DG13 Search Results

DG13-34

Abstract: 0B4 DC-DC
Contextual Info: 2SK1327 y, 2SK1327 § LIE D 4 4 ^ 2 0 5 DG13340 3SS IHIT4 HITACHI/(OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING tí 2.4 C7J c-j L-jJ _a • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown

2SK511

Abstract: 296 mos fet ED44
Contextual Info: bl E D 44<ìb2DS DG13073 OST « H I T 4 2SK511 H I T A C H I / OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING HIGH FREQUENCY POWER AMPLIFIER i n • FEATURES • Superior High Frequency Characteristics. • Low Input and Output Capacitance.

D0130

Abstract: j120 2Sk416
Contextual Info: blE D 2 S K 4 1 e • y , 44Tb205 DG13n b 4 04b I 2 S K 4 1 6 HIT4 § H ITA C H I/{O P TO E LE C TR O N IC SILICON N-CHANNELMOS FET I 4 o HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER £>Tyr* T yp e Complementary pair with 2S J120 ■ FEATURES

DG13-2

Abstract: MINIWATT DB13-2
Contextual Info: MINIWATT-DARIO DB 13-2 DG13-2 DR13-2 TUBES ÉLECTROSTATIQUES DE 13 cm A POST-ACCÉLÉRATION, POUR OSCILLOGRAPHIE A ve c post-accéiération : CULO T CHAUFFAG E 6,3 V DiheptaJ 14 broches 0,3 A C A P A C IT E S G rille I . 8 5 7 8 9 PF PF

DG133

Abstract: DG134 DG134A DG134B
Contextual Info: - 297 DG133, 134, 141 spst jfe t ~ r± a ? y^ - n tju o o # ) Or S ilic o n ix <V * = 12V, V~ = —18V, v> = o v , 7V O F F 7 -f V U — - > 3 > - R l. (D G 134) DG134B DG134A i: ¿d ft S E q u iv a le n t " O F F " C ir c u it NALCMj \ , 3.5o* ih ^ 10 m A

DG130-5

Abstract: DG130
Contextual Info: A DEGSON P ro d u ct S p e c ific a tio n DEGSON ELECTRONICS CO., LTD. Material M3 steel Zinc plated Brass, Tin plated PA66. UL94V-0 Screws : Pin header: Housing : Electrical DG130-5.0 DG130-7.5 DG130-5.08 DG130-7.62 NX5-08 Rated voltage Rated current Contact resistance

Contextual Info: A DEGSON a t & ä t , 3 - * f£ ^ DEGSON ELECTRONICS CO., LTD. Sa Mi «•m a % it M3. ÍR. tÊ ÎÎ f f M îl PA66. UL94V-0 41 M £ f i­ li # %n m 300V 24A 20m ß 5000M ß /DC1OOOV AC2000V/1 Min 24-12AWG 2.5mm2 s ä fe s S tó p p a Wife i l « s DG130B-5.0

2SK553

Abstract: DIODE T25 4 Jo 2SK552 J5111 H12B Hitachi Scans-001
Contextual Info: 2SK552,2SK553— blE D • 44^505 DG13DÖ3 TTfl iH i m HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • L ow O n -R e s is ta n c e . • H ig h S p e e d S w itc h in g . • L o w D riv e C u r r e n t. •

D8741

Abstract: BGY41B BGY41A BGY40A BGY40B BGY41 p8748 IEC134 D8746 PHILIPS RF 1980
Contextual Info: N AMER PHILIPS/DISCRETE I 8 6D 01014 ObE D bb531 31 V T - w - ò q - o r _ DG13SS5 BGY40A BGY41A J BGY40B BGY41B U.H.F. POWER AMPLIFIER MODULES A range of broadband u.h.f. modules, primarily designed for mobile communication equipment, operating directly from 12 V electrical systems.

DG139AP

Abstract: DG139 DG139BP Qualcomm chipset MSM8255 DG142 DG142AP DG142BP DG145 75X2
Contextual Info: f T DG139/142/145 Dual DPDT JFET Analog Swiches FEATURES BENEFITS APPLICATIONS • • • < 1 >j.W S ta n d b y P o w e r M in im iz e s S ta n d b y B ip o la r D riv e rs • C o n s ta n t r o s ( O N ) O v e r S ig n a l R a n g e • • • B e tte r R a d ia tio n T o le ra n c e

2SK1327

Abstract: dc-dc converter hitachi
Contextual Info: 2SK1327 y, 2SK1327 § LIE D 4 4 ^ 2 0 5 DG13340 3SS IHIT4 HI TA CHI/(O PTOE LECTRONI CS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING tí 2.4 C7J c-j L-jJ _a • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown

Contextual Info: GEC P L E SS EY S E MI CO ND S 43E ] • 37bôS22 DG13h3Q & B i PL SB GEC P LESS EY S E M I C O N D U C T O R S~] SP8720 300MHz 3/4 The SP8720 is an ECL counter with ECU 10K com patible outputs. It divides by 3 when either control input is in the high state and by 4 when both inputs are low or open circuit). An

PA66 GF 25

Abstract: pa66 fr 20-2AWG UL-600V DG137T-15
Contextual Info: Product Specification in the course of appl icatio n DG137T-15.0 In the course of APPROVAL Electrical Standard Rated voltage Rated current Wire range Withstanding voltage UL 600V 90A 20-2AWG Menchanical Torque Ambient temperature Strip length Dimensions pitch

DG13

Contextual Info: A ¡a . « te . * -3 DEGSON ELECTRONICS CO., LTD. DEGSON C€ UM PC, UL94V-2 Wils], 1,2 M UxIÎl ÍR, M4 M#: È1ÉÌ: I 300V/30A -40°C~+80°C AC2000V /1 Min 1000M Q / DC500V 18-10AWG 1.2N.m 10.6Lb.in iÆÆffeJÏ/fiLSÎL: m m tK : DG13 11x P-1 +23 IT I I í

Contextual Info: . DG134 designed for S S ilic a n ix BENEFITS • Sw itching H igh Frequencies ■ Sw itching in S a te llite Applications • DG126 2-Channel Drivers w ith SPST and DPST FET Sw itches Higher Signal Bandwidth Switching Capa­ bilities o O F F Is o la tio n > 6 0 dB @ 1 M H z

CDG1 30

Abstract: W25V DG133A DG133B jfet 133
Contextual Info: DG133, 134, 141 SPST J F E T T tP 'ÿ ' • X-í -yf ra7Jl (o d f) S ilic o n ix

Qualcomm chipset MSM8255

Contextual Info: S Siliconix DG144 BENEFITS • Sw itching H ig h Frequencies • ■ Sw itching in S a te llite Applications DG139 Drivers with Normally Open & Normally Closed FET Switches designed fo r. . Higher Signal Bandwidth Switching Capa­ bilities o O F F Is o la tio n > 6 0 d B @ 1 M H z

DG139

Abstract: H313 DG143 DG144 DG145 DG146 DG161 DG162 VP75
Contextual Info: Intersil High-Rellabillty Products DG139, DG142 - DG146, DG161-DG164 High Reliability DUAL JFET Analog Switch GENERAL DESCRIPTION FEATURES Each package contains a monolithic driver with differen­ tial input and 2 or 4 discrete FET switches. The driver may

DG161-DG164

Abstract: DG143 DG139 analog DG139 DG142 DG144 DG145 DG146 DG161 VV-36
Contextual Info: Intersil High-Rellabillty Products DG139, DG142 - DG146, DG161-DG164 High Reliability DUAL JFET Analog Switch GENERAL DESCRIPTION FEATURES Each package contains a monolithic driver with differen­ tial input and 2 or 4 discrete FET switches. The driver may

DG13-32

Contextual Info: page 1 2 3 4 5 6 7 DG13-32 sheet 1 1 2 2 3 3 FP date 1957.03.03 1959.04.04 1957.03.03 1959.04.04 1957.03.03 1959.04.04 2000.09.24

2sk682

Abstract: k682 2SK683
Contextual Info: blE D 44*ib2[]S DG13121 h31 IHIT4 2SK682,2SK683 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES r • Low On-Resistance • • High Speed Switching Low Drive Current • • No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter

2SK430

Contextual Info: blE D MMIbSQS DG1307D 3HJ IHIT4 2SK430 Q,2SK430(S HITACHI/(OPTOELECTRONICS) SILICON N-CHANNEL MOS FET (F F <C>Type Type HIGH SPEED POWER SW ITCHING HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Lo w O n -R esistan ce. • H igh S peed S w itc h in g .

2SK554

Abstract: 2SK555 SA-2A diode DG130 ah7a
Contextual Info: 4M=lb2ÜS DG130Ö7 b43 blE T> 2SK554,2SK555 I H I T 1! HITACHI/COPTOELECTRONICS S ILIC O N N-CHAIMNEL M O S FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance. • High Speed S w itch in g . • Low Drive C urrent. • No Secondary Breakdown.

Contextual Info: f T DG133/134/141 Dual SPST JFET Analog Swiches FEATURES BENEFITS APPLICATIONS • Low Standby Power < 1 p.W • Minimizes Standby Power Requirement • Portable and Battery Powered Systems • Bipolar Drivers • Better Radiation Tolerance • Constant rQS(ON)