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    IXFH10N100P Search Results

    IXFH10N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFH10N100P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1KV 10A TO-247AD Original PDF 4
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    IXFH10N100P Price and Stock

    IXYS Corporation

    IXYS Corporation IXFH10N100P

    MOSFET N-CH 1000V 10A TO247AD
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    DigiKey IXFH10N100P Tube 580 1
    • 1 $8.22
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    Mouser Electronics IXFH10N100P 508
    • 1 $8.55
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    Verical IXFH10N100P 328 9
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    TME IXFH10N100P 328 1
    • 1 $7.90
    • 10 $5.96
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    Chip 1 Exchange IXFH10N100P 7,212
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    Chip Stock IXFH10N100P 2,760
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    IBS Electronics IXFH10N100P 600 30
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    New Advantage Corporation IXFH10N100P 4,442 1
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    Vyrian IXFH10N100P 202
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    IXYS Corporation IXFH10N100P (POLAR HIPERFET)

    Mosfet, N-Ch, 1Kv, 10A, To-247Ad Rohs Compliant: Yes |Ixys Semiconductor IXFH10N100P
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    Newark IXFH10N100P (POLAR HIPERFET) Bulk 144 1
    • 1 $8.01
    • 10 $5.43
    • 100 $4.90
    • 1000 $4.47
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    IXFH10N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFH10N100P

    Contextual Info: IXFH10N100P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 10A Ω 1.4Ω 300ns TO-247 AD Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFH10N100P 300ns O-247 100ms 10N100P 3-12-13-A IXFH10N100P PDF

    10N100P

    Abstract: IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions


    Original     		IXFH10N100P IXFV10N100P IXFV10N100PS 300ns PLUS220 10N100P 10N100P IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH10N100P IXFV10N100P IXFV10N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions


    Original     		IXFH10N100P IXFV10N100P IXFV10N100PS 300ns PLUS220 10N100P PDF