DEPL Search Results

Contextual Info: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131A - JULY 1996 Charge Pump Provides Negative Gate Bias for Depletion-Mode GaAs Power Amplifiers GATE_BIAS □ = 10 VCC C1c i+ BATTJN BATTJN BATTJN PGP PG GND 2 3 4 5 6 7 8 9 10 135-mli High-Side Switch Controls Supply

Contextual Info: Depluggable Terminal Strips for Panel / Chassis Mounting TYPE 302-STB -DS 8 mm spacing - 1 to 12 poles 302-STB (-DS) Dimensions: mm (in.) Length of Connector (L) L = No. of Poles x Center to Center Spacing - 2 mm When locating connector, allow 0.5 mm clearance

DN2450

Abstract: Voltage to Current Converters marking L2 package SOT A0208
Contextual Info: Supertex inc. DN2450 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

ARM9 400mhz

Abstract: usb modem hsdpa CDPS-25 arm9 pinout usb base data acquisition card NAND FLASH 64MB MT100EOCG
Contextual Info: MultiConnect OCG-E Benefits Open Communications Gateways Embedded • Linux-based open source software • Proven hardware for the development and deployment of custom applications • Cost-effective alternative to custom manufacturing • Comprehensive service and developer

marvell ethernet switch mii

Abstract: marvell ethernet switch marvell layer 3 ethernet switch marvell IEEE GMII magnetics "Ethernet Transceiver" Gigabit Ethernet PHY TBI Marvell 88E1000 marvell ethernet
Contextual Info: 88E1000 Gigabit Ethernet Transceiver Marvell Accelerates Deployment of Gigabit Ethernet to the Desktop Gigabit Ethernet Performance The Marvell Alaska Gigabit Ethernet over copper transceiver, the 88E1000, advances Marvell’s leadership in providing high-performance, costeffective solutions for demanding

IGBT THEORY AND APPLICATIONS 400V

Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
Contextual Info: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page

TBD CABLE

Abstract: taclane redcom Cisco 3725 lan rj45 color code diagram EIA-470B CA9079 RS-232 trackball db25m pinout DB50 connector
Contextual Info: TDC Theater Deployable Communications Baseline Requirements Document Initial Communications Element - Voice/NIPRNET Module v2 Nov 2003 ESC/NI4T 5 Eglin Street Hanscom AFB, MA 01731 Approved for public release; distribution is unlimited. FA8726-04-R-0002

d2020e

Contextual Info: SILICONIX INC 18E I Ô5S473S 0014053 fy S iG c o n ix JLm in c o rp o ra te d ND2020 SERIES "T-2.7-7. S N-Channel Depletion-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER 1 • V BR)DSV fDS(ON) (V) (« ) Id (A)

video recorder on usb

Abstract: sdram pcb layout gerber z1510 sdram pcb gerber usb video capture video 4KX16
Contextual Info: USB Audio/Video PC Recorder Reference Design GENERAL DESCRIPTION The USB Capture Board Reference Design is based on Zapex’s proven top quality MPEG Video and Audio encoding technology. Using Zapex's new Z1510 MPEG-1 Audio/Video real time encoder, OEMs can rapidly develop and deploy a

photodiode encoder

Contextual Info: E-NET Module Connects your application in record time The eZ80 Webserver-i E-NET Module is a compact, high-performance Ethernet module. It is designed for development and deployment in embedded systems requiring control and connectivity. Its small size, 63.5mm x 63.5mm x 25.4mm, and

DN2620

Contextual Info: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology

Gigabit

Abstract: 1000base-sx marvell ethernet switch marvell fiber Marvell fibre copper 1000base high speed line driver gigabit media converter advantages of 1000base-sx marvell IEEE marvell phy
Contextual Info: 88E1000S Gigabit Ethernet Transceiver Marvell Accelerates Deployment of Gigabit Ethernet to the Desktop Gigabit Ethernet Performance Offering all the features of the Alaska family of Gigabit Ethernet over copper transceivers, the Alaska+ PHY, the 88E1000S, adds an integrated 1.25 GHz

01N100D

Abstract: high voltage mosfet n-channel
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C

nd2410l

Contextual Info: ND2406L, ND2410L N-Channel Depletion-Mode MOS Transistors JBÜSKSS TO-92 TO-226AA PRODUCT SUMMARY T PART NUMBER V (BR)DSS ND2406L 240 6 0.23 ND2410L 240 10 0.18 BOTTOM VIEW >d (A) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VDDV24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

pj 809

Contextual Info: Product Nomenclature and Ordering Information DMOS Proprietary Products RB HI-REL RB = MIL-STD-883 for Arrays SX = Similar to JANTX SXV = Similar to JANTXV FAMILY TYPE D = Vertical DepletionMode DMOS Discretes L = Lateral DMOS Discretes T = Low Threshold DMOS

Contextual Info: Temic BF543 S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diode •

S525T

Contextual Info: Temic S525T S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ “ Applications High frequency stages up to 300 MHz Features • integrated gate protection diode

GI 536 DIODES

Contextual Info: Temic S888T S e m i c o n d u c t o r s N-Channel Dual-Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixer stages in low voltage UHF- and VHFtuner with only 5 V supply voltage and in cordless phones.

ND2406B

Abstract: nd2406
Contextual Info: SILICÔNIX INC 1ÖE D 025 4735 0 0 1 4 0 5 5 2 I ND2406 SERIES 'S ifi_ fX'SH >c a n »c JLB in il c o rp o ra te d T -2 n -7 ,5 N-Channel Depletlon-M ode MOS Transistors BOTTOM VIEW TO-92 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER V BR DSV fDS(ON)

ND2410L

Contextual Info: Ä1«ssslä VDDV SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDV1CHP* VDDV2CHP* ND2406L ND2410L ‘ Meets or exceeds specification for all part numbers listed below G ate Pad 0-005 0.127 0 007 (0.178) M* «4 p*« tl» c i U :R *«fl:»iag f u t a _f« * « a « B * S

Contextual Info: Temic BF995 S e m i c o n d u c t o r s N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.

gl 1117 ax

Abstract: BF994
Contextual Info: Tem ic BF994S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions for handling. M Applications Input and m ixer stages especially for V H F TV-tuners. Features • Integrated gate protection diodes

N-Channel Depletion-Mode MOSFET high voltage

Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
Contextual Info: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.

sst2100

Abstract: LPD-12
Contextual Info: SILICONIX INC IflE D • 0254735 ODIMGOI 1 ■ SD/SST2100 SERIES C T ’S ilic o n ix J J f in c o rp o ra te d N-Channel Depletion-M ode Lateral DMOS FETs - T The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high