LH28F008SAH Search Results

13B1

Abstract: LH28F008SAHT-85
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SAHT-85 Flash Memory 8M 1M x 8 (Model No.: LHF08S51) Spec No.: EL103202A Issue Date: August 27, 1998 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

80386SL

Abstract: 82360sl LH28F008SA LH28F008SAHT-T9
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F008SAHT-T9 Flash Memory 8Mbit 1Mbitx8 (Model Number: LHF08ST9) Lead-free (Pb-free) Spec. Issue Date: October 5, 2004 Spec No: EL16X022 LHF08ST9 ●Handle this document carefully for it contains material protected by international

Contextual Info: SHARP February 1997 FLASH MEMORY LH28F008SAHR-85 Ver. 2.0E SHARP CORPORATION Engineering Department 2 Flash Memory Development Center Tenri Integrated Circuits 1C Group I L HF 0 8 S 1 6 1 CONTENTS 1 FEATURES 2 2 PRODUCT OVERVIEW 3 3 PRINCIPLES OF OPERATION

LH28F008SAHT-85

Abstract: 13B1
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SAHT-85 Flash Memory 8M 1Mb x 8 (Model No.: LHF08S51) Spec No.: EL103202A Issue Date: August 27, 1998 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

80386SL microprocessor features

Abstract: 82360SL 80386sl intel 80386SL AH 36
Contextual Info: I LHF 0 8 S 1 6 LH28F008SAHR-85 8 MBIT 1 MBIT x 8 FLASH MEMORY 1. FEATURES •High-Density Symmetrically Blocked Architec­ ture - Sixteen 64 KByte Blocks • Very High-Performance Read - 85 ns Maximum Access Time • SRAM-Compatible Write Interface •Extended Cycling Capability

LH28F008SAHR-85

Abstract: flash
Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F008SAHR-85 8M 1M x 8 Flash Memory

Contextual Info: MEMORIES ★ Under development Supply voltage r a n a r it u L.dpacixy Operating temp. Configuration Erase block Wordsxbits size (bytes) Model No. Access time(ns) -—- 1 8M 1M x 8 64k LH28F008SAH - 40 to 85 5 V/12 V-Dualpower-supply - 25 to 8 5 - >★LH28F008SAH-KF

lh28f800bvhe-tv85

Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
Contextual Info: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 5V LH28F008SAHT-85 8M Cobra x8 3 V, 5 V or 12 V

LH28F640BFHE-PBTLDY

Abstract: lh28f320s5hns-zp LH28F160S5T-L70A LH28F016 LH28F008SAT-ZW lh5116na-10 LH28F640BFHE-PBTL90 LH5164A-10L LH5164AN-80L lh5116-10
Contextual Info: Product Change Notice PCN : Lead (Pb)–free Packages October 15, 2004 This document updates PCN: ST-03-Z-06E issued January 23, 2004. Objective: Existing Memory ICs are changing from a lead (Pb) process to a lead-free process. Process Change Key Points 1) SHARP is changing the lead plating process from lead (Pb) to lead-free to meet the demands

Contextual Info: 8M 1M x 8 Flash Memory • High-Density Symmetrically Blocked Architecture - Sixteen 64K Blocks • Extended Cycling Capability - 100,000 Block Erase Cycles - 1.6 Million Block Erase Cycles per Chip • Automated Byte Write and Block Erase - Command User Interface

LQ070T5BG01

Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Contextual Info: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66

Contextual Info: MEMORIES ★ Under developm ent lal-Power-Supply Flash Mem ories Capacity 8M 16M Configuration Erase Mock size wordsxbits (bytes) 1M 2M 1M X 8 16 X Access time (ns) MAX. Supply voltage LH28F008SAT/R/N-85 85 Vcc = 5 V LH28F008SAT/R/N-12 120 Vpp = 12 V ★LH28F008SAT/R/B-KF85

IR3Y29B

Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Contextual Info: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX

Contextual Info: MEMORIES Flash Memories_I ★ Under development C apacity C onfiguration Model No. Supply voltage A c c e s s tim e n s (Vcc/Vpp) 5V Single 2M 60 70 BO 85 100 1 2 0 150 -0 ★LH28F020SU-N x8 3.3/5V ★LH28F020SU-L LH28F004SU-N ★

IR2E27A

Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Contextual Info: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080

56TSOP

Abstract: LH28F020SUT LH28F032SUTD-10 LH28F016SAT
Contextual Info: MEMORIES • Flash Memories Capacity Configuration Erasable block size bytes (words x bits) Model No. Accees time (ns) MAX. Supply voltage (V) ★LH28F020SUT/N-N60 60 Vcc=5 ★LH28F020SUT/N-N80 80 Vpp=5 Read current (mA)MAX. Operating temperature (1C) Package

Contextual Info: MEMORIES \ Flash Memories • Symmetrical Block Sm artVoltage Flash Memories S up p ly vo lta g e C a p a c ity Bit configuration sE efbyte“ i ^words / O p erating tem p. M odel No. Vcc A c c e ss tim e V fC ) R e m a rks (ns) 70 85 90 100 120 150170

55B0

Contextual Info: 8M 1M X 8 Flash Memory • High-Density Symmetrically Blocked Architecture - Sixteen 64K Blocks • Extended Cycling Capability - 100,000 Block Erase Cycles - 1.6 Million Block Erase Cycles per Chip • Automated Byte Write and Block Erase - Command User Interface

LH28F128SPHTD-PTL12

Abstract: 56TSOP lh28f800bvhe-tv85 lh5116h10 LH28F320SKTD-L70 LRS1826A TV85 LH28F008SC LH28F160S5T-L70A LH52256CHN-70LL
Contextual Info: Memory Product Selector Guide 8M AND 16M SYMMETRICAL FLASH DENSITY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 x8 85 I 120 C 85 C 85 I 85 C 120 C 12 V LH28F008SCN-L85