DDR32133 Search Results

k4b2g1646q

Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Contextual Info: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

IS46TR

Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        

Contextual Info: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility

NT5CB256

Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800

MT41K256M8DA

Abstract: MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K
Contextual Info: Preliminary‡ 2Gb: x4, x8, x16 Automotive DDR3 SDRAM Features Automotive DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 banks MT41J256M8 – 32 Meg x 8 x 8 banks MT41J128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • •

K4B4G0846C

Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Contextual Info: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B2G0846D

Abstract: K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D K4B2G0446D-HCH9
Contextual Info: Rev. 1.1, Sep. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

MT9JSF25672AZ-2G1

Abstract: micron ddr3 2133 MT4J128M8
Contextual Info: 1GB, 2GB x72, ECC, SR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT9JSF12872AZ – 1GB MT9JSF25672AZ – 2GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C D1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, unbuffered dual in-line memory module

hynix ddr3

Abstract: ddr3 2133 DDR3-2133 DDR3-1333 DDR3-1866 780max
Contextual Info: DDR3 Device Operation DDR3 SDRAM Device Operation 1 DDR3 Device Operation Contents 1. Functional Description 1.1 Simplified State Diagram 1.2 Basic Functionality 1.3 RESET and Initialization Procedure 1.3.1 Power-up Initialization Sequence 1.3.2 Reset Initialization with Stable Power

Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

Contextual Info: ‘H’ Part number Last Updated: May. 2012 H 5 T Q XX X X X X X - XX X 1 2 3 4 56 7 8 9 10 11 12 13 14 HYNI X MEMORY OPERATI NG TEMPERATURE & POWER CONSUMPTI ON PRODUCT FAMI LY 5 : DRAM C : Commercial Temp1 & Normal Power L : Commercial Temp1) & Low Power

Contextual Info: 4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ4G43AFR-xxC H5TQ4G83AFR-xxC H5TQ4G63AFR-xxC * SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 / Apr. 2013 1 Revision History Revision No. History

h5tq2g63bfr

Contextual Info: 2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ2G83BFR-xxC H5TQ2G83BFR-xxI H5TQ2G83BFR-xxL H5TQ2G83BFR-xxJ H5TQ2G63BFR-xxC H5TQ2G63BFR-xxI H5TQ2G63BFR-xxL H5TQ2G63BFR-xxJ * Hynix Semiconductor reserves the right to change products or specifications without notice.

M471B5173

Contextual Info: Rev. 1.0, Apr. 2012 M471B5173CB0 M471B1G73CB0 204pin Unbuffered SODIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: Rev. 1.01, Mar. 2012 K4B2G0446E K4B2G0846E 2Gb E-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •

Contextual Info: 1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G63DFR-xxC H5TQ1G63DFR-xxI *Hynix Semiconductor reserves the right to change products or specifications without notice Rev. 1.5 /Dec. 2010 1 Revision History

H5TQ1G63DFR

Abstract: H5TQ1G83DFR
Contextual Info: 1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G83DFR-xxL H5TQ1G83DFR-xxJ H5TQ1G63DFR-xxC H5TQ1G63DFR-xxI H5TQ1G63DFR-xxL H5TQ1G63DFR-xxJ *Hynix Semiconductor reserves the right to change products or specifications without notice

512mb 96 ball

Abstract: H5TQ1G63DFR A1073 h5tq1g83 H5TQ1G63DF
Contextual Info: 1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G63DFR-xxC H5TQ1G63DFR-xxI *Hynix Semiconductor reserves the right to change products or specifications without notice Rev. 1.3 /Dec. 2010 1 Revision History

NT5CB256M16bP-DI

Abstract: NT5CB256M16 NT5CC512M8BN NT5CB512M8BN-CGI NT5CB512M8BN-DI NT5CB256M16BP-DII NT5CB256M16B T14C NT5CC512M8 NT5CC256M16BP
Contextual Info: NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP Speed Bins -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Units tCK Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Clock Frequency

NT5CB64M16DP

Abstract: nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m
Contextual Info: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EI* -FK* DDR3/L-1066-CL7 (DDR3/L-1333-CL8) (DDR3/L-1600-CL10) (DDR3-1866-CL11) (DDR3-2133-CL13) Units

NT5CC256

Abstract: NT5CB256M16 512M8CN NT5CC256M16
Contextual Info: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility

Contextual Info: 2Gb DDR3 L SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 2133 2,3  TDQS and /TDQS pair for X8  DDR3 - 1866