LH28F016 Search Results

56-PIN

Abstract: LH28F008SA LH28F016SA
Contextual Info: LH28F016SA FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 3/5 1 56 CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.43 MB/sec Write Transfer Rate

9373

Abstract: EDI7F4342MC LH28F016SU
Contextual Info: EDI7F4342MC 4x2Megx32 Features 4x2Megx32 Flash Module • 4 x 2 Meg x 32 • Based on Sharp's LH28F016SU Flash Device • Fast Read Access Time - 80ns • 5- Volt-Only Reprogramming • Low Power Dissipation • 60mA per Device Active Current • 10µA per Device CMOS Standby Current

Contextual Info: ^EDI EDI7F4342MC • ELECTRONIC DESIGNS, INC. Features 4x2Megx32 4x2Megx32 Flash Module • 4 x 2 Meg x 32 The EDI7F4342MC is organized as four banks of 2 Meg x • Based on Sharp's LH28F016SU Flash Device 32. The module is based on Sharp's LH28F016SU - 2Megx8

28F008SA

Abstract: LH28F016SCR-L95
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F016SCR-L95 Flash Memory 16M 2MB x 8 (Model No.: LHF16C18) Spec No.: EL104171 Issue Date: September 30, 1998 sharp LHF16C18 ●Handle this document carefully for it contains material protected by international

EDI7F4342MC

Abstract: LH28F016SU a1458
Contextual Info: White Electronic Designs EDI7F4342MC 4x2Mx32 FLASH MODULE DESCRIPTION FEATURES n 4x2Mx32 n Based on Sharp's LH28F016SU Flash Device n Fast Read Access Time - 80ns n 5V Only Reprogramming n Low Power Dissipation n 60mA per Device Active Current n 10µA per Device CMOS Standby Current

EDI7F4342MC

Abstract: LH28F016SU
Contextual Info: White Electronic Designs EDI7F4342MC 4x2Mx32 FLASH MODULE DESCRIPTION FEATURES „ 4x2Mx32 „ Based on Sharp's LH28F016SU Flash Device „ Fast Read Access Time - 80ns „ 5V Only Reprogramming „ The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8

LH28F016SUHT-10

Abstract: 1MX16
Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F016SUHT-10 16M 1M x 16/2M x 8

9373

Abstract: EDI7F4342MC LH28F016SU
Contextual Info: ^EDI EDI7F4342MC m ELECTRONIC DESIGNS. INC. • Features 4x2Megx32 4x2Megx32 Flash Module ■ 4 x 2 Meg x 32 ■Based on Sharp's LH28F016SU Flash Device ■Fast Read Access Time - 80ns ■5- Volt-Only Reprogramming ■Low Power Dissipation The EDI7F4342MC is organized as four banks of 2 Meg x

LH28F160S3

Abstract: Flash Application Note lh28f160s5 sharp lh28F160S5 sharp page buffer
Contextual Info: LH28F160S3/S5 16M Flash Memory Flash Application Note Migration from LH28F016SA/SU to LH28F160S3/S5 Phil Lin, Flash Applications Engineer INTRODUCTION To convert the LH28F016SA/SU to a LH28F160S3/ S5, some hardware and software changes are necessary and precautions must be taken. This is an overview of the main differences between the the

13B1

Abstract: LH28F016SCT-Z4
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F016SCT-Z4 Flash Memory 16M 2MB x 8 (Model No.: LHF16CZ4 Spec No.: EL10Y094 Issue Date: November 24, 1998 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

LH28F016SCT-L90

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F016SCT-L90 Flash Memory 16M 2MB x 8 (Model No.: LHF16CZ7) Spec No.: EL112031A Issue Date: April 8, 1999 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited Warranty

EDI7F4342MC

Abstract: LH28F016SU
Contextual Info: EDI7F4342MC 4x2Mx32 FLASH MODULE FEATURES DESCRIPTION n 4x2Mx32 The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. n Based on Sharp's LH28F016SU Flash Device

