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    617G Search Results

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    617G Price and Stock

    Samtec Inc

    Samtec Inc DW-16-17-G-D-200

    .100 Flex Stack Flexible Board Stacker .110 Tail
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    Samtec Inc HLT-0617-G-H

    .100 Screw Machine Terminal Array
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    Master Electronics HLT-0617-G-H
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    Samtec Inc ZW-06-17-G-D-217-131

    FLEXIBLE BOARD STACKING H
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    Avnet Americas ZW-06-17-G-D-217-131 Bulk 1 Weeks, 2 Days 1
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    Sager ZW-06-17-G-D-217-131 1
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    Samtec Inc HW-06-17-G-D-250-SM

    .100 Flex Stack High-Temp Flexible Board Stacker Surface Mount
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    Samtec Inc HW-06-17-G-D-325-SM-TR

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    617G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    617G2

    Abstract: 617G-2 617g3 617G-3 617G-4 617G-1 617G opto coupler siemens reflective optocoupler GE opto detector
    Contextual Info: SIEMENS FEATURES • Current Transfer Ratios: SFH 617G-1, 40-80% SFH 617G-2, 63*125% SFH 617G-3,100-200% SFH 617G-4,160-320% • Creepage Distances and Clearances per VDE 0110 • Insulation Thickness >0.7 mm • Creepage Distance >7 mm • High Common-Mode Rejection


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    617g-1617g-2617g-3617g-4+8e52744sfh617g617g2617g3617gopto coupler siemensreflective optocouplerge opto detector PDF

    617G

    Abstract: sfh diode 617 SFH617 reflective optocoupler puls detector sfh617g
    Contextual Info: SIEMENS FEATU R ES 617G 5.3 kV TRIOS * OPTOCOUPLER Package Dimensions in Inches mm * C u rre n t T ra n s fe r R atios: SFH 617(3-1,40-80% S F H 6 1 7 G -2 ,63-125% SFH 6 1 7 G -3 ,100-200% S F H 6 1 7 G -4 ,160-320% * C reepage D is ta n c e s a n d C learances


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    sfh617g617gsfh diode 617sfh617+2reflective optocouplerpuls detector PDF

    ecg semiconductors master replacement guide

    Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
    Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei


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    ecg semiconductors master replacement guideecg master replacement guidemkl b32110siemens mkp b32650+6c945 p 331 ks transistoric,mastermaster replacement guidekennlinie kty 10-6siemens b32110a2005 transistor PDF

    mcp3021z

    Abstract: P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler
    Contextual Info: PHOTOCOUPLER CROSS REFERENCE For user’s convenience, the Sharp equivalents in comparison with the other m anufacturers’ products are suggested in this list. The data is prepared on the basis of main electrical and mechanical characteristics, however, Sharp assumes no responsibility for the actual use of the data and for the specifications of other


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    lp666jlp721tlp721flp731+14tlp732pc918pc702vpc714vmcp3021zp621gbdpc817bdpc-817bp621gp620gbp620-gbtlp622621-4gtoshiba p521 photocoupler PDF

    Contextual Info: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


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    cha36666-17ghz26dbm17dbm+1dscha3666-8108 PDF

    PC617

    Abstract: PC617C PC1555C pc1555g2 1555C 617G2 PC617PC1555 617g-2 R1300 VTR 200 T
    Contextual Info: データ・シート バイポーラ・アナログ集積回路 Bipolar Analog Integrated Circuit µPC617,1555 タイマ回路 PC617, 1555は,わずかな外付け部品で単安定発振,無安定発振等各種のタイミング信号発生回路が得られるタ


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    pc617pc617pc1555pc617cdip300+9pc617g2op225pc1555cpc1555g21555c617g2617g-2r1300vtr 200 t PDF

    PC617

    Abstract: 617G2 uPC617 PC617C PC1555C 1555G2 617g-2 HPC617 pc1555g2 pc1555g
    Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    pc617pc617pc1555pc617cdip300+10pc617g2op225pc1555cpc1555g2617g2upc6171555g2617g-2hpc617pc1555g PDF

    PHONE JACK, MINI 3.5mm

    Abstract: jack 3.5mm chassis 3.5mm Stereo jack 4 CONDUCTOR 3.5mm jack stereo jack chassis stereo jack 3.5mm stereo j 128 3.5mm phone jack stereo stereo Jack 6.3 stereo jack 3.5mm chassis JACK 3.5 MM STEREO
    Contextual Info: NO.MX-328BL 03.5 NO.MJ-156L 3-CONDUCTOR MINIATURE JACK. (SINGLE CLOSED) Net Weight : 2.9 gr MONO Net Weight : 1.5 gr. (03.5) « C * NO.M03-772A0 (03.5) NO.MJ-158L PANEL MOUNT 3-CON. STEREO MINIATURE JACK. (SINGLE CLOSED) Net Weight : 2 gr. (03.5) hl~ «d


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    mj-156lmj-158lmx-328blm03-772a0+16mx-386glmj-352mj-352nmj-354a0mx-345g66mmj-177msphone jack, mini 3.5mmjack 3.5mm chassis3.5mm stereo jack4 conductor 3.5mm jackstereo jack chassisstereo jack 3.5mm stereo j 1283.5mm phone jack stereostereo jack 6.3stereo jack 3.5mm chassisjack 3.5 mm stereo PDF

    tda 6109

    Abstract: V23100-V7228-F110 B32650 V23100-V7213-F104 V23100-W1224-A104 V23082-A1005-A401 V23108-A1003-B101 V23104-A1003-B101 V23100-V7228-F104 B32110-F
    Contextual Info: Katalognummern-Referenz: SCHURICHT-Nummern ⇔ SIEMENS-Nummern Da im Katalog aus drucktechnischen Gründen die Siemensnummern oft nicht zusammenhängend – sondern in Produktgruppen- und Einzelexemplar-Teil aufgetrennt – dargestellt sind, finden Sie hier in einer großen Tabelle für jedes Bauteil die SCHURICHT- und die SIEMENS-Nummern


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    b57236s509mq67000a8118q67000a8183q67000a9094+16q670008237q67000a9108q67000a9062q67000a8187q67000a9003q67000a9059tda 6109v23100-v7228-f110b32650v23100-v7213-f104v23100-w1224-a104v23082-a1005-a401v23108-a1003-b101v23104-a1003-b101v23100-v7228-f104b32110-f PDF

    lg 6154

    Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
    Contextual Info: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp


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    q60215-y62o60215-y63-s1q60215-y65q60215-y66+13q60215-y67q60215-y111-s4q60215-y111-s5q60215-y1111q60215-y1112q60215-y1113lg 6154kty 10-8dl1416kty 20-5dl440o62902-b156-f222q62901-b64 PDF

    17-18g

    Abstract: 8144 10A1 10B1 CHA3513 617G
    Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


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    cha35136-18ghzdscha3513-814417-18g+4814410a110b1617g PDF

    CHA3666-QAG

    Abstract: AN0017
    Contextual Info: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


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    cha3666-qag8-17ghz6-17ghz26dbm+416dbm16l-qfn3x3dscha3666-qag8108an0017 PDF

    SFH611-3

    Abstract: sfh-610-1 5186A SFH611-4 SFH 567 GE cny17 SFH640-2 SFH610-2 sfh617g-2 BRT13H
    Contextual Info: Optocouplers Packag* and Typ* Package Outlirt« Fsa turcs Part Number Currant Tran*far Ratio % lf«10 mA IL205 4 0 -80 IL206 63-125 {Voc)1 Withstand Taat 8 pin SO IC -8 DIP, single phototransislor SFH6106-3 SFH S106 4 pin DIP surface mount, phototransistor


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    il205il206sfh6106-3sfh6156-1+15brt11hbrt12hbrt13hbrt11mbrt12mbrt13msfh611-3sfh-610-15186asfh611-4sfh 567ge cny17sfh640-2sfh610-2sfh617g-2 PDF

    CHA3666-QAG

    Abstract: AN0017
    Contextual Info: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


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    cha3666-qag8-17ghz6-17ghz26dbm+416dbm16l-qfn3x3dscha3666-qag8108an0017 PDF

    SFH 255 FA

    Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
    Contextual Info: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite


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    068000-a5018q68000-a5017q68000-a5707q62703-n26+12q62703-n51q62703-n52q68000-a7302q68000-a7303q68000-a7304q68000-a8086sfh 255 falr 2703ly3360kdl340mfp310l100-75q68000-a8452 PDF

    10A1

    Abstract: 10B1 CHA3513
    Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


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    cha35136-18ghzdscha3513-814410a1+110b1 PDF

    CHA3666-99F

    Abstract: CHA3666-99F/00 CHA3666 8108
    Contextual Info: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


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    cha36666-17ghz26dbm17dbm+4dscha3666-8108cha3666-99fcha3666-99f/008108 PDF

    17-18g

    Abstract: CHA3513 8144 10A1 10B1
    Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


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    cha35136-18ghzdscha3513-814417-18g+3814410a110b1 PDF

    Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


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    cha35136-18ghzdscha3513-8144 PDF

    Contextual Info: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


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    cha3666-qag8-17ghz6-17ghz26dbm+316dbm16l-qfn3x3dscha3666-qag8108 PDF