35M8 Search Results

B772 SMD

Abstract: PTC C1165 PTC S M T209 P1201 a120 epcos t122 Epcos T709 P1215-A80 c1165 epcos t209 epcos t209 mit
Contextual Info: Kaltleiter PTC Thermistors Lieferprogramm 2001 / Short Form Catalog 2001 http://www.epcos.com EPCOS AG Vorwort Preview Dieses Lieferprogramm stellt Ihnen die breite Palette von Kaltleitern der EPCOS AG vor – einem Unternehmen mit jahrzehntelanger Erfahrung in Entwicklung, Fertigung und Vertrieb elektronischer

35-M145-A70

Abstract: M155-A70 m1145-a70
Contextual Info: M a ß b ild Typ N e n n a n s p re c h te m p e r a tu r W id e rs ta n d B e s te ll-N r. O u tlin e d r a w in g Type N o m in a l th r e s h ­ o ld te m p e ra tu re R e s is ta n c e f l PT01> b e i/a t O rd e rin g c o d e Thai 7"n a t - 5 K 7 nat+ 5 K

Contextual Info: AD VA NC ED PO WE R T E C H N O L O G Y □ EST'IO'I 0 0 0 0 5 0 4 bTB * A V P 41E D A Ô'W dvanced P O W iz R O s {2 ) 'T - ÿ i- is . APT40M80AFN 400V 58.0A 0.08; 35M80AFN 350V 58.0A 0.08L POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFE

SMD Type

Abstract: 21M7A 45M15BF 45M7B 21M15A 21M15B 21M7B 45M15AF 45M20BF 70M15B
Contextual Info: Quartz Filters Metal packaged SMD and through hole MCF Type Nominal Frequency Pole [ MHz ] Pass Band Attenuation Band Ripple Insertion max. Loss Attenuation Guaranteed [dB ] [ kHz ] [ dB ] [ kHz ] [ dB ] [ dB ] [ dB ] Terminal Impedance ZIN = ZOUT [ Fo ~  kHz ]

AF508

Abstract: sml40m80afn
Contextual Info: SEMELAB PLC bOE =rr= V r mmmm J> m 0133107 GGOOfiVO / \ F - P a r k /AP\ TIO M S flLB _ MOS POWER 4 '-J~' - 7 / i N T INI i /— 3 3 -1 5 SEME LAB SML40M80AFN 35M80AFN 400V 58.0A 0.080 350V 58.0A 0.08ÍÍ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

801r2dn

Abstract: 5530DN 35M4 SML551R3DN 4520D SML902RDN 7516-D 5025DN 4065d SML5085DN
Contextual Info: SEM E LA B PLC bOE J> • 0 1 3 3 10 7 □ □ □ 0 5 ‘iE 63^ ■ SHLB 'T - y\ - l ^ ELECTRICAL SPECIFICATIONS FOR SEMELAB MOS POWER 4 DICE MOS POWER DIE SIZE 104 199 X 204 MILS 4 9 / DIE PACK 105 290 X 250 (MILS) 2 5 /D IE PACK 106 254 X 414 (MILS) 6 0 /D IE

APT40M80AFN

Abstract: APT35M80AFN
Contextual Info: ADVANCED POWER TECHN0L06Y 4^E □ BST'lD'l 0 0 0 0 5 0 4 D Op{2 tTB « A V P A dvanced > P : O W E R - i ~ - 3 ° ) - 1s Techno lo g y APT40M80AFN 400V58.0A 0.08f 35M80AFN 350V 58.0A 0.08^ Ô S 2 ) POWER MOS IV N - CHANNEL ÈNHANCEMENT MODE HIGH VOLTAGE POWER MOSFE