DESIGNING WITH SHARP FLASH MEMORY Search Results

70NS120

Abstract: flash memory 5v 16m LH28F016SA DESIGNING WITH SHARP FLASH MEMORY 28F016SV 56TSOP E28F008SA LH28F016SU LH28F0800SU AMD flash ETOX
Contextual Info: Flash Memory Application Note DESIGNING WITH SHARP FLASH MEMORY Vijay Desai, Field Applications Engineer INTRODUCTION SHARP offers various high-density, highest performTM ance Flash File memory components as a part of non-volatile memory family. The first generation Flash

LH28F160SU

Abstract: LH28F160BJ LH28F320BJ LH28F800BG 1S1588 2SJ168 74HC14
Contextual Info: Flash Memory Application Note Data Protection for SHARP’s Flash Memories INTRODUCTION This application note describes general methods for protecting Flash Memory data and includes some specific tips for Boot Block and Symmetrical Block Flash Memories. It includes using physical and software methods to prevent apparent malfunctions in Flash Memory

8 bit memory ic

Abstract: flash memory IC-032 SRAM LCD PANEL 32"
Contextual Info: NEW PRODUCT INFORMATION LR-S1366/67 32 M Flash Memory + 8 M SRAM Stacked CSP Combination Memory LR-S1368/69 32 M Flash Memory + 12 M SRAM Stacked CSP Combination Memory Outline Under Development LR-S1366/67 and LR-S1368/69 are combination memories that realize great capacity on single chips using Sharp’s

Contextual Info: LH28F020SU-N FEATURES 2M 256K x 8 Flash Memory 3 2 -P IN T S O P • 256K x 8 Bit Configuration r a • 16 Independently Lockable Blocks (16K) • 100,000 Erase Cycles per Block 2 Ag Z 3 ,3 C Al 7 Z 6 □ CË 29 □ d q 28 □ DQ6 27 □ d q 5 7 26 □ d q

sharp CMOS Camera Module

Abstract: SHARP camera CIF LZ0P39 ic 039 cmos camera cmos camera module cmos digital camera module cmos digital camera sensor sharp Cmos Image Sensor IC-039
Contextual Info: NEW PRODUCT INFORMATION LZ0P3908 LZ0P390E 0.6 cc CMOS camera module with built-in DSP and lens Under development Outline LZ0P3908 / LZ0P390E are CMOS camera modules with built-in DSPs and lenses, realizing the industry’s smallest volume 0.6 cc , thinnest design (5 mm thick), and lowest power consumption (45 mW). Their high sensitivity enables photography even in

NC80

Contextual Info: LH28F004SU-NC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP TOP VIEW • 512K x 8 Word Configuration • 5 V Write/Erase Operation (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase 1» 40 39 □ gnd 38 NC 37 NC 34 ZI DQ6 • 80 ns Maximum Access Time

Contextual Info: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration • 5 V Write/Erase Operation (5 V Vpp; 3.3 V V qq) - No Requirement for DC/DC Converter to Write/Erase • 120 ns Maximum Access Time (Vcc = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability

Contextual Info: LH28F004SU-Z9 FEATURES 4M 512 x 8 Flash Memory 42-PIN CSP TOP VIEW • 512K x 8 Word Configuration • 2.7 V Write/Erase Operation (5 V ± 0.5 V Vpp, 3.0 V ± 0.3 V V CC, CC’ +15°C to +35°C) - No Requirement For DC/DC Converter To Write/Erase / 1 2 3

Contextual Info: LH28F040SUTD-Z4 FEATURES • 512K x 4M 512K x 8 Flash Memory 40-PIN TSOP TOP VIEW 8 Bit Configuration N • 5 V Write/Erase Operation (5VVpp, 3.3 Vcc) - Vcc for Write/Erase at as low as 2.9 V • Min. 2.7 V Read Capability - 190 ns Maximum Access Time (VCC = 2.7V)

LC124

Contextual Info: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration TOP VIEW S • 5 V Write/Erase Operation (5 VN/pp, 3.3 V Vc c ) - No Requirement for DC/DC Converter to Write/Erase A-I6 C 1• \ 40 Z I a 17 A-I5 C 2 39 □ A14 IZ

