LH28F016SUH Search Results

LH28F016SUHT-10

Abstract: 1MX16
Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F016SUHT-10 16M 1M x 16/2M x 8

Contextual Info: SHARP February 1997 FLASH MEMORY LH28F016SUHT-10 V e r. L O E SHARP CORPORATION Engineering Department 2 Flash Memory Development Center Tenrì Integrated Circuits 1C Group I LHF 1 6 S 1 5 # Handle this document carefully for it contains material protected by international

IR3Y29B

Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Contextual Info: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX

Contextual Info: MEMORES ★ U n d e r d e v e lo p m e n t 5 V Single-Pow er-Supply Flash Mem ories Capacity 2M Configuration Erase block *. 1- • size HOfdSXDItS {bytes} 256k x 8 16k 5 12 k x 8 Model No. Access time (nsi MAX. ★LH28F020SUT/N-N60 60 V cc = 5 V * LH28F020SUT/N-N80

Contextual Info: MEMORIES ★ Under development Supply voltage r a n a r it u L.dpacixy Operating temp. Configuration Erase block Wordsxbits size (bytes) Model No. Access time(ns) -—- 1 8M 1M x 8 64k LH28F008SAH - 40 to 85 5 V/12 V-Dualpower-supply - 25 to 8 5 - >★LH28F008SAH-KF

Contextual Info: MEMORIES Flash Memories_I ★ Under development C apacity C onfiguration Model No. Supply voltage A c c e s s tim e n s (Vcc/Vpp) 5V Single 2M 60 70 BO 85 100 1 2 0 150 -0 ★LH28F020SU-N x8 3.3/5V ★LH28F020SU-L LH28F004SU-N ★

IR2E27A

Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Contextual Info: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080

56TSOP

Abstract: LH28F020SUT LH28F032SUTD-10 LH28F016SAT
Contextual Info: MEMORIES • Flash Memories Capacity Configuration Erasable block size bytes (words x bits) Model No. Accees time (ns) MAX. Supply voltage (V) ★LH28F020SUT/N-N60 60 Vcc=5 ★LH28F020SUT/N-N80 80 Vpp=5 Read current (mA)MAX. Operating temperature (1C) Package

Contextual Info: MEMORIES \ Flash Memories • Symmetrical Block Sm artVoltage Flash Memories S up p ly vo lta g e C a p a c ity Bit configuration sE efbyte“ i ^words / O p erating tem p. M odel No. Vcc A c c e ss tim e V fC ) R e m a rks (ns) 70 85 90 100 120 150170

Contextual Info: SHARP SPEC No. E L 0 9 9 1 7 0 I S S U E : September. 18 1997 To ; S P E C I F I CAT I ONS Product Type 32M F l a s h F i l e Memory LH28F032 SUHTD-7 0 Mode l No. L H F 3 2 S Z 1 j&This sp ecification s contains 44 pages including the cover and appendix.