DESIGN Search Results

A1619A

Abstract: b1241
Contextual Info: SN54ABT32318, SN74ABT32318 18-BIT TRI-PORT UNIVERSAL BUS EXCHANGERS SCBS180A-JUNE 1 9 9 2 - REVISED JULY 1994 Members of the Texas Instruments Wldebus+ Family State-of-the-Art EPIC-IlB™ BICMOS Design Significantly Reduces Power Dissipation Typical V q l p Output Ground Bounce

LF400

Contextual Info: TA8430AF- PRELIMINARY DATA STEPPING MOTOR DRIVER Unit in m m TA8430AF is 2 Phase Bipolar Stepping Motor Driver IC 16 designed especially for low operating voltage use j FDD and other portable equipments. 1 3.0 ±0.2 3.4 ± 0 4 r^ f 9 UUULjS M M . 2 Phase Bipolar Stepping Motor Driver

Contextual Info: RN4604 RN4604 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT U n it in mm A N D DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in SM6 (Super Mini Type w ith 6 leads) • W ith B uilt-in Bias Resistors • Sim plify C ircuit Design • Reduce a Q uantity of P arts and M anufacturing Process

IGBT loss calculate

Contextual Info: n j] DN-57 b U N IT R O D E Design Note Power Dissipation Considerations for the UC3726N/UC3727N IGBT Driver Pair by Mickey McClure Application Engineer Motion Control Products Optimized or driving Insulated Gate Bipolar Transis­ tors (IGBTs , the UC3726N/UC3727N IGBT driver

Fdd spindle motor ncl

Abstract: pll motor control
Contextual Info: TC9203P/F PLL MOTOR CONTROL FOR FDD TC9203P/F are C 2MOS LSI designed for controlling the motor of especially for Disk Spindle Drive FDD . 8-bit D/A converter system has been employed for each of the speed control system (AFC) and the phase control system (APC) and realize a wide reduction of

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

11419

Abstract: DN-12 114-19022
Contextual Info: DD NDT D D I M E N S I O N S IN THIRD ETRI mm ANGLE PREIJECTID N F NOTES; ' B" R E F CONNECTOR IS FDR REQUIREMENTS CABLE DESIGNED FDR FLAT SEE RIBBON APPLICATION I N D I C A T I O N OF F I R S T C A B L E P O S I T I O N CO N TA CT P O S I T I O N B L A C K IN K MARKS

Contextual Info: SN74BCT29854 8-BIT TO 9-BIT PARITY BUS TRANSCEIVER S C B S 257- SEPTEMBER 1987 - REVISED NOVEMBER 1993 DW OR NT PACKAGE • BICMOS Process With TTL Inputs and Outputs T O P V IE W • State-of-the-Art BICMOS Design Significantly Reduces Standby Current

7408, 7404, 7486, 7432

Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
Contextual Info: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers

Contextual Info: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst

Q193

Abstract: lj11
Contextual Info: PRODUCT PREVIEW SN54AS29821, SN54AS29822, SN74AS29821, SN74AS29822 10-BIT BUS INTERFACE FLIP FLOPS WITH 3 STATE OUTPUTS D 2 8 2 5 , MAY 1986 Designed to be Interchangeable w ith A M D A M 2 9 8 2 1 and A M 2 9 8 2 2 SN 54A S29821 . . . JT PACKAGE SN 74A S29821 . . . DW OR NT PACKAGE

FN521

Abstract: FN 521 UFN522 UFN523 UFN520
Contextual Info: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

1d4 cb

Contextual Info: SN54ABT16373A, SN74ABT16373A 16-BIT TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS S CB S160 - DE CE M B E R 1992 Members of the Texas Instruments Widebus Family SN54ABT16373A . . . WD PACKAGE SN74ABT16373A . . . DGG OR DL PACKAGE TOP VIEW State-of-the-Art EPIC-llB™ BiCMOS Design

2N3051

Abstract: 2N3050 2N2412 2n3049
Contextual Info: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors

ues704

Contextual Info: RECTIFIERS UES704 UES705 UES706 UES704HR UES705HR UES706HR High Efficiency, 20A FEATU RES DESCRIPTIO N • • • • • • The UES704 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz.

260-pin

Contextual Info: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

Contextual Info: TOSHIBA TA8210AH/AL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8210AH, TA8210AL 20W BTLX2CH AUDIO POWER AMPLIFIER The thermal resistance dj-T of TA8210AH, TA8210AL package designed for low thermal resistance, has a high efficiency of heat radiation.

texas instruments tip34

Abstract: texas instruments tip33 TIP33C
Contextual Info: TYPES TIP33, TIP33A, TIP33B. TIP33C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS X O H m c< tj r FO R POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGN ED FOR COM PLEM ENTARY USE WITH TIP34, TIP34A, TIP34B, TIP34C • 80 W at 25° C Case Temperature

Contextual Info: TC74LVQ573F/FW/FS OCTAL D-TYPE LATCH WITH 3-STATE OUTPUT The TC74LVQ573 is a high speed CMOS OCTAL LATCH w ith 3-STATE OUTPUT fabricated w ith silicon gate and double-layer metal w iring C2MOS technology. Designed fo r use in 3.3 Volt systems, it achieves high

ta7798

Abstract: TA7798P 1S152 TA7728P
Contextual Info: TOSHIBA TA7798P TENTATIVE N T S C -P A L E N C O D E R F O R T E L E T E X T , V ID E O T E X , A N D M IC R O C O M P U T E R S TA7798P is an IC designed to compose composite video signals of either NTSC or PAL type from analog RGB input signals as well as from inputs

Contextual Info: TC74LCX16373AFT LOW-VOLTAGE 16-BIT D-TYPE LATCH WITH 5V TOLERANT INPUTS A N D OUTPUTS T h e TC74LCX16373AFT is a high p erform an ce C M O S 16bit D-TVPE LATCH. Designed fo r use in 3.3 V o lt systems, it achieves high speed o p e ra tio n w h ile m ain tain in g the

Contextual Info: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this

PM 8228 ic

Abstract: ds1n intel 8228
Contextual Info: TTL LSI TYPES SN74S428 TIM8228 , SN74S438(TIM8238) CONTROLLER AND BUS DRIVER FOR 8080A SYSTEM S B U L L E T I N N O . D L -S 7 6 1 2 4 6 6 , O C T O B E R 1 9 7 6 • N PA C KA G E Designed to Be Interchangeable with Intel 8228 and 8238 (TOP VIEW ) MOMÌCTKMAL DATA PORTS