Contextual Info: LH28F400SU-NC FEATURES 4M 512K x 8, 256K x 16 Flash Memory 56-PIN TSOP • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 60 ns Maximum Access Time (Vcc = 5.0 V ±0.25 V)

26F004SU

Contextual Info: LH28F400SU-LC FEATURES 4M 512K x 8 ,256K x 16 Flash Memory 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation (5 V Vpp, 3.3 V Vcc) - No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time

Contextual Info: 16M 1M FEATURES x 16, 2M x 8 Flash Memory 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation -s 3/5 C 1« 56 □ WP CË, Z 2 55 □ WE • 70 ns Maximum Access Time NCZ 3 54 □ ÔË • 0.32 MB/sec Write Transfer Rate A20 z 4 53 □ RY/BY

a13c

Abstract: F0006
Contextual Info: 8M 512K x 1 6 ,1M x 8 Flash Memory FEATURES 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 5 V Write/Erase Operations (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 70 ns Maximum Access Time

28F800

Abstract: BSR15 LH28F008SA LH28F016SA LH28F016SU LH28F800SU
Contextual Info: 8M 512K x 1 6 ,1M x 8 Flash Memory FEATURES 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 5 V Write/Erase Operations (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 70 ns Maximum Access Time

A10C

Abstract: A12C A15C A17C LH28F008SA LH28F016SU
Contextual Info: 16M 1M x 1 6 ,2M x 8 Flash Memory 56-PIN TSOP TO P VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 70 ns Maximum Access Time • 0.32 MB/sec Write Transfer Rate • 100,000 Erase Cycles per Block • 32 Independently Lockable Blocks

32-PIN

Abstract: LH28F008SA LH28F020SU-N TSOP032-P-0820 28F020SUN80-20
Contextual Info: LH28F020SU-N FEATURES • 256K x 8 Bit Configuration • 5 V Write/Erase Operation 5 V VPP – No Requirement for DC/DC Converter to Write Erase • • • • 2M (256K × 8) Flash Memory 32-PIN TSOP TOP VIEW A11 1 32 A9 2 31 A10 A8 3 30 CE OE A13 4 29

Contextual Info: 16M 1M FEATURES 16, 2M x 8 Flash Memory 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 70 ns Maximum Access Time • 0.43 MB/sec Write Transfer Rate • 100,000 Erase Cycles per Block • 32 Independently Lockable Blocks (64K)

38LM MARKING

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVE-BTL90 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16V09) Spec No.: EL10Y075A Issue Date: September 7, 1999 SHARB= LHFl6V09 l Handle this document carefully for it contains material protected by international copyright law.

LH28F800BGHB-TTL90

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BGHB-TTL90 Flash Memory 8M 512K x 16 (Model No.: LHF80BZA) Spec No.: EL10Z134B Issue Date: Sept. 19, 2001 sharp LHF80BZA ●Handle this document carefully for it contains material protected by international copyright law.

SHARP 20 WZ 51

Contextual Info: SHARP SPEC No. ISSUE: MF M2 - J 1 0 4 0 2 Apr. 15. 1998 To; Preliminary S P E CI F I CAT I ONS 16M xl6 Flash Memory + 2M(x8) SRAM Product Type L RS 1 ( Model No. 3 11 LR S 1 3 1 1 ) *This specifications contains 48 pages including the cover and appendix.

Contextual Info: SHARP I SPEC No. ISSUE: 1 MFM2-J10307 May. 18. 1998 To; Preliminary S P E C I F I C A T I O N S Product Type 8M x 16 Flash Memory + 1M(x 16) SRAM LR S1314 ( Mcxiel No. LR S1314 ) _ _ ♦This specifications contains 50 pages including the cover and appendix.

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVE-BTL90 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16V09) Spec No.: EL10Y075A Issue Date: September 7, 1999 SHARB= LHFl6V09 l Handle this document carefully for it contains material protected by international copyright law.

BA 6688 L

Abstract: 32ag LH28F016S
Contextual Info: 16M 1M x 1 6 ,2M x 8 Flash Memory FEATURES 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation •\ 1« 56 □ WP C Ë iC 2 55 □ WE • 70 ns Maximum Access Time NCC 3 54 □ ÔË • 0.32 MB/sec Write Transfer Rate a 2o IZ 4 53 □ RY/BY A-ig IZ