Contextual Info: SHARP J a n .1998 FLASH MEMORYÌ LH28F016SANS-70 Ver.1.1 V_ J SHARP CORPORATION Flash Memory Engineering Department 2 Memory Engineering Center Tenri Integrated C irc u its Development 1C Group SHARP L HF 1 6 S Z B 1 LH28F016SANS-70 16 Mbit (1 Mbit x 16, 2 Mbit x 8)

tsop tray matrix outline

Abstract: TSOP56 package tray 16T MARKING AFL MARKING T40 16 ultrasonic LH28F008SA LH28F016SUT-10 UT-10 6sr5
Contextual Info: 1 SHARP LHF16S11 LH28F016SUT-10 16 Mbit 1 Mbit x 16, 2 Mbit x 8 5V Single Voltage Flash Memory CONTENTS PAGE FEATURES. 2 CONTENTS PAGE 4.0 BUS OPERATIONS, COMMANDS 1.0 INTRO DUC TIO N. 3

28F008SA

Abstract: LH28F016SCT-ZR
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH28F016SCT-ZR Flash Memory 16Mbit 2Mbitx8 (Model Number: LHF16CZR) Spec. Issue Date: October 14, 2004 Spec No: EL16X101 LHF16CZR ●Handle this document carefully for it contains material protected by international

LH28F016SU

Contextual Info: EDI7F4344MC 4x4Megx 32 4x4Megx32 Flash Module Block Diagrams The EDI7F4344MC is organized as a 4 x 4Meg x 32 module which is based on Sharps LH28F016SU 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. A0-A20 G\ W0\ W1\ W2\ W3\

28F008SA

Abstract: LH28F016SCN-L12
Contextual Info: Date 16M x8 Flash Memory LH28F016SCN-L12 Jun. 11. 1998 LHF16C10 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.

44-PIN

Abstract: A10E LH28F016SCH-L LH28F016SC-L TSOP040-P-1020
Contextual Info: SHARP LH28F016SC-L/SCH-L LH28F016SC-L/SCH-L 16 M-bit 2 MB x 8 SmartVoltage Flash Memories DESCRIPTION • Enhanced automated suspend options - Byte write suspend to read - Block erase suspend to byte write - Block erase suspend to read • Enhanced data protection features

iu08

Contextual Info: 16M 1M x 16/2M x 8 Flash Memory FEATURES DESCRIPTION • User-Selectable 3.3 V or 5 V Vcc SHARP’S LH28F016SA16M Flash Memory is a revo­ lutionary architecture which enables the design of truly mobile, high-performance, personal computing and communication products. With innovative capabilities,

Contextual Info: SHARP LHF16S10 ! r~ LH28F016SUR-70 16 Mbit 1 Mbit x 16, 2 Mbit x 8 5V Single Voltage Flash Memory CONTENTS PAGE CONTENTS PAGE 1.0 INTRODUCTION. 3 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS. 10

LH28F016SCT

Contextual Info: FLASH NNON VOLATILE ETOX SMART VOLTAGE LH28F016SCT 16M Reliability Test Report

imax6

Contextual Info: SHARP PRODUCT PREVIEW LH28F016SCH-L 16-MBIT 2 MB x 8 SmartVoltage Flash MEMORY Sm artVoltage Technology — 2.7V(Read-Only), 3.3V or 5V V cc — 3.3V, 5V or 12V Vpp • SRAM-Com patible W rite Interface ■ High-Density Sym m etrically-Blocked Architecture

LH28F016SANS-70

Contextual Info: Flash Memory, 16 Mbit, 56 SSOP, Flashfile, Symmetrically Block, LH28F016SANS-70

56-PIN

Abstract: LH28F008SA LH28F016SU
Contextual Info: LH28F016SU FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation 3/5 1 56 WP CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.32 MB/sec Write Transfer Rate A20 4 53 RY/BY A19