LH28F004SU Search Results

LC124

Contextual Info: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration TOP VIEW S • 5 V Write/Erase Operation (5 VN/pp, 3.3 V Vc c ) - No Requirement for DC/DC Converter to Write/Erase A-I6 C 1• \ 40 Z I a 17 A-I5 C 2 39 □ A14 IZ

Contextual Info: LH28F004SU-Z9 FEATURES 4M 512 x 8 Flash Memory 42-PIN CSP TOP VIEW • 512K x 8 Word Configuration • 2.7 V Write/Erase Operation (5 V ± 0.5 V Vpp, 3.0 V ± 0.3 V V CC, CC’ +15°C to +35°C) - No Requirement For DC/DC Converter To Write/Erase / 1 2 3

Contextual Info: FLASH MEMORY LH28F004SUT-NC80 / SHARP CORPORATION LHF04S62 • H a n d le this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.

NC80

Abstract: LH28F004SU-NC LH28F008SA 0C000
Contextual Info: LH28F004SU-NC FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP 40-PIN TSOP TOP VIEW A16 1 40 A17 A15 2 39 GND A14 3 38 NC A13 4 37 NC 80 ns Maximum Access Time A12 5 36 A10 32 Independently Lockable Blocks (16K) A11 6 35 DQ7

LH28F004SU-LC

Abstract: LH28F008SA 40TSOP
Contextual Info: LH28F004SU-LC FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP, 3.3 V VCC – No Requirement for DC/DC Converter to Write/Erase • 120 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability – 160 ns Maximum Access Time

CSR application

Abstract: CSR-4 Transistor z1 LH28F004SU-Z1 LH28F008SA CSR34
Contextual Info: LH28F004SU-Z1 FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP 40-PIN TSOP TOP VIEW A16 1 40 A17 A15 2 39 GND A14 3 38 NC A13 4 37 NC 100 ns Maximum Access Time A12 5 36 A10 32 Independently Lockable Blocks (16K) A11 6 35 DQ7

Contextual Info: MEMORIES Flash Memories_I ★ Under development C apacity C onfiguration Model No. Supply voltage A c c e s s tim e n s (Vcc/Vpp) 5V Single 2M 60 70 BO 85 100 1 2 0 150 -0 ★LH28F020SU-N x8 3.3/5V ★LH28F020SU-L LH28F004SU-N ★

42-PIN

Abstract: LH28F004SU LH28F004SU-Z9
Contextual Info: LH28F004SU-Z9 FEATURES • 512K x 8 Word Configuration • 2.7 V Write/Erase Operation 5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C – No Requirement For DC/DC Converter To Write/Erase • 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) 4M (512 × 8) Flash Memory

DESIGNING WITH SHARP FLASH MEMORY

Contextual Info: LH28F004SU-Z1 FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration • 5 V Write/Erase Operation (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase TOP VIEW S’ A -I6 IZ -1• 2 j I / / "N 40 □ A i 7 / 39 □ g n d

Contextual Info: V e r . 1.0 SHARP Limited useage of LH28F004SU/ LH28F400SU In the case of 8bit configuration Programmingproblem at command and data We observed som e operation error w hen you write commandand data in following timing. • Same timming of CES High and WE s High

4S29

Contextual Info: SHARP ìL _ u !y /n v A H Y July 1996 - FLASH MEMORY LH28F004SUB- Z9 \ SHARP CORPORATION LHF04SZ9

NC80

Contextual Info: LH28F004SU-NC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP TOP VIEW • 512K x 8 Word Configuration • 5 V Write/Erase Operation (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase 1» 40 39 □ gnd 38 NC 37 NC 34 ZI DQ6 • 80 ns Maximum Access Time

Contextual Info: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration • 5 V Write/Erase Operation (5 V Vpp; 3.3 V V qq) - No Requirement for DC/DC Converter to Write/Erase • 120 ns Maximum Access Time (Vcc = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Contextual Info: MEMORIES ★ Under developm ent lal-Power-Supply Flash Mem ories Capacity 8M 16M Configuration Erase Mock size wordsxbits (bytes) 1M 2M 1M X 8 16 X Access time (ns) MAX. Supply voltage LH28F008SAT/R/N-85 85 Vcc = 5 V LH28F008SAT/R/N-12 120 Vpp = 12 V ★LH28F008SAT/R/B-KF85

56-PIN

Abstract: LH28F400SU-NC NC6016
Contextual Info: LH28F400SU-NC FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V VPP – No Requirement for DC/DC Converter to Write/Erase • 60 ns Maximum Access Time (VCC = 5.0 V ± 0.25 V) • 80ns Maximum Access Time (VCC = 5.0 V ± 0.5 V)

CSR application

Abstract: 56-PIN LH28F400SU-LC 48-pin TSOP 28F400
Contextual Info: LH28F400SU-LC FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V VPP, 3.3 V VCC – No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) • Minimum 2.7 V Read Capability

26F004SU

Contextual Info: LH28F400SU-LC FEATURES 4M 512K x 8 ,256K x 16 Flash Memory 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation (5 V Vpp, 3.3 V Vcc) - No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time

Device-List

Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
Contextual Info: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera

Contextual Info: MEMORES ★ U n d e r d e v e lo p m e n t 5 V Single-Pow er-Supply Flash Mem ories Capacity 2M Configuration Erase block *. 1- • size HOfdSXDItS {bytes} 256k x 8 16k 5 12 k x 8 Model No. Access time (nsi MAX. ★LH28F020SUT/N-N60 60 V cc = 5 V * LH28F020SUT/N-N80

Contextual Info: MEMORIES ★ Under development Supply voltage r a n a r it u L.dpacixy Operating temp. Configuration Erase block Wordsxbits size (bytes) Model No. Access time(ns) -—- 1 8M 1M x 8 64k LH28F008SAH - 40 to 85 5 V/12 V-Dualpower-supply - 25 to 8 5 - >★LH28F008SAH-KF

NEC D2732D

Abstract: nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25
Contextual Info: Dataman-48 Version 4.30 <ALL> Device List ALi M6759 www.dataman.com M6759 *44 M6759 *44Q M8720 AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera EP1210 EP220 EP312 EP330 EP900 EP910-T EPC1064 EPC1213 EPC1441 as 1213 EPM3064A *44 EPM5192 @84 EPM7032AEas7032 *44

Contextual Info: LH28F400SU-NC FEATURES 4M 512K x 8, 256K x 16 Flash Memory 56-PIN TSOP • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 60 ns Maximum Access Time (Vcc = 5.0 V ±0.25 V)

39SF020A

Abstract: 39vf800a F29C31400T MX10FLCDPC w78e65p 39VF010 MX29F1601 49lf002a 93C26 M27C401CZ
Contextual Info: Labtool-148C Version 3.30 <ALL> Device List ACTRANS AC29LV400B *44PS AC29LV400B *48TS ALi M6759 *44 M8720 Page 1 of 13 AC29LV400T *44PS AC29LV400T *48TS Alliance AS29F040 AS29LV400T *48TS AS29LV800T *48TS AS29LV400B *44PS AS29LV800B *44PS AS29LV400B *48TS