DIODE 1000V 10A Search Results

10N100P

Abstract: IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH10N100P IXFV10N100P IXFV10N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions

diode schottky 1000V 10a

Abstract: SiC MOS APT0502
Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies D Features  G S  SiC Schottky Diode

Contextual Info: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

mosfet 10a 800v

Abstract: SOT-227 heatsink sic-diode 1000v APT0502 diode schottky 1000V 10a
Contextual Info: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

TL130

Abstract: SC371-10A 02 MARKING diode 1000V 0.5a
Contextual Info: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features 1.35 ± 0.4 Surface-mount device Low VF + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking

Contextual Info: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 1.35 ± 0.4 Surface-mount device Low VF 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking

SOT-227 heatsink

Abstract: APT0502 diode schottky 1000V 10a
Contextual Info: APT22M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

1N4007 operating frequency

Abstract: CHARACTERISTICS DIODE 1N4007 LN4007 diode ln4007 1N4007 RECTIFIER DIODE LN4004 diode DIODE 1N4001 surge current DIODE 1N4007 DIODE 1N4001 characteristics LN4004
Contextual Info: SILICON RECTIFIER DIODE ÎA/IOO— 1000V 1N4001~1N4007 FEATURES • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability « 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S \ Voltage Rating type

Contextual Info: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

APT26M100JCU2

Abstract: sic-diode 1000v APT0502 diode schottky 1000V 10a
Contextual Info: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

IXFH20N100

Abstract: IXFH20N100P 20n10 20N100P IXFT20N100P N CHANNEL MOSFET 10A 1000V F20N
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFH20N100P IXFT20N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR

Contextual Info: APT22M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

Contextual Info: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch

Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH20N100P IXFT20N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR

bod ixys

Abstract: IXYS IXBOD
Contextual Info: Breakover Diodes Applications ● Transient voltage protection High-voltage switches ● Crowbar ● Lasers ● Pulse generators ● i IH IBO V VH VBO H 1999 IXYS All rights reserved H-1 IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V

IXYS IXBOD

Abstract: lt 747 bod ixys
Contextual Info: D IX Y S Breakover Diodes Applications • Transient voltage protection • High-voltage switches • Crowbar • Lasers • Pulse generators o- 1998 IXYS All rights reserved H -1 mmm IXBOD 1 -06.10 1A. X U Single Breakover Diode =600 - 1000V ^AVM ”

Contextual Info: IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V IAVM = 0.9 A A K 600 ±50 700 ±50 800 ±50 900 ±50 1000 ±50 IXBOD 1 -06 IXBOD 1 -07 IXBOD 1 -08 IXBOD 1 -09 IXBOD 1 -10 Symbol Conditions ID TVJ = 125°C; Ratings 20 V = 0,8x VBO

diode js

Abstract: DIODE JS.6 IXYS IXBOD
Contextual Info: n i • I i1 YA vJL U IXBOD 1 -06.10 Single Breakover Diode > o ffl ±50 ±50 ±50 ±50 =600 -1000V ^AVM ” A Standard V 600 800 900 1000 VB0 Types IXBOD IXBOD IXBOD IXBOD 1 -06 1 -08 1 -09 1 -10 Symbol Test Conditions Ratings Id T w = 25°C; V = 0,8x V B0

5AAFT

Contextual Info: ERD27ERD77 10A*1000V »±'<9-*y*-K • a « g a E ? y *-K : Outline Drawings FAST RECOVERY DIODE : Features • Glass passivated ch ip H ig h reverse v o lta g e c a p a b ility • 7>9"sY'ffc S tu d m o u n te d : Applications 9 S w itc h in g p o w e r s u p p lie s

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package P-600 Package Weight mg 2100 Product Group Type No. FR601 – FR607 MR750 – MR7510 P600A – P600S 10A05 – 10A10 3KP Series 5KP Series 15KP Series 20KP Series 30KP Series

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41