser diode 1550 nm high power 1550nm Laser Diode butterfly 1550nm Laser Diode butterfly Pulsed Laser 1550nm FP 1550nm Laser Diode with butterfly pin package
Contextual Info: Catalog 1307895 Revised 9-04 Fiber Optic Products Catalog “NEW” SCW 1530 Series Laser Modules The SCW 1530 Series Laser Diode Module is a 1550nm F-P laser diode with packaging options which include a 14-pin DIP or 14-pin Butterfly package. The laser diode is optically coupled to

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

BZX88

Abstract: BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 BZX88-C2V7
Contextual Info: MICRO-E SILICON PLANAR HIGH-SPEED SW ITCHING DIODES Ratings and Characteristics at 2 5 °C ambient temperature Type BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 Description Max. Vrw m Volts 60 Single diode 30 Single diode Single diode 15 60 Common cathode diode pair

H15R1202

Abstract: IGBT H15R1202 H15R120 IHW15N120R2 PG-TO-247-3-21 600v 20a diode H15R1202 equivalent
Contextual Info: IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

diode in 5401

Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Contextual Info: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages

ingaasp

Abstract: Pulsed Laser 1550nm
Contextual Info: DATA SHEET LASER DIODE NDL7564P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7564P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode liber.

Contextual Info: HL1566AF 1.55 µm Laser Diode with EA Modulator Description The HL1566AF is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

Ea 1530 A

Contextual Info: HL1566AF 1.55 pm Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 pm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integratedwith the laser diode. It is

nec laser diode OTDR

Abstract: NDL7103 NDL7113 NDL7564P NDL7564P1 NDL7564P1C NDL7564P1D NDL7564PC NDL7564PD
Contextual Info: DATA SHEET LASER DIODE NDL7564P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7564P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.

nec laser diode OTDR

Abstract: NEC diode 1550 NDL7553PD NDL7103 NDL7113 NDL7553P NDL7553P1 NDL7553P1C NDL7553P1D NDL7553PC
Contextual Info: DATA SHEET LASER DIODE NDL7553P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.

NEC diode 1550

Abstract: nec laser diode OTDR NDL7103 NDL7113 NDL7563P NDL7563P1 NDL7563P1C NDL7563P1D NDL7563PC NDL7563PD
Contextual Info: DATA SHEET LASER DIODE NDL7563P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7563P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.

Contextual Info: DATA SHEET LASER DIODE NDL7563P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7563P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.

LuminentOIC

Contextual Info: 1530nm FP Laser Diode C-153-001-E-BX-01 Features • Uncooled laser diode with MQW structure • 5mW CW operation at –40 to +85ºC • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode

NTHD4P02FT1G

Abstract: marking code vishay SILICONIX SMD TSOP C3 NTHD4P02F NTHD4P02FT1
Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

GR-468-CORE FP laser To can

Contextual Info: 1530nm FP Laser Diode C-153-001-E-XX Features • Uncooled laser diode with MQW structure • 5mW CW operation at –40 to +85ºC • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode

Ea 1530 A

Contextual Info: HL1566AF 1.55 im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 jim InGaAsP distributed-feedback laser diode (DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

diode bas32

Contextual Info: BAS32 _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications.

NX8570SD

Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Contextual Info: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

Contextual Info: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

1583 Series

Abstract: 362d 766d
Contextual Info: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

LCU150588F

Contextual Info: Laser Diodes 1550nm Laser Diode 1550nm Laser Diode LCU150588F •Features Un-cooled Laser diode with MQW structure Wide operation temperature range Dew point below -40oC Both ball lens and flat window cap available ■External dimensions Unit : mm ■Absolute Maximum Ratings(Tc=25℃)

diode 30a 400v

Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.