DENSIT Search Results

Contextual Info: SN 54A LS1640A , S N 7 4 A L S 1640A, SN 54 A LS1 645 A , S N 74 A LS 1 645 A OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS D 2 6 6 1 , D E C E M B E R 1 9 8 2 - R E V IS E D M A Y 1 9 8 6 Bidirectinal Bus Transceivers in High-Density 20-Pin Packages SN 54A LS' . . . J PACKAGE

54HC299

Abstract: texas instruments UFN 450
Contextual Info: SN 54H C 299, SN74H C299 8 BIT UNIVERSAL SHIFTfSTORAGE REGISTERS W ITH DIRECT CLEAR AND 3-STATE OUTPUTS D 2684. DECEMBER 1982-REVISED SEPTEMBER 1987 Multiplexed I/O Ports Provide Improved Bit Density S N 5 4 H C 2 9 9 . . . J P AC K A G E S N 7 4 H C 2 9 9 . . . D W OR N P AC KA G E

SN54382

Abstract: SN74F382
Contextual Info: SN54382, SN74F3B2 ARITHMETIC LOGIC/FUNCTION GENERATORS □ 2 9 3 2 , M A R C H 1 9 8 7 -R E V IS E D JA N U A R Y 1989 SN 54F382 . . J PACKAGE SN 74F382 . . DW OR N PACKAG E Ideally Suited for Hlgh-Density Economical Processors ITO P VIEW : 1 B1 C 2 AOC 3

Contextual Info: TYPES SN54ALS323, SN54AS323 SN74ALS323, SN74AS323 8 BIT UNIVERSAL SHIFTfSTORAGE REGISTERS WITH 3 STATE OUTPUTS D 2 6 6 1 . DECEMBER 1 9 8 2 -R E V IS E D DECEMBER 1 9 8 3 Multiplexed I/O Ports Provides Improved Bit Density SN 54A LS ’, S N 54A S ' . . J PACKAGE

TC514256

Contextual Info: 524,288 W O RD S x 40 BIT D Y N A M IC RAM M O D U LE DESCRIPTION The THM405120ASG/BSG is a 524,288 words by 40 bits dynamic RAM m odule which assem bled 20 pcs o f TC514256AJ/BJ on the printed circuit board. The THM405120ASG/BSG is optim ized for application to the system s which are required high density

MARKING PA TR SOT-23

Abstract: ultra low igss pA
Contextual Info: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

rneg2

Contextual Info: QT1F-Plus Device Quad T1 Framer-Plus TXC-03103C DESCRIPTION • D4 SF, ESF including HDLC Link support , and transparent framing modes • Encodes/decodes AMI/B8ZS and forced ones density line codes • Fractional T1 gapped clock • Monitor function for frame pulse, clock and data

Contextual Info: SN54HC393, SN74HC393 DUAL 4-BIT BINARY COUNTERS SCLS143B – DECEMBER 1982 – REVISED MAY 1997 D D D D Dual 4-Bit Binary Counters With Individual Clocks Direct Clear for Each 4-Bit Counter Can Significantly Improve System Densities by Reducing Counter Package

Contextual Info: TEMx28 Device 21/28 Channel Dual Bus High Density Mapper TXC-04222 PRODUCT INFORMATION DESCRIPTION The TEMx28 device is designed for add/drop multiplexer, terminal multiplexer, and dual and single unidirectional ring applications. Up to 28 E1, DS1, or VT/TU payloads are

mosfet 0835

Abstract: TSM05N03
Contextual Info: TSM05N03 Preliminary 30V N-Channel MOSFET SOT-223 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 30 Features ID (A) 60 @ VGS =10V 5 90 @ VGS =4.5V 3.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

DIODE MARKING B82

Abstract: CMZB100 CMZB330 CMZB75
Contextual Info: CMZB68~CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation 0.65 ± 0.2 Unit: mm • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small

Contextual Info: SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High-Speed Switching Applications Optimum for high-density mounting in small packages Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10

Contextual Info: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

TSM10N06

Contextual Info: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

gs2b

Abstract: PLC4H-S25-L PLT3S-C702
Contextual Info: A. System Overview PHYSICAL INFRASTRUCTURE SYSTEMS B. Copper Systems Pan-Ty Cable Ties – HALAR▲ – Distinctive Maroon Color C. Fiber Optic Systems • UL Listed for use in plenum or air handling spaces per NEC, Section 300-22 C and (D) • Low smoke density and excellent

Contextual Info: MA3008K10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3008K is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs

Contextual Info: 184PIN DDR333 Unbuffered DIMM 1024MB With 64Mx8 CL2.5 TS128MLD64V3J Description Placement The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

Contextual Info: MA3018M60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3018M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3010J10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3010J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

12350

Abstract: PS-12350 24 volt 300 AH
Contextual Info: Rechargeable Sealed Lead-Acid Battery PS-12350 12 Volt 35 Amp. Hrs. Features: Absorbent Glass Mat AGM technology for superior performance. Valve regulated, spill-proof construction. Power/volume ration yielding unrivaled energy density. Recessed fold-down handles for safe and

ZD-01674

Contextual Info: ZY8160 60A DC-DC Intelligent POL 8V to 14V Input • 0.5V to 2.75V Output Data Sheet Member of the Applications • Low voltage, high density systems with Intermediate Bus Architectures IBA • Point-of-load regulators for high performance DSP, FPGA, ASIC, and microprocessors

oeg relay 6vdc

Abstract: 3-1461491-6 3-1461491-3 PCN-112D3MHZ PCN-124D3MHZ
Contextual Info: General Purpose Relays PCB Relays OEG Slimline PCB Relay PCN n 1 pole 3 A, 1 form A NO contact 5mm wide n 3A switching current, load range 1mA up to 5A n Sensitive coil 120mW n Allows high function-/packing density n Cadmium-free contacts n Z type with reinforced insulation

Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC