DIODA N 04 Search Results

MW131

Abstract: DIODE 2141
Contextual Info: OPTEK TECHNOLOGY INC ObE D | bVT&SBO OODOHlb 3 g Optoelectronics Division B TRW Electronic Components Group Product Bulletin 5190 January 1985 _ a e A lm — M Optically Coupled Isolator Type 0PI14Q v~ .oisoffi4 UA0S “ 6010 PUTtD l 0VAR U— .04W127» .028(0.711

dioda by 238

Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching

PDC4310

Contextual Info: T & D TECHNOLOGIE S USE D • 1105003 QQG007M 7 Œ B T D T PDT1412/1411 PIGTAILED PIN PHOTODIODE Features Applications I Hermetic construction ■ Instrumentation ■ Low dark current ■ O -E convertors ■ High reliability planar InGaAs PIN photodiode ■

Katalog CEMI

Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby

617G

Abstract: sfh diode 617 SFH617 reflective optocoupler puls detector sfh617g
Contextual Info: SIEMENS FEATU R ES SFH617G 5.3 kV TRIOS * OPTOCOUPLER Package Dimensions in Inches mm * C u rre n t T ra n s fe r R atios: SFH 617(3-1,40-80% S F H 6 1 7 G -2 ,63-125% SFH 6 1 7 G -3 ,100-200% S F H 6 1 7 G -4 ,160-320% * C reepage D is ta n c e s a n d C learances

2N69S

Abstract: To226AB 2N5989 diodA QE 2N5891 dioda OA 50
Contextual Info: NPN MOTOROLA SEM ICO N D U CTO R 2N5989 2N5991 TECHNICAL DATA 12 AM PERE ^v^’^ ^ ^ H l G H POWER P LA STIC CO M PLEM EN TARY SILICON POWER TRAN SISTO RS ’ POWER TRAN SISTO RS CO M PLEM EN TARY SILICON V- • •. designed for use in general-purpose am plifier and switching

NX DIODE SM

Abstract: 2N6164 2N6764 q2N6764 MOSF6
Contextual Info: 38 75081 01 G E S O L I D S T A TE 0 1E B e | 3fi7SDfil DDlflMDD 3 | - 18400 _ D 3 Standard Power MOSFETs 2N6764 File Number 1590 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E

RP1A40D5

Abstract: RM1E23AA25 RS1A23D25 AL 2425 dv RM1A23D25 RM1A40 RN2F48I30 RP1A23D5 transoptor RN1F48V50
Contextual Info: 13 PrzekaŸniki pó³przewodnikowe PrzekaŸnik pó³przewodnikowy ang. Solid State Relay jest urz¹dzeniem za³¹czaj¹cym mocy, sk³adaj¹cym siê z komponentów elektronicznych. Termin "przekaŸnik" (ang. Relay) wskazuje, ¿e urz¹dzenie jest porównywalne do przekaŸnika

dioda BY 235

Contextual Info: N -CH A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS >0 'dm CO >w PD T j'^STG tl APT 4020HN APT 3525HN APT 4C25HN UNIT 350 400 350 400 Volts Drain-Sourca Voitage Continuous Drain Current @ Tc - 25°C Pulsed Drain Current 23.5 21.0 94 84 Amps Gata-Sourca Voltage

2N6155

Abstract: 2n6156 2N6755 2N6756 dioda
Contextual Info: 3875081 G E^SOLID S TATE 01 DE 1 3 0 7 5 0 0 1 0010304 T | D ' T-39-11 Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors * N-Channel Enhancement-Mode

Contextual Info: SUPPLY VOLTAGE MONITOR ZSM560 ISSUE 2 - NOVEMBER 1995_ DEVICE DESCRIPTION FEATURES The ZSM560 is a three terminal under voltage monitor circuit fo r use in m icroprocessor systems. The threshold voltage of the device has been set to 4.6 volts making it ideal for 5

ma 8920

Abstract: dioda rectifier 04140 tny 226 dioda 12B 750PEF10 750PEF40 power dioda cross 9BB. GI 8920
Contextual Info: INTERNATIONAL RECTIFIER 4855452 INTERNATIONAL RECTIFIER 4T DE§4flSS452 DD047B4 b Data Sheet No. P D -3.06f 49C 04734 C INTERNATIONAL RECTIFIER I R 1 180A RMS Fast Turn-Off Hockey Puk Thyristors 750PEF SERIES Description The 750PEF series of fast turn-off thyristors use centre

OA7 diode

Abstract: AL 1450 DV
Contextual Info: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I« R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFV064 Product Summary Part Number The HEXFET® technology is the key to International Rectifier's advanced line of power M O S FE T transistors.

MDA980-1

Abstract: MDA990-6 MDA990-1 MDA980-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier
Contextual Info: MDA980-1 n, MDA980-6 MDA990-1 thru MDA990-6 Designers Data Sheet S IN G L E P H A S E F U L L - W A V E B R ID G E I N T E G R A L D IO D E A S S E M B L I E S 12 and 30 A M PERES 50 t h r u 600 V O LTS . . . passivated, diffused silicon dice interconnected and transfer

transistor eft 323

Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
Contextual Info: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­

Contextual Info: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T

ma 8920

Abstract: 750PEF10 750PEF40 NI-11
Contextual Info: INTERNATIONAL RECTIFIER / qcc / ct 4855452 INTERNATIONAL RECTIFIER in D e | 4ASS452 000473M b Data Sheet No. PD-3.065 49C 04734 D INTERNATIONAL RECTIFIER I R 1180A RMS Fast Turn-Off Hockey Puk Thyristors 750PEF SERIES Description Th e 7 5 0 P E F series o f fast tu r n -o ff thyristors use centre

philco transistors

Abstract: ECG77 dioda zener 39 ECG779A
Contextual Info: PHILIPS E C G INC 17E D S bbSBTSfl 00 034b2 4 T -7 7 -0 7 -0 5 ECG779A TV SIGNAL PROCESS semiconductors v io io in pu t Q ADJ. N C G .t .F . AGC C AGC M f. Q ECG779A 13 a monolithic TV circuit with sync separator, advanced noise Inversion, AGO comparator, and versatile R F AG C

potentiometer 470 ohms preset

Abstract: philco philco transistors Philips ECG flyback "RF AGC Amplifier" philco 70 ECG 177 zener diode sync separator for monochrome tv ECG779-1 zener diode A39
Contextual Info: PHILIPS E C G INC 17E D S bbSBTSfl 00 034b2 4 T-77-07-05 ECG779A TV SIGNAL PROCESS semiconductors v io io in pu t Q ADJ. N C G .t .F . AGC C AGC M f. Q ECG779A 13 a monolithic TV circuit with sync separator, advanced noise Inversion, AGO comparator, and versatile RF AGC

Contextual Info: Ç fy S P T SIGNAL PROCESSING TECHNOLOGIES S P T 7 8 2 10-BIT, 20 MSPS, TTL OUTPUT, A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Monolithic 20 MSPS Converter On-Chip Track/Hold Bipolar ±2.0 V Analog Input 60 dB SNR @ 1 MHz Input

BTP-128-400

Abstract: blyp22 BTP128 p 181 transoptor CQDP74 BZP683 Bfcp99 UCY74123 BD282 BTP129
Contextual Info: jfifj U N I T P R tS l GEMI E L E M E N T Y P Ö t P R Z E W O D N I K O W E I U K L A D Y S C A L O N E 1 9 7 9 /8 0 KATALOG SKRÖCONY ► • ■■ H U II ■ I S ■ . -. I . . . . . NAUKOWO-PRODUKCYJNE CENTRUM PÖIPRZEWODNIKÖW NAUKOWO-PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW

tektronix type 576 curve tracer

Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
Contextual Info: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­

mh7493

Abstract: MA0403A maa 502 MH1SS1 Katalog tesla diod MH7442 MH7404 MA0403 MAA723 MH74S74
Contextual Info: POLOVODICOVÉ S O U C Á S T K Y PftEDPIS PRO P Ä JEN l Polovodicove soucdstky Jsou velml choulostlvd na nadmernS otepleni. Proto, aby nedochazelo k je jich poskozeni, do p o ruiuje se zachovat tento postup pfl pd jenf: Konce pnvodii je nutno predem ocinovat v delce 4 - 5

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222