DEVICE MARKING T7 Search Results
DEVICE MARKING T7 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TPD2015FN | Toshiba Electronic Devices & Storage Corporation | Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30 | Datasheet | ||
| TPD2017FN | Toshiba Electronic Devices & Storage Corporation | Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30 | Datasheet | ||
| TPD4206F | Toshiba Electronic Devices & Storage Corporation | Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=500 V / Iout=2.5 A / SSOP30 | Datasheet | ||
| TPD4204F | Toshiba Electronic Devices & Storage Corporation | Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2.5 A / SSOP30 | Datasheet | ||
| TPD4165K | Toshiba Electronic Devices & Storage Corporation | Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=3 A / HDIP30 | Datasheet |
DEVICE MARKING T7 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm |
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ot-23bsr15bsr16c-120 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 Pin configuration 1 = BASE 2 = EMITTER |
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ot-23bsr15bsr16c-120+2 | |
marking t8 sot-23
Abstract: T8 SOT23 BSR15 BSR16
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ot-23bsr15bsr16c-120+4 | |
BSR15
Abstract: BSR16
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ot-23bsr15bsr16c-120 | |
scr control circuit for welding
Abstract: POW-R-BRIK SCR 131-6 SCR 2000 powerex R9G0 2100 scr welding 2200300 scr 209 3000 watt inverter SCR RECTIFIER
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amperes/400-30009003dh0803dh1003dh+13 | |
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Contextual Info: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking |
OCR Scan |
900mhzq62702-f1492ot-323as35bd5 | |
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Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking |
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ot-23bsr15bsr16c-120 | |
BFR90Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration |
OCR Scan |
q62702-f560flb35b05bfr90 | |
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Contextual Info: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code |
OCR Scan |
bfp183wq62702-f1503ot-343fie35bq5+3 | |
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Contextual Info: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm |
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512mbmt42l32m16d109005aef8467caf2 | |
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Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package |
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512mbmt42l32m16d1mt42l32m32d2121-ball+2 | |
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Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package |
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512mbmt42l32m16d1mt42l32m32d2121-ball+2 | |
C167-LM
Abstract: SAB-C167-LM C166 C167 SAF-C167-LM CC31IR
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sab-c167-lmsaf-c167-lmc167-lm144-pin+4 | |
marking AF
Abstract: C166 C167 C167CR SAH-C167CW-L16M c167cw-l16
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sah-c167cw-l16mc167cw-l16m144-pinp-mqfp-144-1+5 | |
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MT42L16M32
Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
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512mbmt42l32m16d1mt42l16m32d109005aef8467caf2+8 | |
MT42L16M32D1
Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
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512mbmt42l32m16d1mt42l16m32d109005aef8467caf2+4 | |
PAN1322-SPPContextual Info: August 2013 ENW89841A3KF Bluetooth QD ID:B021246 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1322-SPP Intel’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.3 Edition 2013-08-14 Published by Panasonic Industrial Devices Europe GmbH |
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enw89841a3kfb021246216qebmupan1322-spp+2 | |
PAN1321-SPP
Abstract: Pan1321 PAN1311 ENW89811K4CF T8753-2 B014433 t8753 marking code maxim label PLL Synthesizer Modules, panasonic Infineon Specific HCI Commands bluetooth
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enw89811k4cfb014433216qebmupan1321-spp+8 | |
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Contextual Info: January 2011 ENW89810K5CF Bluetooth QD ID:B014433 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1311-SPP In f i n e o n’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.1 November 2011 ENW89811xxxF |
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enw89810k5cfb014433216qebmupan1311-spp+3 | |
Q-SPT7H0327620C5GL
Abstract: SB203 4329A SSPT7 DC100V marking code for resonators SEIKO method of the lot number
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q-spt7h0327620c5gl768khzsb2034329a+4 | |
SSP-T7-F
Abstract: Q-SPT7 Q-SPT7H032762070BJ SSPT7 DC100V MATERIAL INSPECTION QUALITY QUANTITY medical ultrasonic crystal SSPT7F outgoing inspection SSP-T7
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q-spt7h032762070bj768khzssp-t7-fq-spt7+7 | |
T73127
Abstract: 4 MHz Oscillator
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t73127100ppm30ppm50ppm+3 | |
T73LVP22
Abstract: T73LVP22S1 T73LVP22S1X
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t73lvp22350ps750mvmdst-0014-00+3 | |
T73LVP12Contextual Info: Preliminary Information T73LVP12 3.3V LVTTL/LVCMOS-to-Differential LVPECL Translator with Output Enable Applications • LVPECL clock source General Description The TLSI T73LVP12 is a general-purpose LVTTL/LVCMOS-to-differential LVPECL translator operating |
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t73lvp12350pst73lvp12-s08t73lvp12-s08-tnr+3 | |